Anti-PID effect assembly and preparation method and application thereof
An effect and component technology, applied in the field of anti-PID effect components and their preparation, which can solve problems such as affecting use
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[0042] The second aspect of the embodiment of the present application provides a method for preparing an anti-PID effect component, including the following steps:
[0043] S01. Provide glass substrate,
[0044] S02. A tin oxide layer is provided on either side of the glass substrate to obtain an anti-PID component.
[0045] The preparation method of the anti-PID effect component provided by the second aspect of the present application is that the anti-PID effect component can be obtained by directly setting the tin oxide layer 2 on any side of the glass substrate 1. The preparation process is simple and convenient, and the operation is fast and effective. Facilitate large-scale use.
[0046] In step S01, a glass substrate 1 is provided, and the provided glass substrate 1 is cleaned to remove impurities to ensure that a clean and impurity-free glass substrate 1 is obtained for use.
[0047] In step S02, a tin oxide layer 2 is provided on either side of the glass substrate 1 t...
Embodiment 1
[0060] Components resistant to PID effects
[0061] Components resistant to PID effects
[0062] The anti-PID effect component includes a glass substrate 1; a tin oxide layer 2 arranged on either side of the glass substrate, the tin oxide layer 2 includes a first tin oxide layer 21, and the first tin oxide layer 21 is formed by penetrating into the surface layer of the glass substrate 1 Transition zone; the anti-reflection film layer 3 provided on the surface of the tin oxide layer 2 away from the glass substrate 1 .
[0063] Wherein, the glass substrate is selected from silicate glass, and the iron content in the provided silicate glass is controlled to be 91%, and the thickness of the glass substrate is 2mm;
[0064] The thickness of the first tin oxide layer is 2 microns;
[0065] The anti-reflection film layer is selected from silicon nitride layers, and the thickness of the anti-reflection film layer is 150 nanometers.
[0066] Preparation method of components resi...
Embodiment 2
[0073] Components resistant to PID effects
[0074] Components resistant to PID effects
[0075] The anti-PID effect component includes a glass substrate 1; a tin oxide layer 2 arranged on either side of the glass substrate, the tin oxide layer 2 includes a first tin oxide layer 21, and the first tin oxide layer 21 is formed by penetrating into the surface layer of the glass substrate 1 Transition zone; the anti-reflection film layer 3 provided on the surface of the tin oxide layer 2 away from the glass substrate 1 .
[0076] Wherein, the glass substrate is selected from silicate glass, and the iron content in the provided silicate glass is controlled to be 91%, and the thickness of the glass substrate is 2mm;
[0077] The thickness of the first tin oxide layer is 10 microns;
[0078] The anti-reflection film layer is selected from silicon nitride layers, and the thickness of the anti-reflection film layer is 150 nanometers.
[0079] Preparation method of components res...
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