Preparation method and application method of HF electron gas deep purification material

Abstract

The invention relates to the field of high-purity gas purification, in particular to a preparation method and application method of an HF electronic gas deep purification material. The preparation method produces a metal fluoride-loaded activated carbon material AC / MFx-nH2O. After deeply dehydrating the material by using a carbonyl fluoride / high-purity nitrogen mixed gas flow, the HF electron gasdeep purification material AC / MFx is obtained, the material is provided with fluoride, can form crystal water and hydrated metal fluoride and has high water absorption performance, anhydrous fluorideand activated carbon cannot be corroded by HF, collapse of a framework structure and secondary pollution of reaction products to HF cannot be caused, and the method has the advantages of being high inpurity and extremely low in water content when used for efficiently removing water from HF.

Description

technical field [0001] The invention relates to the field of high-purity gas purification, in particular to a method for preparing and applying an HF electronic gas deep purification material. Background technique [0002] HF electron gas is an important etching and cleaning gas in the manufacture of micro-nano electronics, currently completely dependent on imports; exploring the preparation method of high-purity HF electron gas is of great significance for breaking foreign monopoly. [0003] 201811207404.2 involves a method of using a process device for preparing electronic-grade hydrogen fluoride. It is characterized in that fluorine gas is used to oxidize arsenic impurities in hydrogen fluoride to generate high boiling compound HAsF 6 , MAsF 6 , reusing the high boiler HAsF 6 , MAsF 6 Different from the volatility of HF and other components, multiple equilibrium processes are adopted to separate the mixture of multiple components into pure electronic-grade hydrogen fl...

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Problems solved by technology

[0006] Moisture is one of the deadliest impurities in HF electronic gas, which causes the strong reactivity and corrosion of HF, and causes secondary pollution of HF electronic gas by impurities such as metal ions, reduces the purity and consistency of HF electronic gas, and damages the performance of semiconductor devices and yield rate; the production of advanced micro-nano electronics requires strict control of the moisture content of HF electronic gas to < 1 ppmv; the above inventions and existing patents generally use adsorbents and rectification to remove water, but due to the strong reactivity and corrosiveness of aqueous HF , Oxide adsorption materials such as activated alumina, silica, silicon aluminum oxide molecular sieves, etc. can react with HF, and cannot be used to efficiently remove water from HF. Carbon-based materials such as activated carbon, the adsorption efficiency and capacity of water in HF Limited; and HF is strongly hydrophilic, and HF also has a strong hydrogen bond with water. It is difficult to effectively remove the water in HF to the ppb level by conventional distillation

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