A kind of microbolometer and preparation method thereof
A technology of a microbolometer and a growth method, which is applied in the field of preparing a new type of microbolometer device with high thermal resistance coefficient of amorphous silicon, can solve the problems of poor chemical stability, large thermal conductivity of the device, low electrical conductivity, etc. Improve detection and reading, reduce heat transfer effect
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[0031] The present invention will be further explained below in conjunction with the accompanying drawings and specific embodiments.
[0032] Such as Figure 2-3 As shown, this embodiment discloses a microbolometer, which includes a horizontally distributed planar semiconductor crystalline nanowire array 1 and amorphous silicon layered sequentially above the planar semiconductor crystalline nanowire array from bottom to top. Layer 2 and Silicon Nitride Layer 3.
[0033] Both ends of the planar semiconductor crystalline nanowires are provided with metal electrodes. Its metal electrodes can be PT (12nm)-AL (80nm) system, Ti-Au system, Ni and other metal materials, and the metal contact can be improved by rapid thermal annealing process. The evaporation method may use a thermal evaporation system, a magnetron sputtering system, or an electron beam evaporation system.
[0034] Also disclosed in this embodiment is a preparation method for a microbolometer, such as figure 1 As s...
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