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Flexible all-carbon resistive random access memory and preparation method thereof

A resistive memory and flexible technology, applied in electrical components and other directions, can solve the problems of limiting the development and application of memory devices, and difficult to meet the needs of large data storage, and achieve the effects of good cycle stability, stable cycle scanning, and low misread rate.

Pending Publication Date: 2020-06-26
NANJING UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The traditional silicon-based CMOS process cannot meet the requirements of flexibility. At the same time, the traditional charge-trapping-based floating-gate flash memory is limited by charge tunneling and other reasons, and its size has approached the physical limit. In terms of operating voltage, power consumption, integration process, Reliability, circuit design, etc. are facing physical and technical bottlenecks, and it is difficult to meet the needs of large data storage, which greatly limits the development and application of storage devices

Method used

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  • Flexible all-carbon resistive random access memory and preparation method thereof
  • Flexible all-carbon resistive random access memory and preparation method thereof
  • Flexible all-carbon resistive random access memory and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0051] Such as figure 1 As shown, the structure of a flexible all-carbon nonvolatile memory is a sandwich structure, which has an upper electrode, a lower electrode and a middle active layer. The memory adopts rGO as the upper and lower electrodes, the middle resistive switching functional layer is a polymer semiconductor material, and the middle active layer is formed on the surface of the lower electrode by spin coating.

[0052] (1) Substrate treatment: Sonicate the silicon dioxide / silicon wafer substrate with ethanol, isopropanol, and deionized water for 10 minutes, blow dry with nitrogen, and then treat it with an oxygen plasma cleaner at a power of 50W for 3 minutes.

[0053] (2) Flexible substrate treatment: Ultrasonic the ethylene glycol diformate plastic with ethanol, isopropanol, and deionized water for 10 min, respectively, and blow dry with nitrogen.

[0054](3) Preparation of lower electrode: Spin-coat graphene oxide solution on silicon dioxide / silicon wafer subs...

Embodiment 2

[0059] A method for preparing a flexible all-carbon nonvolatile memory, comprising the following steps:

[0060] (1) Substrate treatment: Sonicate the silicon dioxide / silicon wafer substrate with ethanol, isopropanol, and deionized water for 12 minutes, blow dry with nitrogen, and then treat it with an oxygen plasma cleaner at a power of 25W for 5 minutes.

[0061] (2) Flexible substrate treatment: Sonicate the polyethersulfone resin with ethanol, isopropanol, and deionized water for 12 minutes, respectively, and blow dry with nitrogen.

[0062] (3) Preparation of the lower electrode: first spin-coat the graphene oxide solution on the silicon dioxide / silicon wafer substrate to obtain a large-area graphene oxide film, and then mix it under argon / hydrogen gas (volume ratio of 95 / 5) Reducing at a high temperature of 1100° C. for 1.5 hours in an atmosphere to obtain a reduced graphene oxide film. Subsequent exfoliation in NaOH solution yielded self-supporting rGO films. The rGO ...

Embodiment 3

[0067] A method for preparing a flexible all-carbon nonvolatile memory, comprising the following steps:

[0068] (1) Substrate treatment: Sonicate the silicon dioxide / silicon wafer substrate with ethanol, isopropanol, and deionized water for 15 minutes, blow dry with nitrogen, and then treat it with an oxygen plasma cleaner at a power of 10W for 8 minutes.

[0069] (2) Flexible substrate treatment: the polyimide was ultrasonicated for 15 min with ethanol, isopropanol, and deionized water respectively, and dried with nitrogen gas.

[0070] (3) Preparation of the lower electrode: first spin-coat the graphene oxide solution on the silicon dioxide / silicon wafer substrate to obtain a large-area graphene oxide film, and then mix it under argon / hydrogen gas (volume ratio of 95 / 5) Reducing at a high temperature of 1200° C. for 0.5 hour in an atmosphere to obtain a reduced graphene oxide film. Subsequent exfoliation in NaOH solution yielded self-supporting rGO films. Flexible rGO ele...

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Abstract

The invention discloses a flexible all-carbon resistive random access memory and a preparation method thereof, and belongs to the field of flexible wearable electronics and information storage. The memory device includes a flexible substrate; a lower electrode arranged on the flexible substrate; a resistive function layer arranged on the lower electrode; and an upper electrode arranged on the resistive function layer. Specifically, the method comprises the steps of taking a conductive reduced graphene oxide (rGO) film as the lower electrode; forming the middle resistive function layer by spin-coating an organic polymer material on the surface of the lower electrode; and transferring an rGO thin film to the intermediate resistive function layer to be used as the upper electrode. The resistive random access memory device has the characteristics that the full-solution processing preparation is realized, the structure is simple, the layers of the device are all carbon-based materials, areflexible and bendable, are high in switch ratio, low in turn-on voltage and good in stability, etc., and has a wide application prospect in the field of wearable electronic devices.

Description

technical field [0001] The invention belongs to the field of flexible wearable electronics and information storage, and in particular relates to a flexible all-carbon resistive variable memory and a preparation method thereof. Background technique [0002] With the rapid development of information technology, massive amounts of information appear in our lives. How to store and process these massive amounts of information has become a major challenge for the development of storage technology. Use, lower cost and higher environmental protection performance have become the inevitable trend of memory development under the current "big data" background. Currently, the application of organic electronic devices to replace silicon-based electronics has made good progress. For example, an organic light emitting device is realized by using an organic light emitting material. In terms of information storage, organic / carbon-based RRAM realizes flash memory (Flash) memory by using fila...

Claims

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Application Information

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IPC IPC(8): H01L45/00
CPCH10N70/841H10N70/881H10N70/021H10N70/011Y02E10/549
Inventor 刘正东刘举庆黄维
Owner NANJING UNIV OF TECH
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