Unlock instant, AI-driven research and patent intelligence for your innovation.

CZT film material with composite substrate structure and preparation method of CZT film material

A technology of composite substrates and thin film materials, which is applied in the fields of polycrystalline material growth, chemical instruments and methods, metal material coating processes, etc. The effect of improving crystal quality

Inactive Publication Date: 2021-03-19
SHANGHAI UNIV
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the limitations of the preparation process of CZT thin film materials, CZT thin films are generally polycrystalline thin films, which have the inherent defects of general polycrystalline materials, and their crystal quality is weaker than single crystal

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • CZT film material with composite substrate structure and preparation method of CZT film material
  • CZT film material with composite substrate structure and preparation method of CZT film material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] In this example, see figure 1 , a kind of CZT thin film material with composite substrate structure, the structure of described CZT thin film adopts the combined form of the sandwich structure of substrate-composite substrate-semiconductor, and described composite substrate is made of zinc oxide base film layer and metal catalyst Layers are stacked and assembled into a combined structure; the zinc oxide-based film layer is grown on the substrate by the magnetron sputtering deposition method, and then the metal catalyst layer is grown on the zinc oxide-based film layer by vacuum evaporation or electron beam evaporation deposition method to obtain Composite substrate structure; then use the near space sublimation method to continue to prepare CZT thin film on the composite substrate structure, so as to obtain the CZT thin film with composite substrate structure. A high borosilicate glass substrate with a thickness of 1mm is used, and the total thickness of the composite s...

Embodiment 2

[0048] This embodiment is basically the same as the aforementioned implementation, and the special features are:

[0049] In this example, see figure 1 , a kind of CZT thin film material with composite substrate structure, the structure of described CZT thin film adopts the combined form of the sandwich structure of substrate-composite substrate-semiconductor, and described composite substrate is made of zinc oxide base film layer and metal catalyst Layers are stacked and assembled into a combined structure; the zinc oxide-based film layer is grown on the substrate by the magnetron sputtering deposition method, and then the metal catalyst layer is grown on the zinc oxide-based film layer by vacuum evaporation or electron beam evaporation deposition method to obtain Composite substrate structure; then use the near space sublimation method to continue to prepare CZT thin film on the composite substrate structure, so as to obtain the CZT thin film with composite substrate structu...

Embodiment 3

[0061] This embodiment is basically the same as the above-mentioned embodiment, and the special features are:

[0062] In this example, see figure 1 , a kind of CZT thin film material with composite substrate structure, the structure of described CZT thin film adopts the combined form of the sandwich structure of substrate-composite substrate-semiconductor, and described composite substrate is made of zinc oxide base film layer and metal catalyst Layers are stacked and assembled into a combined structure; the zinc oxide-based film layer is grown on the substrate by the magnetron sputtering deposition method, and then the metal catalyst layer is grown on the zinc oxide-based film layer by vacuum evaporation or electron beam evaporation deposition method to obtain Composite substrate structure; then use the near space sublimation method to continue to prepare CZT thin film on the composite substrate structure, so as to obtain the CZT thin film with composite substrate structure....

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a CZT film material with a composite substrate structure and a preparation method of the CZT film material. A tellurium-zinc-cadmium film adopts a combined form of a substrate-composite substrate-semiconductor sandwich structure. The composite substrate structure is a structure formed by stacking, assembling and combining a zinc oxide-based film layer and a metal catalyst layer. The composite substrate structure is adopted in the traditional tellurium-zinc-cadmium thin film growth process. Compared with a traditional growth mode, the composite substrate structure technology adopted by the invention has the advantages that the growth speed of the obtained film is higher, the grain size of the film is larger, the crystal quality of the film is higher, and the surfaceappearance of the film is adjustable. The film material prepared by the invention has important significance and application prospect in the aspects of energy acquisition, safety monitoring and radiation protection in the fields of energy, public safety, military affairs, nuclear industry, nuclear medicine, scientific research, aerospace and the like.

Description

technical field [0001] The invention relates to a cadmium zinc telluride material and a preparation method thereof, in particular to a CZT thin film material and a preparation method for regulating and controlling the growth of the cadmium zinc telluride thin film, and belongs to the technical field of inorganic non-metallic material manufacturing technology. Background technique [0002] Cadmium zinc telluride (CdZnTe), hereinafter referred to as CZT, is an important compound semiconductor material, due to its tunable direct bandgap (about 1.5eV-2.3eV), high atomic number, high quantum efficiency, good charge transport characteristics And the high mobility lifetime product (μτ) and other characteristics make it have broad application prospects in the fields of high-energy radiation detectors, solar cells, and photolysis of water to produce hydrogen. Its preparation and application research has become a hot spot in related fields at home and abroad. [0003] Existing CZT dev...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C25B11/069C25B11/075C25B1/04C25B1/55C23C14/35C23C14/08C23C14/18C23C14/30C30B28/12C30B29/46H01L31/0296
CPCC25B1/04C23C14/35C23C14/086C23C14/30C23C14/18C30B28/12C30B29/46H01L31/02966Y02E60/36
Inventor 黄健黄浩斐陈卓睿尚艺张志洛唐可王林军
Owner SHANGHAI UNIV