A kind of microbolometer and preparation method thereof

A technology of a microbolometer and a growth method, which is applied in the field of preparing a new type of microbolometer device with high thermal resistance coefficient of amorphous silicon, can solve the problems of poor chemical stability, large thermal conductivity of the device, low electrical conductivity, etc. Improve detection and reading, reduce heat transfer effect

Active Publication Date: 2021-06-15
NANJING UNIV
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Problems solved by technology

CN101774530B discloses a microbolometer and its preparation method. The heat-sensitive material used in the patent and the infrared absorbing layer are carbon nanotube-amorphous silicon composite films, which can effectively improve the low and low conductivity of traditional amorphous silicon thermistor films. The disadvantage of poor chemical stability, while avoiding the negative impact of the traditional doping process on the amorphous silicon film
However, the structure adopted by the above two patents is still the traditional way of laying the entire microbridge directly on the cavity structure with the readout circuit substrate, so that the entire device still has a large thermal conductivity, resulting in the smallest detectable Temperature will also be heavily discounted for excellent detection performance

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  • A kind of microbolometer and preparation method thereof
  • A kind of microbolometer and preparation method thereof
  • A kind of microbolometer and preparation method thereof

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Embodiment Construction

[0031] The present invention will be further explained below in conjunction with the accompanying drawings and specific embodiments.

[0032] Such as Figure 2-3 As shown, this embodiment discloses a microbolometer, which includes a horizontally distributed planar semiconductor crystalline nanowire array 1 and amorphous silicon layered sequentially above the planar semiconductor crystalline nanowire array from bottom to top. Layer 2 and Silicon Nitride Layer 3.

[0033] Both ends of the planar semiconductor crystalline nanowires are provided with metal electrodes. Its metal electrodes can be PT (12nm)-AL (80nm) system, Ti-Au system, Ni and other metal materials, and the metal contact can be improved by rapid thermal annealing process. The evaporation method may use a thermal evaporation system, a magnetron sputtering system, or an electron beam evaporation system.

[0034] Also disclosed in this embodiment is a preparation method for a microbolometer, such as figure 1 As s...

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Abstract

The invention discloses a microbolometer, which comprises a horizontally distributed planar semiconductor crystalline nanowire array and an amorphous silicon layer and a silicon nitride layer stacked sequentially above the planar semiconductor crystalline nanowire array from bottom to top. , the two ends of the planar semiconductor crystalline nanowires are provided with metal electrodes. The present invention changes the structure of the current common microbolometer device, adopts suspended crystalline nanowires as supports, and suspends amorphous silicon (sensitive layer) and silicon nitride (light sensitive layer). Since the surface of suspended crystalline nanowires The limitation of heat conduction enables the detection island to obtain good thermal insulation. At the same time, due to the low resistivity of the nanowire, it can also be used as a conductive channel, which greatly improves the transition from thermal performance to electrical performance of the device.

Description

technical field [0001] The present invention relates to a microbolometer and a preparation method thereof, more specifically to a method for connecting and suspending amorphous silicon nitride laminated films by using a programmable crystalline nanowire array, especially involving the use of suspending Confinement of thermal conduction by the surface of nanowires, and the high thermal resistivity of amorphous silicon for the fabrication of novel microbolometer devices. Background technique [0002] According to its relationship with visible light, infrared spectrum can be divided into near infrared (wavelength range 0.75 μm ~ 2.5 μm), mid infrared (wavelength range 2.5 μm ~ 25 μm) and far infrared (wavelength range 25 μm ~ 300 μm). Infrared spectroscopy has a wide range of applicability to samples. Solid, liquid or gaseous samples can be used, and inorganic, organic and polymer compounds can be detected; It is also widely used in astronomy, meteorology, remote sensing, biol...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B82B1/00B82B3/00G01J5/20B82Y15/00B82Y40/00
CPCB82B1/00B82B3/0014B82Y15/00B82Y40/00G01J5/20G01J2005/204G01J2005/206
Inventor 余林蔚孙莹董泰阁王军转
Owner NANJING UNIV
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