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BJT based on two-dimensional transition metal chalcogenide and preparation method thereof

A technology of transition metal chalcogenides and compounds, which is applied in the manufacture of semiconductor/solid-state devices, semiconductor devices, electrical components, etc., can solve the problems of difficult precise control of doping concentration, device limitations, and film damage, and achieve simple structure and reduced damage degree, the effect of improving device performance

Pending Publication Date: 2021-11-02
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in the process of doping by magnetron sputtering, it is necessary to bombard the surface of the film with glowing gas, which still causes some damage to the film, and the doping is only done on the surface of the film, and the doping concentration is not easy to control precisely.
In addition, due to the use of chemical vapor deposition (CVD) to prepare n-type transition metal chalcogenide films, the film area can only reach the order of μm, which makes the prepared devices very limited in practical applications.

Method used

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  • BJT based on two-dimensional transition metal chalcogenide and preparation method thereof
  • BJT based on two-dimensional transition metal chalcogenide and preparation method thereof
  • BJT based on two-dimensional transition metal chalcogenide and preparation method thereof

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preparation example Construction

[0065] The present invention also provides the preparation method of the above-mentioned BJT based on two-dimensional transition metal chalcogenides, such as image 3 shown, including the following steps:

[0066] (S1) Prepare a shielding layer on the upper surface of the dielectric layer in the single crystal silicon substrate with the dielectric layer, exposing only the middle region of the dielectric layer;

[0067] In some optional embodiments, two pieces of adhesive tape can be pasted directly on both sides of the medium layer as a shielding layer, exposing the strip-shaped area in the middle;

[0068] (S2) Spin-coat the first precursor solution on the dielectric layer prepared with the shielding layer, dry after soaking, and obtain sample A;

[0069] The first precursor solution contains sulfur and two-dimensional transition metal elements;

[0070] (S3) After spin-coating photoresist on the upper surface of sample A, remove the shielding layer to obtain sample B;

[...

Embodiment 1

[0092] Dissolve 200mg of thiourea and 80mg of molybdenum pentachloride in 3.75mL of isopropanol, the magnetic stirring speed is 1500rpm, the stirring time is 1h, and the dissolution temperature is 70°C to obtain the precursor solution A. Use acetone to ultrasonically clean the 300 μm thick p-type silicon with a 100nm-thick silicon dioxide dielectric layer on the upper surface to remove organic dirt on the substrate and dielectric layer, then use alcohol to clean the substrate to remove the acetone on the surface, and finally use deionization Rinse with water and blow dry with nitrogen gun. Paste two pieces of adhesive tape on the surface of the substrate as a masking layer, exposing the strip-shaped area. Take 0.1 mL of precursor solution A, spin-coat on the upper surface of the substrate dielectric layer, soak for 60 s, and then spin-coat at 3000 rpm for 30 s. Then dry at 90°C for 1 min. Then, AZ5214 photoresist was spin-coated on the surface of the sample, and a suitable m...

Embodiment 2

[0094] Dissolve 200mg of thiourea and 50mg of molybdenum pentachloride in 3.75mL of isopropanol, the magnetic stirring speed is 1500rpm, the stirring time is 1h, and the dissolution temperature is 70°C to obtain the precursor solution A. Use acetone to ultrasonically clean the 300 μm thick p-type silicon with a 100nm-thick silicon dioxide dielectric layer on the upper surface to remove organic dirt on the substrate and dielectric layer, then use alcohol to clean the substrate to remove the acetone on the surface, and finally use deionization Rinse with water and blow dry with nitrogen gun. Paste two pieces of adhesive tape on the surface of the substrate as a masking layer, exposing the strip-shaped area. Take 0.1 mL of precursor solution A, spin-coat on the upper surface of the base dielectric layer, soak for 30 s, and then spin-coat at 1500 rpm for 60 s. Then dry at 90°C for 2min. Then, AZ5214 photoresist was spin-coated on the surface of the sample, and a suitable mask wa...

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Abstract

The invention discloses a BJT based on a two-dimensional transition metal chalcogenide and a preparation method thereof, and belongs to the field of semiconductor micro devices. The BJT comprises a monocrystalline silicon substrate with a dielectric layer, and a P-type film, an N-type film and a P-type film which are sequentially and transversely connected with the same two-dimensional transition metal chalcogenide on the surface of the dielectric layer, and electrodes positioned on the upper surfaces of the films. The preparation method comprises the following steps: preparing a shielding layer on the upper surface of a monocrystalline silicon substrate with a dielectric layer, and spin-coating a first precursor solution containing a sulfur element and a transition metal element; spin-coating photoresist on the upper surface of the obtained sample, then removing the shielding layer, spin-coating a second precursor solution formed by dissolving metal salt in the first precursor solution on the upper surface, and removing the photoresist; performing laser irradiation on the obtained sample in vacuum; and preparing a metal electrode on the upper surface of the sample to obtain the BJT. The preparation and doping of the film are completed in one step, and the problems that the film is easy to damage and the performance of the device is influenced in the existing preparation process of the two-dimensional material BJT are solved.

Description

technical field [0001] The invention belongs to the field of semiconductor micro-devices, and more specifically relates to a BJT based on a two-dimensional transition metal chalcogenide and a preparation method thereof. Background technique [0002] Two-dimensional transition metal dichalcogenides (TMDCs) have extremely high electron mobility, and also have excellent properties in optics, electricity, chemistry, mechanics, mechanics, etc., so they have attracted much attention in recent years. , the crystal structure and atomic structure of transition metal chalcogenides are similar, and their performance in semiconductors is also similar. For example, the band gap of layered transition metal chalcogenides changes with the number of layers. MoS 2 For example, its bandgap (1.25eV-1.8eV) varies with the number of layers. MoS 2 With high carrier mobility, the current monolayer MoS 2 The carrier mobility of the film can reach 400cm 2 V -1 the s -1 , multi-layer film up to ...

Claims

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Application Information

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IPC IPC(8): H01L29/735H01L29/73H01L29/24H01L21/331
CPCH01L29/66969H01L29/7317H01L29/735H01L29/24
Inventor 曾祥斌王君豪胡一说王文照陆晶晶王曦雅周宇飞王士博肖永红陈铎张茂发
Owner HUAZHONG UNIV OF SCI & TECH
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