Silicon-doped graphene, preparation method of silicon-doped graphene and silicon-doped graphene-based chemical resistance type nitric oxide room-temperature sensor

A graphene and silicon doping technology, applied in graphene, inorganic chemistry, scientific instruments, etc., can solve the problem of gas selectivity improvement and achieve the effect of improving doping efficiency

Active Publication Date: 2020-07-10
LANZHOU UNIVERSITY
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  • Abstract
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  • Application Information

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Problems solved by technology

[0004] It can be seen from the above that the prior art generally uses metal oxides, conductive polymers, semiconductor materials, etc. to chemically modify (oxidized) graphene, and utilizes the high conductivity of graphene and the charge interaction of the synergistic components of the gas molecules to be detected. Realize the room temperature detection of the compound on nitrogen oxide and other toxic gas molecules. Although the existing technology has improved the sensing sensitivity of nitrogen oxide gas to a certain extent, the further improvement of its gas selectivity and detection limit is still the result of nitrogen oxide. One of the main technical problems facing the field of object sensor devices

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  • Silicon-doped graphene, preparation method of silicon-doped graphene and silicon-doped graphene-based chemical resistance type nitric oxide room-temperature sensor
  • Silicon-doped graphene, preparation method of silicon-doped graphene and silicon-doped graphene-based chemical resistance type nitric oxide room-temperature sensor
  • Silicon-doped graphene, preparation method of silicon-doped graphene and silicon-doped graphene-based chemical resistance type nitric oxide room-temperature sensor

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preparation example Construction

[0030] The invention provides a kind of preparation method of silicon-doped graphene, comprises the following steps:

[0031] Put the graphene oxide powder and the silane coupling agent into the airtight container after mixing, go through the cycle of "freezing-pumping-inflating", and then seal the airtight container;

[0032]The obtained sealed container is heat-treated to obtain the silicon-doped graphene.

[0033] In the present invention, the graphene oxide powder is preferably prepared by a method comprising the following steps:

[0034] Dispersing the graphene oxide in a solvent and then ultrasonically treating it to obtain a graphene oxide dispersion;

[0035] The graphene oxide dispersion is dried to obtain the graphene oxide powder.

[0036] In the invention, the graphene oxide is dispersed in a solvent and then ultrasonically treated to obtain a graphene oxide dispersion liquid. In the present invention, the solvent is preferably acetone, absolute ethanol, tetrahy...

Embodiment 1

[0062] (1) Preparation of silicon-doped graphene

[0063] ① Weigh 500 mg of graphene oxide, disperse it in 10 g of acetone, and process it ultrasonically for 240 min at room temperature to obtain a graphene oxide dispersion;

[0064] ② Centrifuge the graphene oxide dispersion at 12000 rpm for 30 minutes, remove the solvent to obtain graphene oxide powder, and then dry it at 50°C for 30 minutes;

[0065] ③ Weigh 100mg of the graphene oxide powder and add it to a glass sealed tube with a capacity of 20mL, then add 500mg of silicon tetrachloride, and after "freezing-pumping-inflating", the vacuum degree will reach 10 when pumping after freezing. -2 Pa, so cycled 3 times, and finally filled with nitrogen to keep 10 -2 Pa hot melt sealing;

[0066] ④Put the sealed glass tube filled with reactants into a programmable temperature-controlled tube furnace, raise the temperature to 350°C at a rate of 1°C / min and keep it warm for 300 minutes, then cool down to room temperature naturall...

Embodiment 2

[0074] (1) Preparation of silicon-doped graphene

[0075] ① Weigh 500 mg of graphene oxide, disperse it in 2.5 g of N,N-dimethylformamide, and ultrasonically treat it for 30 minutes at room temperature to obtain a graphene oxide dispersion;

[0076] ②Centrifuge the graphene oxide dispersion at 5000 rpm for 3 minutes, remove the solvent to obtain graphene oxide powder, and then dry it at 150°C for 300 minutes;

[0077] ③ Weigh 500mg of the graphene oxide powder and add it to a glass sealed tube with a capacity of 20mL, then add 50mg of tetraethyl orthosilicate, and after "freezing-pumping-inflating", the vacuum degree will reach 10 when pumping after freezing. -4 Pa, cycle like this for 5 times, and finally fill with argon to keep 1.0atm (1 atmospheric pressure) hot-melt seal;

[0078]④Put the sealed glass tube filled with reactants into a programmable temperature-controlled tube furnace, raise the temperature to 400°C at a rate of 5°C / min and keep it warm for 240min, then coo...

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Abstract

The invention provides silicon-doped graphene, a preparation method of the silicon-doped graphene and a silicon-doped graphene-based chemical resistance type nitric oxide room-temperature sensor, andbelongs to the field of gas sensors. A closed container is used as a reaction container. When a reactant system is put into the closed container at room temperature, quantitative inert gas can be introduced into the closed container according to needs so as to keep different pressure intensities. In the subsequent heat treatment process, easy-to-decompose components in graphene oxide powder and asilane coupling agent are generated in the form of gas and are kept in the closed container tube to generate positive pressure, so that the internal pressure of the closed container is increased to different degrees, and silane coupling agent fragments are promoted to be bonded on a graphene oxide matrix to a greater extent from the perspective of chemical equilibrium.

Description

technical field [0001] The invention relates to the technical field of gas sensors, in particular to a silicon-doped graphene and a preparation method thereof, and a silicon-doped graphene-based chemical resistance nitrogen oxide room temperature sensor. Background technique [0002] With the rapid development of the automobile industry, petrochemical industry and other industries, a large amount of nitrogen oxides, such as NO 2 , NO, etc., causing a wide range of natural phenomena such as acid rain and smog, which strongly stimulate the human respiratory tract and cause great harm to the environment and human life safety. How to effectively monitor the emission concentration of nitrogen oxides has become a hot spot in the field of gas sensing basic and applied research. [0003] There are many sensors for nitrogen oxide gas in the prior art. For example, Chinese patent CN107817287A discloses a sensor for detecting nitrogen oxides based on nano-graphene oxide and its prepa...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/198G01N27/12
CPCC01B2204/20C01B32/198G01N27/125
Inventor 牛芳
Owner LANZHOU UNIVERSITY
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