Unlock instant, AI-driven research and patent intelligence for your innovation.

High-dielectric compound and preparation method thereof, epoxy high-dielectric material and preparation method thereof, and semiconductor device

A high-dielectric material and compound technology, which is applied in the fields of epoxy high-dielectric material and its preparation, semiconductor device, high-dielectric compound and its preparation, can solve the problem of reduced service life of materials, increased leakage current and low dielectric constant and other problems, to achieve the effect of prolonging the service life, improving the leakage current and high dielectric constant

Active Publication Date: 2022-01-28
SHENZHEN INST OF ADVANCED TECH CHINESE ACAD OF SCI
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The current polymer-based materials have some defects, such as low dielectric constant, and the leakage current increases after the material is worn out during use, and the service life of the material is greatly reduced

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High-dielectric compound and preparation method thereof, epoxy high-dielectric material and preparation method thereof, and semiconductor device
  • High-dielectric compound and preparation method thereof, epoxy high-dielectric material and preparation method thereof, and semiconductor device
  • High-dielectric compound and preparation method thereof, epoxy high-dielectric material and preparation method thereof, and semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0040] Based on the same inventive concept, the embodiment of the present application also provides a method for preparing the above-mentioned high dielectric compound, including the following steps:

[0041] S1, performing nucleophilic addition reaction of anthrone and N-Boc-3-aminopropyl bromide, and then obtaining the first product after de-Boc reaction;

[0042] S2. Adding the first product to the compound corresponding to R to obtain a high dielectric compound;

[0043] Among them, the chemical formula of the first product is

[0044] If R is Then the compound corresponding to R is bis(vinylsulfonyl)methane;

[0045] If R is Then the compound corresponding to R is divinyl sulfone;

[0046] If R is Then the compound corresponding to R is bis(vinylsulfonyl)ethane.

[0047] In the above examples, in step S1, anthrone and N-Boc-3-aminopropyl bromide undergo nucleophilic addition reaction to generate The chemical structure of bis(vinylsulfonyl)methane is (record...

Embodiment 1

[0067] The embodiment of the present application provides a method for preparing a high dielectric compound, comprising the following steps:

[0068] S1. Add 2.63g of anthrone, 1.66g of KOH, and 3.868g of N-Boc-3-aminopropyl bromide into a 50ml three-necked flask, then add 25ml of dehydrated tetrahydrofuran (THF), reflux at 64°C for 20h, and filter , the filtrate was rotary evaporated, washed with deionized water, and vacuum-dried to obtain the nucleophilic addition product Boc-APA;

[0069] S2. Dissolve the Boc-APA obtained in S1 with 20ml of dichloromethane, add 20ml of 1M methanolic hydrochloric acid solution under ice bath conditions, stir at room temperature for 10h, add Na 2 CO 3 Adjust the pH of the aqueous solution to neutral, wash with distilled water, and spin dry to obtain the first product APA;

[0070] S3. Add 2.82g of the first product APA and 0.98g of bis(vinylsulfonyl)methane in S2 to 36g of toluene, and reflux at 64°C for 8h. After the reaction, pour into 40...

Embodiment 2

[0073] The embodiment of the present application provides a method for preparing an epoxy high dielectric material, comprising the following steps:

[0074] Weigh 1g of the first product APA prepared in Example 1, 0.3g of the high dielectric compound BA-BVSM prepared in Example 1, and 0.81g of 1,4-butanediol diglycidyl ether, mix well, The epoxy high dielectric material can be obtained by photocuring and crosslinking under 365nm ultraviolet light; among them, the light intensity is 8.4mW / cm 2 , Lighting time is 5min.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
wavelengthaaaaaaaaaa
Login to View More

Abstract

The invention provides a high-dielectric compound and a preparation method thereof, an epoxy high-dielectric material and a preparation method thereof, and a semiconductor device. The chemical formula of the high-dielectric compound is shown in the description, wherein R is one of the three structures shown in the description. According to the preparation method of the epoxy high-dielectric material, the high-dielectric compound is used as a photo-crosslinking agent, and the high-dielectric compound is a functional molecule modified by bis (vinyl sulfonyl) methane and the like with a high-dipole-distance group, so that the dielectric constant can be improved, and meanwhile, the epoxy high-dielectric material can have photo-controllable self-repairing capability, and the service life of the material is prolonged. The epoxy high-dielectric material obtained by the invention obtains high capacitance due to high dielectric constant, and the leakage current can be obviously improved without changing the electrical thickness.

Description

technical field [0001] The invention relates to the technical field of epoxy dielectric materials, in particular to a high dielectric compound and a preparation method thereof, an epoxy high dielectric material and a preparation method thereof, and a semiconductor device. Background technique [0002] With the increasing degree of electronic integration, the feature size of semiconductor devices is also decreasing. Traditional SiO 2 When the gate dielectric is thinned to 2nm, the gate leakage current will increase sharply, and the performance of the device will be greatly affected. Therefore, in order to meet the development requirements and the long-term development of CMOS technology, we need to seek alternatives to SiO 2 new gate dielectric material. In this way, the tunneling current of the device is reduced and the reliability of the CMOS technology is increased. In recent years, some high-k gate dielectric thin film materials have attracted extensive attention from ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C07C317/28C07C315/04C08G59/50C08G59/22C08G59/24C08J3/28C09D163/00H01L29/51C08L63/00
CPCC07C317/28C08G59/504C08G59/22C08G59/245C08J3/28C09D163/00H01L29/51C08J2363/00
Inventor 刘捷李倩倩于淑会孙蓉
Owner SHENZHEN INST OF ADVANCED TECH CHINESE ACAD OF SCI