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P-type nitrogen-doped gallium oxide film and preparation method thereof

A technology for thin film preparation and nitrogen doping, which can be used in final product manufacturing, sustainable manufacturing/processing, semiconductor/solid-state device manufacturing, etc. , the effect of high repetition rate and high doping rate

Active Publication Date: 2020-06-26
SHENZHEN INST OF WIDE BANDGAP SEMICON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Deep ultraviolet photodetectors based on n-type gallium oxide thin films are facing the problem of low responsivity
The performance of field effect transistors based on p-type gallium oxide thin films has always been blind

Method used

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  • P-type nitrogen-doped gallium oxide film and preparation method thereof
  • P-type nitrogen-doped gallium oxide film and preparation method thereof
  • P-type nitrogen-doped gallium oxide film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0065] Embodiment 1: This embodiment provides a p-type gallium oxide thin film and its growth method

[0066] Such as figure 2 Shown, for preparing P-type nitrogen-doped gallium oxide film preparation method, comprises the following steps:

[0067] (1) Place a gallium nitride film in the cavity to form a specific oxygen content in the cavity

[0068] Such as figure 1 Shown is a schematic diagram of a gallium nitride film. After the gallium nitride film including the substrate is placed in the chamber of the chemical vapor deposition equipment, the pressure in the chamber of the chemical vapor deposition equipment is kept stable at 1.01×10 3 Pa, and continuously feed argon with a flow rate of 700 sccm for 120 minutes, so that the cavity reaches 1.0×10 -15 the hypoxic environment.

[0069] (2) High temperature growth of gallium oxide thin film

[0070] up to 1.0×10 -15 After the low-oxygen environment, the argon flow rate was reduced to 200 sccm, and the chamber pressure ...

Embodiment 2

[0078] Embodiment 2: This embodiment provides a preparation method of a top-gate transistor based on p-type gallium oxide

[0079] Such as Figure 8 Shown is a schematic diagram of a transistor, the transistor structure includes a p-type nitrogen-doped gallium oxide thin film structure, source electrodes and drain electrodes located at both ends of the gallium oxide thin film structure, a first insulating layer located in the center of the gallium oxide thin film structure, A gate electrode on the first insulating layer, a second insulating layer on the source electrode, the drain electrode, the gate electrode and the p-type nitrogen-doped gallium oxide structure.

[0080] The preparation method of the top-gate transistor comprises the following steps:

[0081] (1) Place a gallium nitride film in the cavity to form a specific oxygen content in the cavity

[0082] After putting the gallium nitride film containing the substrate into the chamber of the chemical vapor deposition...

example 2

[0094] The Schottky contact existing in the device in Example 2 can be improved into an ohmic contact by improving the metal-semiconductor contact through electrode material selection, material interface treatment before electrode deposition, etc.

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Abstract

The invention discloses a p-type nitrogen-doped gallium oxide film and a preparation method thereof. Through thermal oxidation growth, tahe p-type gallium oxide film grows from the upper surface of agallium nitride film to the lower surface of the gallium nitride film in a diffusion mode, and the carrier concentration of the prepared p-type gallium oxide film is 1.0 * 10 <11> / cm <3>-1.0 * 10 <20> / cm < 3 >, the surface roughness of the film is 1 nm-100 nm, and the resistivity of the film is smaller than or equal to 100 ohm.cm. The invention provides the method which is simple in process and can repeatedly and stably prepare the p-type gallium oxide film; the prepared p-type gallium oxide film is high in nitrogen doping content, high in carrier concentration, high in mobility and low in resistivity; the quality of the p-type gallium oxide material is improved, and the industrialization process of the gallium oxide material is promoted.

Description

technical field [0001] The invention belongs to the technical field of semiconductor materials, and in particular relates to a p-type nitrogen-doped gallium oxide thin film and a preparation method thereof. Background technique [0002] After years of development of power semiconductor devices based on silicon materials, the performance of the devices has approached the theoretical limit of silicon materials. With the increasing demand for power conversion circuits and systems, power semiconductor devices are currently entering silicon carbide, gallium nitride, The third-generation wide bandgap semiconductor era represented by zinc oxide, diamond, aluminum nitride and gallium oxide. Among them, monoclinic β-gallium oxide is an ultra-wide bandgap semiconductor with a bandgap of 4.7-4.9eV, and is an optional material for preparing high-performance deep ultraviolet solar-blind photodetectors. At present, the growth of high-quality gallium oxide materials and the preparation of...

Claims

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Application Information

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IPC IPC(8): H01L29/24H01L21/02H01L29/786H01L21/34H01L31/032H01L31/108H01L31/18
CPCH01L29/24H01L21/02565H01L21/02614H01L29/7869H01L29/66969H01L31/0321H01L31/1085H01L31/18Y02P70/50
Inventor 方志来蒋卓汛闫春辉吴征远张国旗
Owner SHENZHEN INST OF WIDE BANDGAP SEMICON
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