Deposition system for Si-doped multi-layer DLC coating on surface of special-shaped part and method of deposition system
A technology of deposition system and deposition method, which is applied in the field of deposition system of Si-doped multi-layer DLC coating on the surface of special-shaped parts, can solve the problems of unsuitability for industrial promotion, low utilization rate, high price, etc., and achieve large industrial application value, The effect of prolonging the service life and simplifying the installation
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Embodiment 1
[0049] Example 1 A multi-layer Si-doped DLC coating was deposited on the surface of M2 high-speed steel (30 mm×30 mm×3 mm), and the specific deposition process was as follows:
[0050] (1) Soak the M2 high-speed steel sheet in petroleum ether, acetone, alcohol, and deionized water for 20 minutes to remove surface oil; then dry it with nitrogen to obtain a sample.
[0051] (2) The sample is hung on the sample holder 4, and placed in the vacuum chamber 1, and the auxiliary cathode 3 is placed on the periphery, and the vacuum is sealed to 3×10 -3 Pa.
[0052] (3) Introduce argon gas, apply a negative bias voltage to the auxiliary cathode 3 by using a high-voltage pulsed DC power supply, and generate high-density argon plasma inside it to bombard and clean the surface of the sample and preheat it. Deposition conditions: the argon gas flow rate is 150 sccm, the negative bias voltage is 6 kV, the pulse frequency is 1.5 kHz, the gas pressure is 5 Pa, and the processing time is 25 m...
Embodiment 2
[0061] Embodiment 2 Depositing a multi-layer Si-doped DLC coating on the bearing surface, the specific deposition process is as follows:
[0062] ⑴Soak the bearing in petroleum ether, acetone, alcohol and deionized water for 20 minutes to remove surface oil; then dry it with nitrogen.
[0063] (2) The bearing is suspended on the sample holder 4 and placed in the vacuum chamber 1, and an auxiliary cathode 3 is coaxially placed on the periphery and is insulated from the sample and applied with a negative bias of 800 V, and the vacuum is sealed to 3×10 -3 Pa.
[0064] (3) Introduce argon gas, apply a negative bias voltage to the auxiliary cathode 3 by using a high-voltage pulsed DC power supply, and generate high-density argon plasma inside it to bombard and clean the surface of the sample and preheat it. Deposition conditions: the argon gas flow rate is 200 sccm, the negative bias voltage is 8 kV, the pulse frequency is 1.5 kHz, the gas pressure is 6 Pa, and the processing tim...
Embodiment 3
[0067] Example 3 A multi-layer Si-doped DLC coating was deposited on the surface of a drill bit (11.5 cm×8 mm). The specific deposition process is as follows:
[0068] (1) Soak the drill bit in petroleum ether, acetone, alcohol, and deionized water for 20 minutes to remove surface oil; then dry it with nitrogen.
[0069] (2) The drill bit is suspended on the sample holder 4 and placed in the vacuum chamber 1. An auxiliary cathode 3 insulated from the sample is coaxially placed on the periphery, and the vacuum is sealed to 3×10 -3 Pa.
[0070] (3) Introduce argon gas, apply a negative bias voltage to the auxiliary cathode 3 by using a high-voltage pulsed DC power supply, and generate high-density argon plasma inside it to bombard and clean the surface of the sample and preheat it. Deposition conditions: argon gas flow rate of 150 sccm, negative bias voltage of 6 kV, pulse frequency of 1.5 kHz, gas pressure of 8 Pa, and processing time of 30 min.
[0071] (4) After the cleani...
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Abstract
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