A large-size ultra-thin high-precision lithium niobate wafer edge processing method
A technology of edge processing and lithium niobate, applied in metal processing equipment, chemical instruments and methods, and machine tools suitable for grinding the edge of workpieces, etc., can solve the problem of high difficulty in wafer processing, affecting the grinding and polishing process, and low processing efficiency etc. to achieve good lubrication and cooling effects, improve explosive edge chipping, and improve processing quality
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Embodiment 1
[0039]a) Put the lithium niobate wafer into the edge chamfering machine, use the 800# R-type metal grinding wheel to process the edge of the wafer for the first time, and use the 1500# R-type metal grinding wheel to process the second wafer with a removal amount of 0.15mm Edge processing, the removal amount is 0.05mm to obtain R-type lithium niobate wafers;
[0040] b) Place the chamfered lithium niobate wafer in a sealed container filled with a uniform mixed solution of nitric acid and hydrofluoric acid for chemical etching. The etching temperature is 20°C and the etching time is 2 hours to obtain niobium with sufficient edge stress removed. Lithium oxide wafer;
[0041] c) Put the corroded lithium niobate wafer 1 on the edge polishing fixture 4, put a piece of 0.5mm thick cork paper 2 on the wafer 1 as a spacer, and then put another wafer 1, repeat this action for stacking, At the same time, the wafer 1 is close to the positioning baffle 3, so that the wafer 1 is kept at th...
Embodiment 2
[0045] a) with embodiment 1;
[0046] B) with embodiment 1;
[0047] c) Place the etched lithium niobate wafer 1 on the edge polishing jig 4, put a piece of 0.3mm thick cork paper 2 on the wafer 1 as a spacer, then put another wafer 1, and repeat this action for stacking, At the same time, the wafer 1 is close to the positioning baffle 3, so that the wafer 1 is kept at the same central position. After the wafers are stacked, the wafer is fixed with a force of 3 kg to obtain a lithium niobate wafer to be roughly polished. For details, see figure 2 ;
[0048] D) with embodiment 1;
[0049] e) Same as in Example 1, obtain a lithium niobate wafer with edge polishing, diameter 200.02mm, roundness 0.01mm, edge finish 0.85nm, input 150 pieces, output 146 pieces, fragmentation 4 pieces, yield 97.33 %.
Embodiment 3
[0051] a) with embodiment 1;
[0052] B) with embodiment 1;
[0053] c) Put the etched lithium niobate wafer 1 on the edge polishing fixture 4, put a piece of 1mm thick cork paper 2 on the wafer 1 as a spacer, then put another wafer 1, repeat this action to stack the wafers, and at the same time The wafer 1 is close to the positioning baffle 3, so that the wafer 1 is kept at the same central position. After the wafers are stacked, the wafer is fixed with a force of 3 kg to obtain a lithium niobate wafer to be roughly polished. For details, see figure 2 ;
[0054] D) with embodiment 1;
[0055] e) Same as in Example 1, obtain a lithium niobate wafer with edge polishing, diameter 200.00mm, roundness 0.06mm, edge finish 0.83nm, input 92 pieces, output 88 pieces, fragmentation 1 piece, missing corner 3 Chips, the yield rate is 95.65%;
[0056] Comparative example 1,2,3, as table 1 and Figure 4 As shown, the thicker the tipping paper, the larger the gap between wafers, the m...
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