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Film-forming composition

A composition and compound technology, which is applied in the direction of photosensitive materials, instruments, and opto-mechanical equipment for opto-mechanical equipment, can solve problems such as difficulty in obtaining resist pattern film thickness, and achieve the effect of high transferability

Pending Publication Date: 2022-01-04
NISSAN CHEM IND LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, it is difficult to obtain a resist pattern film thickness sufficient for substrate processing, and it is necessary to make not only the resist pattern but also the resist underlayer film formed between the resist and the semiconductor substrate to be processed. Functional process of mask during substrate processing

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0330] Hereinafter, the present invention will be described more specifically with reference to synthesis examples and examples, but the present invention is not limited to the following.

[0331] [1] Synthesis of polymer (hydrolysis condensate)

Synthetic example 1

[0333] Add 25.6g of tetraethoxysilane, 7.82g of methyltriethoxysilane, 1.91g of cyanoethyltriethoxysilane, and 53.0g of acetone into a 300ml flask, while stirring the mixed solution using an electromagnetic stirrer. While stirring, 11.7 g of a 0.01 M nitric acid aqueous solution was added dropwise.

[0334] After the dropwise addition, the flask was transferred to an oil bath adjusted to 85° C., and refluxed for 240 minutes. Then, 70 g of propylene glycol monomethyl ether acetate was added, and acetone, ethanol and water which were reaction by-products were distilled off under reduced pressure, and concentrated to obtain an aqueous solution of a hydrolysis-condensation product (polymer).

[0335] Further, propylene glycol monomethyl ether acetate was added, and the concentration was adjusted so that the solvent ratio of 100% of propylene glycol monomethyl ether acetate became 20% by mass in terms of solid residue at 140°C. The obtained polymer corresponds to the formula (E1),...

Synthetic example 2

[0338] Add 24.5g of tetraethoxysilane, 11.0g of cyanoethyltriethoxysilane, and 53.3g of acetone into a 300ml flask, and add 11.2 g of 0.01M nitric acid aqueous solution dropwise while stirring the mixed solution with an electromagnetic stirrer. g.

[0339] After the dropwise addition, the flask was transferred to an oil bath adjusted to 85° C., and refluxed for 240 minutes. Thereafter, 72 g of propylene glycol monomethyl ether acetate was added, and acetone, ethanol and water which were reaction by-products were distilled off under reduced pressure, and concentrated to obtain a hydrolysis-condensation product (polymer) aqueous solution.

[0340] Further, propylene glycol monomethyl ether acetate was added, and the concentration was adjusted so that the solvent ratio of 100% of propylene glycol monomethyl ether acetate became 20% by mass in terms of solid residue at 140°C. The obtained polymer corresponds to the formula (E2), and its weight average molecular weight is Mw1,300 ...

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Abstract

To provide a film-forming composition that is suitable as a resist underlayer film-forming composition capable of forming a resist underlayer film with both good adhesion to an EUV resist and good etchability. A film-forming composition including a solvent and at least one type of substance selected from a hydrolyzable silane compound, a hydrolysate thereof, and a hydrolysis condensate thereof, wherein the film-forming composition is characterized in that the hydrolyzable silane compound includes a hydrolyzable silane expressed by formula (1), which has an intramolecular cyano group. (In formula (1), R1 is a group bonding to a silicon atom, and represents an organic group including a cyano group, each R2 is a group bonding to a silicon atom by Si-C bonding, and independently represents a substitutable alkyl group or similar, each R3 is a group or atom bonding to a silicon atom, and independently represents a hydroxy group, an alkoxy group, an aralkyloxy group, an acyloxy group, or a halogen atom, a represents the integer 1, b represents an integer from 0 to 2, and a+b represents an integer from 1 to 3.) R1aR2bSi(R3)4-(a+b) (1).

Description

technical field [0001] The present invention relates to a film-forming composition. Background technique [0002] In the field of manufacturing semiconductor devices, a technique of forming a fine pattern on a substrate, etching according to the pattern, and processing the substrate is widely used. [0003] Micropatterning has progressed with the development of photolithography technology, and exposure techniques using KrF excimer laser and ArF excimer laser, electron beams, and EUV (Extreme Ultra Violet: extreme ultraviolet) have been studied. [0004] In microfabrication using photolithography using photoresists, a thin film of photoresist is formed on a semiconductor substrate such as a silicon wafer, and ultraviolet rays are irradiated thereon through a mask pattern in which a pattern of a semiconductor device is drawn. Wait for active light to develop, and use the obtained resist pattern as a protective film to etch the substrate to form fine unevenness corresponding t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08G77/26G03F7/11C09D5/00C08L83/04C09D183/06C09D183/08
CPCC08G77/26C09D5/00C09D183/06C09D183/08G03F7/0752C08G77/06C08G77/20C08G77/28C08G77/80C09D183/04G03F7/0755G03F7/091G03F7/2004C08L83/08G03F7/11H01L21/0274
Inventor 柴山亘武田谕志垣修平石桥谦加藤宏大中岛诚
Owner NISSAN CHEM IND LTD