Preparation method of PDMS in-situ wrinkled antireflection film and monochromatic light organic light emitting diode

A technology of light-emitting diodes and anti-reflection coatings, which is applied in the manufacture of semiconductor/solid-state devices, electrical components, and electrical solid-state devices. Light extraction efficiency and final external quantum efficiency, the effects of a wide range of options

Pending Publication Date: 2022-03-18
SHANGHAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Among them, the tensile method requires mechanical assistance, and the stress is generally large, so it can only obtain general macroscopic wrinkles; the wrinkles prepared by the solvent-induced method are very sensitive to the diffusion behavior of the solvent, and have high environmental requirements, so it is difficult to prepare in large areas; stencil printing The wrinkle replica similar to the master can be obtained by the method, but there are relatively cumbersome processes such as the demoulding of the master and the preparation of the master in advance; although the wrinkle size obtained by the laser direct writing method is smaller and adjustable, the equipment used is expensive High, increasing the preparation cost, which has become a technical problem to be solved urgently

Method used

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  • Preparation method of PDMS in-situ wrinkled antireflection film and monochromatic light organic light emitting diode
  • Preparation method of PDMS in-situ wrinkled antireflection film and monochromatic light organic light emitting diode
  • Preparation method of PDMS in-situ wrinkled antireflection film and monochromatic light organic light emitting diode

Examples

Experimental program
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Effect test

Embodiment 1

[0055] In this example,

[0056] see figure 1 and figure 2 , a method for preparing a PDMS in-situ wrinkled anti-reflection film and a monochromatic organic light-emitting diode, comprising the steps of:

[0057] Step 100: According to the ratio of the mass ratio of PDMS prepolymer and PDMS crosslinking agent to 10:1, weigh 3.3 g of PDMS prepolymer and PDMS crosslinking agent, add them into clean transparent reagent bottles, and take 0.5 g respectively mL, 1.0mL and 1.5mL of chloroform were mixed with PDMS solution;

[0058] Step 101: Stir evenly, seal, and place the mixed solution in a moderate vacuum environment for degassing for 1 hour;

[0059] Step 102: After heating the deionized water to boiling, the generated steam is introduced into the spin coater so that the humidity in the airtight environment reaches a dynamic balance, and the relative humidity is controlled to be 75%;

[0060] Step 103: After ultrasonically cleaning the ITO glass substrate with detergent, ac...

Embodiment 2

[0069] This embodiment is basically the same as Embodiment 1, especially in that:

[0070] In this embodiment, a method for preparing a PDMS in-situ wrinkled anti-reflection film and a monochromatic organic light-emitting diode includes the following steps:

[0071] Step 100: According to the ratio of the mass ratio of PDMS prepolymer and PDMS crosslinking agent to 10:1, weigh 3.3g of PDMS prepolymer and PDMS crosslinking agent, add it to a clean transparent reagent bottle, and take 1.0mL Chloroform is mixed with PDMS solution;

[0072] Step 101~step 200: this step is the same as that of Embodiment 1;

[0073] Step 201: Place the conductive side of the substrate in step 200 down in a vacuum evaporation chamber to sequentially evaporate various functional layers, including MoO 3 (5nm) / NPB(35nm) / mCP(5nm) / DMAC-DPS:DPEPO(10wt%, 20nm) / DPEPO(10nm) / Bphen(40nm) / LiF(0.8nm);

[0074] Step 202: Finally, replace the mask to vapor-deposit cathode metal Al to prepare an electrode cathode...

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Abstract

The invention discloses a PDMS in-situ wrinkle antireflection film and a preparation method of a monochromatic light organic light-emitting diode, based on a self-assembly physical and chemical process of a spirogram of water vapor on the surface of a PDMS polymer, and in combination with compression stress generated by spin coating, an epidermis layer of the PDMS film is destabilized to generate a wrinkle structure in a synergistic manner. Water molecules serve as a mother set in a traditional method, the mother set is automatically removed after water vapor is evaporated and dried, and a wrinkle unit structure is obtained. And the wrinkle size is regulated and controlled by utilizing the conditions such as humidity, spin-coating speed, solvent type and dosage of a diluted solution and the like. And performing vacuum evaporation of a functional layer on the conductive side of the substrate containing the wrinkle antireflection film to construct a red, green or blue light OLED device. The method is a simple and efficient in-situ anti-reflection method. Compared with the prior art, the preparation method of the OLED wrinkle antireflection film provided by the invention has the characteristics of simple process, low cost, adjustable size and the like, so that the emergent light of a red, green or blue light OLED applying the PDMS wrinkle antireflection film is obviously enhanced.

Description

technical field [0001] The invention relates to the technical field of nano-processing and light-emitting diode preparation, in particular to a method for preparing a PDMS in-situ wrinkled anti-reflection film and a monochromatic organic light-emitting diode. Background technique [0002] Organic light-emitting diodes (organic light-emitting diodes, OLEDs) have shown great application potential in the fields of full-color flat panel displays and solid-state lighting due to their advantages such as self-illumination, wide viewing angle, rich colors, and low-voltage DC drive. Although the internal quantum efficiency of OLED is almost close to 100%, due to the light loss caused by waveguide mode, substrate mode and plasmon mode, about 80% of the photons emitted by the organic light-emitting layer are confined inside the device, and only about 20% of the photons The external quantum efficiency is greatly lower than the internal quantum efficiency, so enhancing OLED light extract...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/56H01L51/52
CPCH10K50/858H10K71/00
Inventor 郑燕琼李维光陈与欢陈俊聪陈维安
Owner SHANGHAI UNIV
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