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Anti-PID effect assembly and preparation method and application thereof

An effect and component technology, applied in the field of anti-PID effect components and their preparation, which can solve problems such as affecting use

Pending Publication Date: 2021-05-18
湖南旗滨光能科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of this application is to provide an anti-PID effect component and its preparation method and application, aiming to solve the problem that the PID attenuation effect of the components provided in the prior art affects the use

Method used

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  • Anti-PID effect assembly and preparation method and application thereof
  • Anti-PID effect assembly and preparation method and application thereof
  • Anti-PID effect assembly and preparation method and application thereof

Examples

Experimental program
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preparation example Construction

[0042] The second aspect of the embodiment of the present application provides a method for preparing an anti-PID effect component, including the following steps:

[0043] S01. Provide glass substrate,

[0044] S02. A tin oxide layer is provided on either side of the glass substrate to obtain an anti-PID component.

[0045] The preparation method of the anti-PID effect component provided by the second aspect of the present application is that the anti-PID effect component can be obtained by directly setting the tin oxide layer 2 on any side of the glass substrate 1. The preparation process is simple and convenient, and the operation is fast and effective. Facilitate large-scale use.

[0046] In step S01, a glass substrate 1 is provided, and the provided glass substrate 1 is cleaned to remove impurities to ensure that a clean and impurity-free glass substrate 1 is obtained for use.

[0047] In step S02, a tin oxide layer 2 is provided on either side of the glass substrate 1 t...

Embodiment 1

[0060] Components resistant to PID effects

[0061] Components resistant to PID effects

[0062] The anti-PID effect component includes a glass substrate 1; a tin oxide layer 2 arranged on either side of the glass substrate, the tin oxide layer 2 includes a first tin oxide layer 21, and the first tin oxide layer 21 is formed by penetrating into the surface layer of the glass substrate 1 Transition zone; the anti-reflection film layer 3 provided on the surface of the tin oxide layer 2 away from the glass substrate 1 .

[0063] Wherein, the glass substrate is selected from silicate glass, and the iron content in the provided silicate glass is controlled to be 91%, and the thickness of the glass substrate is 2mm;

[0064] The thickness of the first tin oxide layer is 2 microns;

[0065] The anti-reflection film layer is selected from silicon nitride layers, and the thickness of the anti-reflection film layer is 150 nanometers.

[0066] Preparation method of components resi...

Embodiment 2

[0073] Components resistant to PID effects

[0074] Components resistant to PID effects

[0075] The anti-PID effect component includes a glass substrate 1; a tin oxide layer 2 arranged on either side of the glass substrate, the tin oxide layer 2 includes a first tin oxide layer 21, and the first tin oxide layer 21 is formed by penetrating into the surface layer of the glass substrate 1 Transition zone; the anti-reflection film layer 3 provided on the surface of the tin oxide layer 2 away from the glass substrate 1 .

[0076] Wherein, the glass substrate is selected from silicate glass, and the iron content in the provided silicate glass is controlled to be 91%, and the thickness of the glass substrate is 2mm;

[0077] The thickness of the first tin oxide layer is 10 microns;

[0078] The anti-reflection film layer is selected from silicon nitride layers, and the thickness of the anti-reflection film layer is 150 nanometers.

[0079] Preparation method of components res...

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Abstract

The invention relates to the technical field of photovoltaics, and provides an anti-PID effect assembly. The anti-PID effect assembly comprises a glass substrate and a tin oxide layer arranged on any surface of the glass substrate. The ion radius of tin ions is smaller than that of sodium ions and calcium ions, so that the ion potential energy is higher, the binding capacity with oxygen atoms is higher, the tin ions have an obvious aggregation effect, and a glass network structure can be enhanced and is more compact, and accordingly migration of the sodium ions and the calcium ions is limited, carbonate containing the sodium ions and the calcium ions is not formed on the surface of the glass, the glass is protected from serious erosion, the weather resistance of the glass surface and a glass coating can be obviously improved, and the PID attenuation effect on the upper surface of the glass is effectively reduced. Meanwhile, the tin oxide layer has smaller influence on the light transmittance of the whole glass, so that the obtained assembly is stronger in PID effect resistance, excellent in overall performance and wide in application.

Description

technical field [0001] The application belongs to the field of photovoltaic technology, and in particular relates to an anti-PID effect component and its preparation method and application. Background technique [0002] Currently, battery components are divided into five layers during the encapsulation lamination process. From outside to inside: glass, EVA, battery sheet, EVA, backplane. Among them, glass is an amorphous inorganic non-metallic material, generally using a variety of inorganic minerals (such as quartz sand, borax, boric acid, barite, barium carbonate, limestone, feldspar, soda ash, etc.) as the main raw material, and adding a small amount of auxiliary raw materials made. Its main components are silicon dioxide and other oxides. Wherein, in order to increase the transmittance of the glass, the upper surface of the glass is generally coated with an anti-reflection film. When the photovoltaic module is in a humid environment for a long time or the seal is not...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/048H01L31/18
CPCH01L31/048H01L31/0481H01L31/1804Y02P70/50Y02E10/547
Inventor 王杏娟凌根略王敏陶武刚徐兴军
Owner 湖南旗滨光能科技有限公司
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