Room-temperature NO2 sensor based on ZnO microsphere and CsPbBr3 quantum dot composite material and preparation method thereof

A composite material and quantum dot technology, applied in the field of semiconductor oxide gas sensors, can solve the problems of lack of long-term stability, low repeatability, and low response.

Active Publication Date: 2021-04-20
JILIN UNIV
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  • Abstract
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  • Application Information

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Problems solved by technology

Although there are a few experimental results that show that perovskite can also be used in gas sensing, it is worth noting that the use of pure

Method used

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  • Room-temperature NO2 sensor based on ZnO microsphere and CsPbBr3 quantum dot composite material and preparation method thereof
  • Room-temperature NO2 sensor based on ZnO microsphere and CsPbBr3 quantum dot composite material and preparation method thereof
  • Room-temperature NO2 sensor based on ZnO microsphere and CsPbBr3 quantum dot composite material and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0034] 1. Mix 1.188g Zn(NO 3 ) 2 ·6H 2 O, 0.56g hexamethylenetetramine, 0.296g C 6 h 5 NaO 7 2H 2 O was added to 150 mL of deionized water. The mixture was stirred continuously at room temperature, and then the sealed mixture was placed in an oil bath at 90° C. for 30 minutes. The precipitate produced during this process was collected by centrifugal washing several times with deionized water and ethanol, and then heated in a vacuum oven at 120° C. for 4 hours. Finally, the powder was annealed at 400 °C for 2 hours to obtain ZnO microspheres.

[0035] 2. Mix 0.814g Cs 2 CO 3 , 2.5 mL of oleic acid and 30 mL of octadecene were mixed and degassed under vacuum at 120 ° C for 1 hour, and then the resulting mixture was heated to 150 ° C under nitrogen for 3 hours until a clear precursor solution of cesium and oleic acid was formed ; Second, 0.376mmol of PbBr 2 Mix it with 10mL of octadecene, dry it under vacuum at 120°C for 1 hour, and then dry it at 120°C under N 2 Inje...

Embodiment 2

[0041] Prepare ZnO microspheres and CsPbBr according to the method of embodiment 1 3 Quantum dots, changing the ratio of mixing the two. Take 0.043 mL of CsPbBr 3 The solution was mixed with 3 mL of n-hexane solution containing 50 mg of zinc oxide, and the CsPbBr in the prepared device 3 The mass is 0.5% of the mass of ZnO, marked as ZnO-0.5%CsPbBr 3 . The device preparation method and testing method are consistent with Example 1.

Embodiment 3

[0043] Prepare ZnO microspheres and CsPbBr according to the method of embodiment 1 3 Quantum dots, changing the ratio of mixing the two. Take 0.129 mL of CsPbBr 3 The solution was mixed with 3 mL of n-hexane solution containing 50 mg of zinc oxide, and the CsPbBr in the prepared device 3 The mass is 1.5% of the mass of ZnO, marked as ZnO-1.5%CsPbBr 3 . The device preparation method and testing method are consistent with Example 1.

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Abstract

The invention discloses a room-temperature NO2 sensor based on a ZnO microsphere and CsPbBr3 quantum dot heterostructure composite material and a preparation method thereof, and belongs to the technical field of semiconductor oxide gas sensors. The sensor is composed of a ceramic chip substrate with a metal interdigital electrode and a ZnO microsphere and CsPbBr3 quantum dot heterostructure composite material sensitive layer coating the metal interdigital electrode. The morphology of zinc oxide is of a sphere structure, has a large specific surface area, and can provide more attachment sites, so that zinc oxide is in full contact with perovskite CsPbBr3 quantum dots with small sizes, and a gas sensitive element with good gas sensitive response and high response recovery speed is obtained. In addition, the CsPbBr3 quantum dots are used as an excellent photoelectric material and can absorb visible light, so that more photon-generated carriers are provided. The sensor provided by the invention adopts a planar structure, and is simple in process, short in manufacturing period and suitable for mass production.

Description

technical field [0001] The invention belongs to the technical field of semiconductor oxide gas sensors, in particular to a sensor based on ZnO microspheres and CsPbBr 3 Room temperature NO of quantum dot heterostructure composites 2 Sensors and methods of making them. Background technique [0002] NO 2 As a toxic gas, it mainly comes from high-temperature combustion, such as automobile exhaust, boiler exhaust gas and industrial waste. It is a precursor of photochemical smog and one of the causes of acid rain, causing many serious problems to the water cycle in the atmosphere and the growth of natural plants. Furthermore, when NO 2 After the formed nitrite enters the blood, it combines with hemoglobin to form methemoglobin, which can cause tissue hypoxia. Therefore, NO 2 The existence of NO seriously threatens the daily activities and health of human beings. For highly sensitive and selective NO 2 The research of gas sensor has very important significance. [0003] In...

Claims

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Application Information

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IPC IPC(8): G01N27/12
Inventor 刘凤敏李月月卢革宇孙思琦
Owner JILIN UNIV
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