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Novel compound semiconductor heating film and film preparation method

A thin-film preparation and thin-film technology, which is applied in the fields of new compound semiconductor heating films and thin-film preparations, can solve problems such as failure to consider solar cell damage, and achieve the effects of fast production tact, extended service life, and guaranteed reliability.

Active Publication Date: 2022-05-13
ZHONGSHANG TECH (BEIJING) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although this patent document discloses that a barrier layer is provided on one side of the substrate, the barrier layer is used to block oxygen and water vapor, and does not take into account the damage of the substrate to the solar cell in a high-temperature working environment.

Method used

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  • Novel compound semiconductor heating film and film preparation method
  • Novel compound semiconductor heating film and film preparation method

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Experimental program
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Effect test

Embodiment 1

[0049] This embodiment provides a thin film preparation method, comprising the following steps:

[0050] Step 1: The substrate is cleaned. The substrate described in this embodiment is made of polyester film (abbreviated as PET in English). The thickness of the substrate is 175 microns, and the lye and deionized water prepared by glass cleaning solution and sodium hydroxide are used After ultrasonic cleaning for 30 minutes, blow dry for later use;

[0051] Step 1.1: Apply a layer of 4.5 micron thick polyurethane layer on the cleaned substrate by roller coating, and then dry it. The drying environment is 130°C, under the atmosphere, and the drying time is 40 minutes. The polyurethane layer The roughness of the substrate can be reduced and the diffusion of impurities to the heat generating layer can be reduced.

[0052] Step 1.2: After the step 1.1, apply a 4.3-micron-thick acrylate layer by roller coating, and then dry it. The drying environment is 116°C, and the drying time i...

Embodiment 2

[0062] This embodiment provides a new type of compound semiconductor heating film, which includes a base P1 and a heat generating layer P5 made of polyester film or polyimide film, and a barrier layer P4 is provided between the base P1 and the heat generating layer P5;

[0063] The barrier layer P4 is formed on the substrate P1 through a reactive sputtering process using a target material containing silicon;

[0064] The heating layer P5 is formed on the barrier layer P4 by using a target material including indium tin oxide through a sputtering process.

[0065] The thickness of the heating layer P5 is 16nm; an indium tin oxide target material with a tin doping amount of 5-10wt% is used.

[0066] The barrier layer P4 has a thickness of 23 nm.

[0067] In this embodiment, a polyurethane layer P2 and an acrylate layer P3 are provided between the substrate P1 and the barrier layer P4; the polyurethane layer P2 is first formed on the substrate P1, and then the acrylate layer P3 i...

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Abstract

The invention discloses a novel composite semiconductor heating film and a film preparation method. The film preparation method comprises sputtering a barrier layer on a substrate, and sputtering a heating layer on the barrier layer; sputtering with a target material containing silicon A barrier layer is formed, and a target material containing indium tin oxide is used to sputter to form a heating layer. The finally formed new composite semiconductor heating film has high electrothermal conversion efficiency and radiates far-infrared waves that directly penetrate the skin and subcutaneous tissue. During use, when the impurities contained in the substrate diffuse outward due to rising temperature, the barrier layer set between the substrate and the heat-generating layer prevents the impurities in the substrate from diffusing to the heat-generating layer on the one hand, and prevents water vapor from penetrating into the heat-generating layer on the other hand, reducing impurities and water vapor will damage the heating layer. This application introduces the film layer design to match the thermal expansion coefficient and lattice constant of the substrate and the heating layer, improve the reliability of the connection between the layers of the new compound semiconductor heating film during use, and prolong the product life.

Description

technical field [0001] The invention relates to the technical field of compound semiconductor heating film materials, in particular to a novel compound semiconductor heating film and a film preparation method. Background technique [0002] As an emerging heating method, electrothermal film technology has made great progress in recent years. This is due to the fact that the electric heating film generates heat in a planar shape, with a large heat exchange area, coupled with the characteristics of high electrothermal conversion efficiency, so the temperature rises faster and consumes less energy under the same power, so it is more energy-saving and energy-saving than traditional electric heating elements. . In addition, the electrothermal film can also be widely used in the field of health care by radiating far-infrared waves. The far-infrared waves can directly penetrate the skin and subcutaneous tissue, act on blood vessels, nerve endings and lymphatic vessels, cause molecu...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H05B3/12H05B3/02H05B3/06H05B3/04H05B3/20C23C14/35C23C14/20C23C14/08
CPCH05B3/12H05B3/02H05B3/06H05B3/04H05B3/20C23C14/35C23C14/20C23C14/086
Inventor 张伟赵莉
Owner ZHONGSHANG TECH (BEIJING) CO LTD