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Method for separating, recycling and reusing FTrPSA in etching tail gas containing HF/HCl

A technology for tail gas and etching, applied in hydrogen separation, chemical instruments and methods, using solid contact hydrogen separation, etc., can solve the problems of non-recycling, general treatment effect, high cost, etc., and reduce the cost of raw materials and environmental protection treatment of tail gas. Effect

Active Publication Date: 2021-04-27
ZHEJIANG TIANCAIYUNJI TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the treatment effect of plasma on the etching tail gas with relatively high content of HF, HCl, etc. is average, and the cost is expensive, so it is only suitable for small-scale tail gas treatment
[0010] The above-mentioned existing etching tail gas treatment methods all aim to make the toxic and harmful components harmless and discharge the tail gas up to the standard. A large amount of very valuable HF, HCl or H in the tail gas 2 can't be recycled

Method used

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  • Method for separating, recycling and reusing FTrPSA in etching tail gas containing HF/HCl
  • Method for separating, recycling and reusing FTrPSA in etching tail gas containing HF/HCl
  • Method for separating, recycling and reusing FTrPSA in etching tail gas containing HF/HCl

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044] Such as figure 1 Shown, a kind of method containing HF / HCl etching tail gas FTrPSA separation and recycling recycling, raw material gas, from the tail gas produced by silicon-based wafer chip dry etching process, mainly contains inert carrier gas hydrogen (H 2 ) 83% (v / v), effective components hydrogen fluoride (HF) 9% and hydrogen chloride (HCl) 5%, and a small amount of water (H 2 O), silicon tetrafluoride (SiF 4 ), silicon tetrachloride (SiCl 4 ), silane (SiH 4 ), methane (CH 4 ), carbon monoxide (CO), carbon dioxide (CO 2 ), and trace or trace amounts of volatile organic compounds (VOCs), metal ions (Me+), fine solid and aerosol particles (SS), and some impurity components of high fluorosilane acid / high chlorosilane, at normal temperature and pressure.

[0045] The specific implementation steps include,

[0046] (1) Pretreatment, the raw material gas is pressurized and sent to the pretreatment unit consisting of dust collector, particle filter, oil mist collec...

Embodiment 2

[0055] Such as figure 2 As shown, on the basis of Example 1, when the HCl concentration in the feed gas is less than 1%, and the HF concentration increases to about 13%, the purified feed gas directly enters the medium temperature pressure swing adsorption process, and the crude HF gas flowing out from the top of the 1#PSA tower , the condensed non-condensable gas 2 is exported through precision filtration and deionized water absorption to obtain a 40% HF aqueous solution, and the non-condensable gas 3 formed after water absorption is exported as hydrogen-rich gas and used as fuel gas. The crude HF liquid formed after condensation enters HF rectification after precision filtration, and the desorption gas flowing out from the bottom of the 1#PSA adsorption tower in the desorption step is pressurized to 0.2-0.3MPa and then from the 2#PSA The bottom of the adsorption tower enters, and the intermediate gas of the non-adsorbed phase flowing out from the top of the 2#PSA adsorption...

Embodiment 3

[0057] Such as image 3 As shown, on the basis of Example 1, the HF concentration (5%) in the feed gas is less than the working condition of the HCl concentration (9%), and the purified feed gas from the pretreatment process enters the Chlorosilane / HCl spray absorption process, the non-condensable gas 1 flowing out from the top of the spray absorption tower, the non-condensable gas 2 formed after condensation, then enters the medium temperature pressure swing adsorption process composed of two stages of PSA, and forms after condensation The condensed liquid directly enters the HCl refining process, and the absorption liquid flowing out from the bottom of the spray absorption tower enters the multi-stage evaporation / compression / condensation process.

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Abstract

The invention discloses a method for separating, recovering and reusing FTrPSA in etching tail gas containing HF / HCl, and relates to the field of recycling and reusing environmental protection of effective components of etching tail gas in a semiconductor manufacturing process. The method mainly comprises: HF / HCl-containing dry etching tail gas is subjected to pretreatment, chlorosilane / HCl spraying absorption, medium-temperature pressure swing adsorption, HF rectification, multi-stage evaporation / compression / condensation, HCl refining, chlorosilane medium-shallow cooling rectification and tail gas absorption in sequence to obtain HF and HCl product gas with the purity larger than or equal to 99.99%, and the HF and HCl product gas is returned to the dry etching process to be recycled, wherein medium-temperature pressure swing adsorption is two-stage PSA, HF rectification is upper and lower stages, and HCl refining is two-tower rectification. According to the method, HF and HCl are separated and recovered from the HF / HCl-containing dry etching tail gas and returned to the etching process to be recycled, the etching gas raw material cost and the tail gas environment-friendly treatment cost are greatly reduced, the problem that in the prior art, only up-to-standard emission is achieved, but comprehensive utilization of the tail gas cannot be achieved is solved, and the blank in the technical field is filled.

Description

technical field [0001] The invention relates to the environmental protection field of effective component recovery and recycling of etching tail gas in the semiconductor manufacturing process, and more specifically relates to a method for separating and recycling FTrPSA (full temperature range pressure swing adsorption) of etching tail gas containing HF / HCl . Background technique [0002] Etching on silicon-based (Si) or silicon carbide (SiC)-based wafers or epitaxial films is the most important step in the chip manufacturing process of semiconductor integrated circuits (IC), among which fluorine (F), chlorine (Cl) compounds are subjected to plasma or conventional gas dry etching, which has been widely used in the semiconductor industry; for example, the production of integrated circuits (IC) generally includes steps such as deposition, masking, etching and stripping to form and Connect circuit components like transistors, resistors, and capacitors. In the IC manufacturing...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B7/07C01B7/19C01B3/56
CPCC01B7/0712C01B7/0718C01B7/197C01B7/196C01B3/56
Inventor 钟娅玲汪兰海钟雨明陈运唐金财蔡跃明
Owner ZHEJIANG TIANCAIYUNJI TECH CO LTD