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Ink, quantum dot film and quantum dot light-emitting diode

A technology of quantum dots and inks, which is applied in the fields of inks, quantum dot films and quantum dot light-emitting diodes. It can solve the problems of poor dispersion of quantum dot inks and uneven film formation, so as to improve quantum efficiency and luminescence performance, and avoid agglomeration , Improving the effect of hole-electron injection balance

Active Publication Date: 2021-06-29
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to provide an ink, a quantum dot film and a quantum dot light-emitting diode, aiming to solve the technical problem of poor dispersion of existing quantum dot inks and uneven film formation to a certain extent

Method used

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  • Ink, quantum dot film and quantum dot light-emitting diode
  • Ink, quantum dot film and quantum dot light-emitting diode
  • Ink, quantum dot film and quantum dot light-emitting diode

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preparation example Construction

[0052] Correspondingly, an embodiment of the present invention provides a method for preparing a quantum dot film, such as figure 1 shown, including the following steps:

[0053] S01: Provide the substrate;

[0054] S02: Deposit the ink described in the embodiment of the present invention on the substrate, and then perform drying treatment to obtain the quantum dot film.

[0055] Specifically, the method of ink configuration includes: firstly dissolving the functional block copolymer in one or several organic solvents according to a certain proportion to obtain a solvent with suitable viscosity, boiling point and surface tension; then dissolving the quantum dots according to a predetermined proportion The quantum dot ink is obtained by dissolving in the above-mentioned modified solvent.

[0056] Specifically, the method for depositing the ink on the base sheet is an inkjet printing method, including: inkjet printing the quantum dot light-emitting layer film by selecting a su...

Embodiment 1

[0064] A method for preparing an ink and an ink printing film forming method, comprising the steps of:

[0065] (1) Functional block polymer modifier: synthesis of mercapto-polystyrene-A-R

[0066] The functional monomer N-phenyl-N,N'-bis(4-methylphenyl)-4,4'-biphenyl-p-vinylaniline 5g of the above-mentioned type I block chain, free radical initiator Mix 5mg of azobisisobutylcyanide (AIBN) and 60mg of phenylethyl dithiobenzoate and dissolve in 50mL of tetrahydrofuran, remove the oxygen in the mixture through vacuum-liquid nitrogen defoaming several times, fill it with nitrogen and heat to 50 Celsius, polymerized for 48 hours. The reactant mixture was cooled in liquid nitrogen for a few seconds to terminate the chain transfer reaction, and then precipitated with n-hexane to obtain a total of 3.4 g of the first functionalized polymer chain macromolecule RAFT reagent.

[0067] Dissolve 3 g of the above-mentioned polymer RAFT reagent, 2 g of styrene, and 2 mg of AIBN in 50 mL of...

Embodiment 2

[0075] A quantum dot light-emitting diode, comprising a laminated structure of an anode and a cathode arranged oppositely, a quantum dot light-emitting layer (the quantum dot light-emitting layer obtained by the preparation method of the above-mentioned embodiment 1) arranged between the anode and the cathode , an electron transport layer disposed between the cathode and the quantum dot light-emitting layer, a hole transport layer disposed between the anode and the quantum dot light-emitting layer, and the anode is disposed on a substrate. Wherein, the material of the substrate is a glass sheet, the material of the anode is an ITO substrate, the material of the hole transport layer is TFB, the material of the electron transport layer is zinc oxide material, and the material of the cathode is Al.

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Abstract

The invention belongs to the technical field of display, and particularly relates to printing ink, a quantum dot film and a quantum dot light-emitting diode. The ink comprises an organic solvent, quantum dots and a block copolymer, wherein the quantum dots and the block copolymer are dispersed in the organic solvent; and the molecular general formula of the block copolymer is sulfydryl-polystyrene-A-R, wherein A is a block chain of formula I in the specification, and R is an aliphatic group or an aromatic group; and y in the formula I is a positive integer. The quantum dot ink containing the specific block copolymer can significantly improve the process film-forming performance and luminescence performance of an ink-jet printing quantum dot luminescence semiconductor.

Description

technical field [0001] The invention belongs to the field of display technology, and in particular relates to an ink, a quantum dot film and a quantum dot light-emitting diode. Background technique [0002] Quantum dot (QD) luminescent materials have the characteristics of changing emission frequency with size change, narrow emission line width, relatively high luminescence quantum efficiency, ultra-high photostability and solution processing. These characteristics make quantum dot light-emitting diodes (QLED) with quantum dot materials as the light-emitting layer have broad application prospects in solid-state lighting, flat panel display and other fields, and have attracted extensive attention from academia and industry. [0003] The solution processing characteristics of quantum dots make the quantum dot light-emitting layer can be prepared by various methods such as spin coating, scraping coating, spraying, and inkjet printing. Among them, the inkjet printing technology...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09D11/30C09D11/50H01L51/50
CPCC09D11/30C09D11/50H10K50/115Y02E10/549
Inventor 李雪
Owner TCL CORPORATION
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