Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Rare earth doped indium gallium zinc oxide powder as well as preparation method and application thereof

A technology of indium gallium zinc oxide and rare earth doping, applied in ion implantation plating, coating, metal material coating process and other directions, can solve the problem of uneven composition and so on

Inactive Publication Date: 2020-08-25
XIANDAO THIN FILM MATERIALS GUANGDONG CO LTD
View PDF7 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The purpose of the present invention is to overcome the deficiencies of the prior art, and to provide a rare earth-doped indium gallium zinc oxide powder and its preparation method and application, which are used to avoid large particle size rare earth elements from being mixed into indium gallium zinc oxide powder Inhomogeneity of the composition caused by the body, the rare earth doped indium gallium zinc oxide powder with uniform composition can be prepared, and the specific application of the indium gallium zinc oxide powder can be used to prepare rare earth doped with high density, uniform structure and excellent photoelectric properties. Indium Gallium Zinc Oxide Target

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Rare earth doped indium gallium zinc oxide powder as well as preparation method and application thereof
  • Rare earth doped indium gallium zinc oxide powder as well as preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0027] According to the first aspect of the present invention, there is provided a method for preparing rare earth-doped indium gallium zinc oxide powder, which includes the following steps.

[0028] S1: Add water, first dispersant, gallium oxide powder, and rare earth oxide powder to the first mixing tank in sequence for pre-dispersion for the first preset time period to obtain the first mixed liquid, and grind the first mixed liquid for the second The first mixed slurry is obtained after a preset period of time.

[0029] In this example, due to the rare earth oxide (Re 2 o 3) and gallium oxide (Ga 2 o 3 ) The particles of these two oxide powders are relatively large, and the grinding requirements are relatively high, so they need to be ground first.

[0030] The first dispersant is one of polyvinyl pyrrolidone (PVP for short), sodium dodecyl benzene sulfonate (SDBS for short) or sodium hexadecyl benzene sulfonate. A dispersant is preferably polyvinylpyrrolidone, the dur...

Embodiment 1

[0054] With cerium oxide (CeO 2 ) powder and praseodymium oxide (Pr 6 o 11 ) powder is used as raw material to prepare rare earth doped indium gallium zinc oxide powder, and the preparation method includes the following steps.

[0055] (1) Add water, dispersant polyvinylpyrrolidone, gallium oxide (Ga 2 o 3 ) powder, cerium oxide powder (CeO 2 ) and praseodymium oxide (Pr 6 o 11 ) powder was pre-dispersed for 10 min, wherein the mass of dispersant accounted for dispersant, gallium oxide (Ga 2 o 3 ) powder, cerium oxide powder (CeO 2 ) and praseodymium oxide (Pr 6 o 11 ) 10% of the total mass of solids such as powder, and 35% of the total mass of solids and water. The pre-dispersed solution was pumped into a sand mill (using zirconium balls with a diameter of 0.2 mm), the grinding speed was 1800 r / min, and the grinding time was 8 hours to obtain the first mixed slurry.

[0056] (2) Add water, dispersant polyvinylpyrrolidone, and zinc oxide (ZnO) powder to the second ...

Embodiment 2

[0062] Lanthanum oxide (La 2 o 3 ) powder is used as raw material to prepare rare earth doped indium gallium zinc oxide powder, and the preparation method includes the following steps.

[0063] (1) Add water, dispersant polyvinylpyrrolidone, gallium oxide (Ga 2 o 3 ) powder and lanthanum oxide (La 2 o 3 ) powder was pre-dispersed for 15 min, where the mass of dispersant accounted for dispersant, gallium oxide (Ga 2 o 3 ) powder and lanthanum oxide (La 2 o 3 ) 1% of the total mass of solids such as powder, and the mass of solids accounts for 50% of the total mass of solids and water. The pre-dispersed solution was pumped into a sand mill (using zirconium balls with a diameter of 1.5 mm), the grinding speed was 800 r / min, and the grinding time was 5 hours to obtain the first mixed slurry.

[0064] (2) Add water, dispersant polyvinylpyrrolidone, and zinc oxide (ZnO) powder to the second mixing tank in sequence for pre-dispersion for 15 minutes, wherein the mass of the di...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Particle sizeaaaaaaaaaa
Specific surface areaaaaaaaaaaa
Login to View More

Abstract

The invention relates to a preparation method of rare earth doped indium gallium zinc oxide powder. The method comprises the following steps of: sequentially adding water, a dispersing agent, galliumoxide powder and rare earth oxide powder into a first mixing barrel to perform pre-dispersion on the added raw materials, and grinding an obtained pre-dispersed solution to obtain first mixed slurry;sequentially adding water, a dispersing agent and zinc oxide powder into a second mixing barrel to perform pre-dispersion on the added raw materials, adding an obtained pre-dispersed solution into thefirst mixed slurry to perform grinding so as to obtain second mixed slurry; sequentially adding water, a dispersing agent and indium oxide powder into a third mixing barrel for pre-dispersing, and adding an obtained pre-dispersed solution into the second mixed slurry so as to perform grinding to obtain third mixed slurry; adding an adhesive into the third mixed slurry, and performing grinding toobtain fourth mixed slurry; and granulating, mixing and screening the fourth mixed slurry to finally obtain the rare earth doped indium gallium zinc oxide powder. According to the preparation method of the invention, the problem of non-uniform components caused by doping of large-particle-size rare earth elements into IGZO powder can be solved.

Description

technical field [0001] The invention relates to the field of preparation of indium gallium zinc oxide powder, in particular to a rare earth doped indium gallium zinc oxide powder and its preparation method and application. Background technique [0002] In the current flat panel display (FPD) market, thin film transistor (TFT) displays occupy an absolute dominant position, with an annual global output value of hundreds of billions of dollars. In the manufacture of thin film transistor (TFT) displays, the core technology is the manufacture of the driving mechanism thin film transistor (TFT), and one of the keys to the performance of the thin film transistor (TFT) is the semiconductor channel layer material that produces switching under an electric field. Such semiconductor channel materials can be classified into the following three categories: amorphous silicon (a-Si), polycrystalline silicon (poly-Si) and oxide semiconductors (represented by indium gallium zinc oxide, referr...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C04B35/453C04B35/626C04B35/622C23C14/35C23C14/08
CPCC04B35/453C04B35/622C04B35/6261C04B35/6263C04B2235/3224C04B2235/3225C04B2235/3227C04B2235/3229C04B2235/3286C23C14/08C23C14/3414C23C14/35
Inventor 罗洋凤吾生张莉兰何坤鹏利镇升
Owner XIANDAO THIN FILM MATERIALS GUANGDONG CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com