Copper-indium-gallium-selenium thin-film solar cell module and preparation method thereof

Abstract

The invention provides a copper-indium-gallium-selenium thin-film solar cell module and a preparation method thereof. The method comprises the following steps: providing a copper-indium-gallium-selenium solar cell thin film; etching the battery film at an etching depth which is stopped on the upper surface of the substrate to form a first etching seam; etching the cell film by using picosecond infrared laser, and stopping etching depth on the upper surface of the back electrode layer to form a third etching seam; performing insulating material coating on the first carving seam and the third carving seam; using picosecond infrared laser to scribe the cell film, stopping the scribing depth on the upper surface of the back electrode layer, and forming a second scribing seam between the firstscribing seam and the third scribing seam; and performing conducting material coating on the second carving seam. Through one-stop centralized laser scribing treatment, the equipment error is small, the process window is large, a coating process does not need to be adjusted to adapt to a scribing process, and the process compatibility is improved; burrs or surface residual chippings are avoided, and the hidden danger of battery short circuit is eliminated; and the notch line width is small, the dead zone area is reduced, and the conversion efficiency of the battery assembly is improved.

Description

Technical field[0001]The present invention relates to the technical field of thin film solar cells, and in particular to a copper indium gallium selenium thin film solar cell component and a preparation method thereof.Background technique[0002]With the increasing energy crisis and environmental pollution, how to increase the proportion of renewable energy and adjust the energy structure has become the mainstream of social development. As an important renewable energy source, solar energy has received extensive attention in recent years and has developed rapidly.[0003]Copper Indium Gallium Selenide (CuInGaSe2, Referred to as CIGS) thin-film solar cell is a device that can convert light energy into electrical energy. Its basic structure includes p-type CIGS and n-type CdS / In2S3The PN heterojunction formed after semiconductor materials contact each other, where the direction of the built-in electric field of the PN junction is from the n-type semiconductor to the p-type semiconductor. ...

AI Technical Summary

Problems solved by technology

Although the mechanical scribing method is simple and direct, the large line width leads to a large dead zone, which affects the photoelectric conversion efficiency; the edge chipping phenomenon is serious, and the residue falls into the groove, which may cause a short circuit; the mechanical needle directly contacts the film layer, causing wear and tear. Large, it needs to be shut down for replacement every few days, which seriously affects production; at the same time, the laser equipment for marking processes in different processes is far away from each other, and cannot be processed in a centralized manner. The cost of equipment is high, the error is large, and the efficiency is low

Images