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Preparation method of perovskite thin film optoelectronic devices based on electron irradiation modification

A technology for electron irradiation and optoelectronic devices, which is applied in the fields of electro-solid devices, semiconductor/solid-state device manufacturing, and electrical components, etc. It can solve the problems of complex process of high-efficiency solar cell devices, unfavorable industrial production, and insignificant performance improvement. Improve preparation quality and device performance, suitable for large-scale production, and reduce the effect of grain boundary effects

Active Publication Date: 2022-07-22
SHANGHAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the existing technology for preparing large-grain-size thin films and high-efficiency solar cell devices is complicated in process, performance improvement is not obvious, and stability is poor, which is not conducive to subsequent possible industrial production.

Method used

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  • Preparation method of perovskite thin film optoelectronic devices based on electron irradiation modification
  • Preparation method of perovskite thin film optoelectronic devices based on electron irradiation modification
  • Preparation method of perovskite thin film optoelectronic devices based on electron irradiation modification

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] a. Etching and cleaning of FTO conductive glass:

[0041] a-1. Etching is performed on the fluorine-doped tin oxide (FTO) conductive glass. The area of ​​the FTO conductive glass is 4cm×2cm, and the effective area of ​​3 devices is divided, and the area of ​​each effective area is 10mm×4mm; Use tape to protect the effective area and electrode area of ​​the device, and then use 2mol / L hydrochloric acid (HCl) diluted with zinc powder and deionized water to etch the part of the etching groove just exposed by the tape. The etching time is 5-10s. The width of the etching groove is 1.5mm; after that, wipe off the excess zinc powder and hydrochloric acid, tear off the tape, and complete the isolation of the negative electrode and the effective area from the positive electrode area;

[0042] a-2. After the etching is completed, first ultrasonically clean the etched FTO conductive glass with deionized water for 3 times for 20 minutes each time; then ultrasonically clean the FTO ...

Embodiment 2

[0062] This embodiment is basically the same as the first embodiment, and the special features are:

[0063] In this embodiment, a preparation method of a perovskite thin film solar cell device based on electron irradiation modification includes the following steps:

[0064] a. Etching and cleaning of FTO conductive glass

[0065] a-1. Etching is performed on the fluorine-doped tin oxide (FTO) conductive glass. The area of ​​the FTO conductive glass is 4cm×2cm, and the effective area of ​​3 devices is divided, and the area of ​​each effective area is 10mm×4mm; Use tape to protect the effective area and electrode area of ​​the device, and then use 2mol / L hydrochloric acid (HCl) diluted with zinc powder and deionized water to etch the part of the etching groove just exposed by the tape. The etching time is 5-10s. The width of the etching groove is 1.5mm; after that, wipe off the excess zinc powder and hydrochloric acid, tear off the tape, and complete the isolation of the negat...

Embodiment 3

[0110] a. Etching and cleaning of FTO conductive glass

[0111] a-1. Etching is performed on the fluorine-doped tin oxide (FTO) conductive glass. The area of ​​the FTO conductive glass is 4cm×2cm, and the effective area of ​​3 devices is divided, and the area of ​​each effective area is 10mm×4mm; Use tape to protect the effective area and electrode area of ​​the device, and then use 2mol / L hydrochloric acid (HCl) diluted with zinc powder and deionized water to etch the part of the etching groove just exposed by the tape. The etching time is 5-10s. The width of the etching groove is 1.5mm; after that, wipe off the excess zinc powder and hydrochloric acid, tear off the tape, and complete the isolation of the negative electrode and the effective area from the positive electrode area;

[0112] a-2. After the etching is completed, first ultrasonically clean the etched FTO conductive glass with deionized water for 3 times for 20 minutes each time; then ultrasonically clean the FTO c...

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Abstract

The invention discloses a preparation method of a perovskite thin film optoelectronic device based on electron irradiation modification, and belongs to the field of optoelectronic devices. In the present invention, the lead halide precursor solution of the perovskite film is irradiated with electrons, and then spin-coated to form the precursor film, and after the methylamine iodine solution is added dropwise, the modified perovskite film is obtained through reaction and annealing, and is prepared device. The perovskite thin film prepared by the invention has large grain size and smooth surface, which can passivate the interface, effectively reduce the grain boundary effect, and promote the ability of photons to transfer into electrons, thereby reducing the series resistance of the device, increasing the filling factor and the photoelectricity. Conversion efficiency. The method of the invention is simple and convenient in process and has good repeatability, provides a feasible solution for large-scale production of high-performance perovskite thin film optoelectronic devices, and significantly improves device performance.

Description

technical field [0001] The invention relates to a method for preparing an optoelectronic device, in particular to the application of electron irradiation technology in the modification of perovskite thin films, which is suitable for the technical field of perovskite thin film optoelectronic devices. Background technique [0002] The photoelectric conversion efficiency of perovskite solar cells has rapidly developed from 3.9% in 2009 to more than 25% now. Its amazing efficiency improvement speed and low fabrication cost are the focus of modern solar technology. Electron irradiation technology is a new type of redox technology that can be used for the synthesis or modification of nanomaterials. It has shown excellent adaptability in the modification of many high-performance materials such as titanium oxide, carbon nanotubes, and graphene. [0003] Optimizing the morphology of the lead halide precursor film, promoting the perovskite reaction process, and increasing the perovski...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/42H01L51/48H01L51/00H10K99/00
CPCH10K71/12H10K30/151Y02E10/549
Inventor 杨伟光郭辉陈伟王聪黄璐崔星煜
Owner SHANGHAI UNIV
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