High-purity quartziferous silicon core for improving energy efficiency of polycrystalline silicon reduction furnace

A technology of quartz and reduction furnace, which is applied in the fields of silicon compound, inorganic chemistry, chemical industry, etc., can solve the problems affecting the purity and quality of polysilicon, high cost of environmental protection treatment, low cutting efficiency, etc. The effect of high efficiency and low material consumption

Pending Publication Date: 2021-12-21
KUNMING UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The first stage uses molybdenum wire or tantalum tube. Although it is simple and convenient, the diffusion of metal atoms at high temperature seriously affects the purity and quality of polysilicon; the second stage is the zone melting silicon core furnace to draw round silicon cores. With the help of the negative resistance effect that the resistance of polysilicon semiconductor decreases with the increase of temperature, the silicon core becomes a heat carrier under the condition of heating or high voltage breakdown, and then grows polysilicon by chemical vapor deposition in the reduction furnace, and the quality of the produced polysilicon is significantly improved; the third The first stage is wire-cutting square silicon cores. This method uses a special silicon core cutting machine to cut high-purity polycrystalline silicon rods or single crystal silicon rods into thin rectangular silicon cores of certain specifications.
In China, silicon rods are generally drawn by the Czochralski method, and then cut into silicon rods to obtain cut silicon cores. The production efficiency of this method is higher than that of round silicon cores drawn by zone melting silicon core furnaces, but after drawing cut silicon rods, it is necessary to use Special diamond wire cutting machine tool for cutting, low cutting efficiency, large loss during silicon material cutting, organic lubricant needs to be added to cutting cooling water, high cost of environmental protection treatment

Method used

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  • High-purity quartziferous silicon core for improving energy efficiency of polycrystalline silicon reduction furnace
  • High-purity quartziferous silicon core for improving energy efficiency of polycrystalline silicon reduction furnace
  • High-purity quartziferous silicon core for improving energy efficiency of polycrystalline silicon reduction furnace

Examples

Experimental program
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Effect test

Embodiment 1

[0026] Example 1: In a CVD reactor for the manufacture of polysilicon, a high-purity quartz tubular hollow silicon core was used instead of a conventional solid silicon core. Using high-purity crystalline quartz with a purity of more than 99.99% as a raw material, it is prepared by a colloid treatment method, and the specific steps are as follows:

[0027] (1) Grind the unprocessed high-purity crystalline quartz with a purity of more than 99.99% to a particle size of 50 nm to 300 μm, and then disperse the ground quartz particles into a colloidal solution;

[0028] (2) The quartz particles dispersed in the colloidal solution are then molded into hollow tubular silicon core profiles, which are then dried, sintered and annealed;

[0029] (3) The processed silicon core profile is subjected to mechanical processing or structural modification to obtain a high-purity quartz silicon core.

[0030] The prepared hollow tubular silicon core as figure 1 As shown, its shape is hollow tub...

Embodiment 2

[0032] Example 2: The silicon core and the preparation method of this example are the same as those of Example 1, the difference is that the inner temperature of the inner and outer ring silicon rods of the comparative tubular silicon core in this example is the same deposition thickness and different initial radius of the hollow tube. distribution, as attached Figure 4 , 5 shown. Under the condition that the deposition thickness is all 60 mm, the tubular silicon cores with initial radii of hollow tubes of 10 mm, 20 mm, 30 mm and 40 mm are compared with the internal temperature gradient of the tubular silicon rods. When the initial radius of the hollow tube is 40 mm, its internal temperature gradient is the smallest. Therefore, under the same deposition thickness, the internal temperature gradient of the large-diameter high-purity quartz tubular silicon core is smaller, and the silicon core is not easily melted and the risk of rod downfall occurs.

Embodiment 3

[0033] Example 3: The silicon core and preparation method of this example are the same as those of Example 1, except that this example compares the energy consumption per kilogram of polysilicon products of traditional solid silicon cores and high-purity quartz tubular silicon cores with different initial radii, as attached Image 6 shown. Using the traditional solid silicon core, the final deposition radius of the silicon rod is 7 cm due to the limitation of the internal temperature gradient of the silicon rod. Using high-purity quartz tubular silicon core, the final deposition radius can reach 7 cm. Comparing the energy consumption per kilogram of polysilicon products of traditional solid silicon cores and high-purity quartz tubular silicon cores with different initial radii, it can be found that the energy consumption per unit polysilicon product of traditional solid silicon cores is 55.1 kWh / kg, and the initial radius is 20 The energy consumption per unit polysilicon pro...

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Abstract

The invention discloses a high-purity quartziferous silicon core for improving energy efficiency of a polycrystalline silicon reduction furnace, the silicon core is arranged to be of a hollow structure and is made of a high-purity quartziferous material, the high-purity quartziferous silicon core is a hollow silicon core, and the high-purity quartziferous silicon core replaces an original solid silicon core in the polycrystalline silicon reduction furnace. The high-purity quartziferous silicon core is prepared by taking high-purity crystal quartz with the purity of 99.99% or above as a raw material and using a colloid treatment method; the defects that a traditional solid silicon core is small in diameter and limited in deposition area can be effectively overcome, the chemical vapor deposition speed of polycrystalline silicon is greatly increased, and the energy efficiency of a polycrystalline silicon reduction furnace is improved.

Description

technical field [0001] The invention relates to a high-purity quartz silicon core for improving the energy efficiency of a polysilicon reduction furnace, and belongs to the technical field of polysilicon production. Background technique [0002] At present, the main method of producing polysilicon in the world is the improved Siemens method, which accounts for 70% of the world's total output. As my country incorporates carbon peaking and carbon neutrality into the overall layout of ecological civilization construction, higher requirements are put forward for "energy saving and consumption reduction" in the industrial field. Therefore, improving the energy efficiency of the polysilicon reduction furnace is the key to improving the competitiveness of the improved Siemens process polysilicon production. The principle of the improved Siemens polysilicon process is to use chemical vapor deposition (CVD) technology to reduce high-purity trichlorosilane with high-purity hydrogen o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/035C04B35/14C04B35/622
CPCC01B33/035C04B35/14C04B35/622C04B2235/5454C04B2235/5445C04B2235/5436C04B2235/5427Y02P20/10
Inventor 聂陟枫王亚君王晨郭崎均宋玉敏郭婷婷王海谢刚
Owner KUNMING UNIV
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