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Heavy rare earth doped ZnO columnar crystal preferred orientation piezoelectric film material and preparation method thereof

A technology of preferential orientation and piezoelectric thin film, which is applied in the material selection of piezoelectric devices or electrostrictive devices, the manufacture/assembly of piezoelectric/electrostrictive devices, and the selection of device materials, etc., it is easy to achieve process parameters, Stable structure and good compactness

Pending Publication Date: 2020-12-04
WUHAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the application of pulsed arc ion plating technology on piezoelectric thin films has not been reported.

Method used

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  • Heavy rare earth doped ZnO columnar crystal preferred orientation piezoelectric film material and preparation method thereof
  • Heavy rare earth doped ZnO columnar crystal preferred orientation piezoelectric film material and preparation method thereof
  • Heavy rare earth doped ZnO columnar crystal preferred orientation piezoelectric film material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] A heavy rare earth-doped ZnO columnar crystal preferred orientation piezoelectric thin film material, the preparation method of which comprises the following steps:

[0036] 1) Preparation of heavy rare earth doped zinc target material, mixing heavy rare earth and zinc powder to prepare mixed powder, using hot isostatic pressing technology (500°C, 30MPa) to press into heavy rare earth doped zinc target material; The doping ratio is 5 at.%, and the doping conditions of each specific rare earth element are: yttrium 1 at.%, scandium 2 at.%, erbium 2 at.%;

[0037] 2) The Si substrate is ultrasonically cleaned with acetone and deionized water in sequence, and then dried in a nitrogen environment and placed in a vacuum chamber. The substrate is glow-cleaned in an inert gas (nitrogen) environment with a target distance of 25 cm , the glow cleaning bias voltage is -500V, and the air pressure is 2.5Pa;

[0038] 3) After the glow cleaning is finished, in the argon and oxygen at...

Embodiment 2

[0041] A heavy rare earth-doped ZnO columnar crystal preferred orientation piezoelectric thin film material, the preparation method of which comprises the following steps:

[0042]1) Preparation of heavy rare earth doped zinc target material, mixing heavy rare earth and zinc powder to prepare mixed powder, using hot isostatic pressing technology (500°C, 30MPa) to press into heavy rare earth doped zinc target material; The doping ratio is 5 at.%, and the doping conditions of each specific rare earth element are: yttrium 3 at.%, scandium 1 at.%, erbium 1 at.%;

[0043] 2) The Si substrate was ultrasonically cleaned with acetone and deionized water in sequence, and then dried in a nitrogen environment and placed in a vacuum chamber. The substrate was glow-cleaned with a target-base distance of 30 cm and an inert gas environment. The cleaning bias voltage is -600V, and the air pressure is 2.4Pa;

[0044] 3) After glow cleaning, in argon and oxygen atmosphere, the temperature is c...

Embodiment 3

[0047] A heavy rare earth-doped ZnO columnar crystal preferred orientation piezoelectric thin film material, the preparation method of which comprises the following steps:

[0048] 1) Preparation of heavy rare earth doped zinc target material, mixing heavy rare earth and zinc powder to prepare mixed powder, using hot isostatic pressing technology (500°C, 30MPa) to press into heavy rare earth doped zinc target material; The doping ratio is 2.5 at.%, and the doping conditions of each specific rare earth element are: 0.5% yttrium, 1% scandium, and 1% erbium;

[0049] 2) The quartz glass is ultrasonically cleaned with acetone and deionized water in sequence, and then dried in a nitrogen environment and placed in a vacuum chamber. Under the target-base distance of 30cm and an argon environment, the substrate is glow-cleaned, glow-cleaned The bias voltage is -700V, and the air pressure is 2.3Pa;

[0050] 3) After the glow cleaning, in the argon and oxygen atmosphere, the temperatur...

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Abstract

The invention provides a heavy rare earth doped ZnO columnar crystal preferred orientation piezoelectric film material aiming at the defects of the existing preparation technology of a zinc oxide thinfilm, and the quality and the deposition rate of the zinc oxide thin film are effectively improved by comprehensively utilizing a plurality of strengthening technologies and preparation technologies.Ternary heavy rare earth elements are doped into the ZnO film, so that grains of a ZnO material can be effectively refined, the density of the ZnO material is improved, the crystallization property of a film layer is improved, and the piezoelectric constant is further improved; besides, in order to overcome the defects of low adhesive force, low deposition speed and the like of a radio frequencymagnetron sputtering technology, the advantages of high-energy pulsed arc and target poisoning are utilized to implement the quick deposition process of the ZnO film, thereby preparing the ternary heavy rare earth doped ZnO nano piezoelectric film with high surface quality and stable structure, and controllable adjustment of dielectric properties, transparency and other properties of the thin filmcan be realized, so that the thin film can meet the application requirements on devices in different piezoelectric fields.

Description

technical field [0001] The invention belongs to the technical field of piezoelectric thin film materials, and in particular relates to a heavy rare earth-doped ZnO columnar crystal preferred orientation piezoelectric thin film material and a preparation method thereof. Background technique [0002] Piezoelectric materials are functional materials that can realize mutual conversion between mechanical energy and electrical energy. Since the piezoelectric effect was discovered in the 1980s, the development of piezoelectric materials has received extensive attention. With the deepening of research, piezoelectric materials are mainly divided into inorganic piezoelectric materials (piezoelectric crystals, piezoelectric ceramics, etc.), organic piezoelectric materials (PVDF, etc.) and composite piezoelectric materials (piezoelectric ceramics and polymer composites, etc.) The three categories can be widely used in the fields of transducers, sensors, drives, robots and new energy. W...

Claims

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Application Information

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IPC IPC(8): H01L41/18H01L41/37H01L41/39
CPCH10N30/85H10N30/852H10N30/092H10N30/093Y02P70/50
Inventor 李敬雨杨兵刘琰张俊李正刚雷燕郭嘉琳
Owner WUHAN UNIV
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