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Photosensitive resin and photoresist composition using same

A photosensitive resin and photoresist technology, applied in the photoresist field, can solve the problem of increasing the difficulty of photoresist formulation, and achieve the effects of well controlling the photoacid diffusion performance, reducing the leaching rate and improving the resolution

Active Publication Date: 2022-04-01
NINGBO NATA OPTO ELECTRONICS MATERIAL CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, after the photosensitizer molecules are grafted, the film-forming resin should not only bear the effect of the photosensitizer, but also play the role of the film-forming resin, which greatly increases the difficulty of developing photoresist formulations.
At the same time, after the cationic part of the photosensitizer is polymerized, the problem of acid diffusion control of the anionic part still exists.

Method used

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  • Photosensitive resin and photoresist composition using same
  • Photosensitive resin and photoresist composition using same
  • Photosensitive resin and photoresist composition using same

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preparation example Construction

[0086] On the other hand, based on the above-mentioned photosensitive resin, the embodiment of the present invention also provides a preparation method of the above-mentioned photosensitive resin. The preparation method technological process of this photosensitive resin is as follows figure 1 As shown, it includes the following steps:

[0087] S01: Prepare a mixed solution containing photosensitive functional monomers and modified functional monomers,

[0088] Specifically, dissolving monomers containing modified functional units and monomers containing photosensitive functional units in the first solvent to obtain a mixed solution containing photosensitive resin monomers;

[0089] S02: prepare initiator solution,

[0090] Specifically, the initiator is dissolved in a second solvent to obtain an initiator solution;

[0091] S03: Mix the mixed solution with the initiator solution to carry out the polymerization reaction,

[0092] Specifically, the above-mentioned initiator ...

Embodiment 1-1

[0129] This embodiment provides a kind of preparation method of photosensitive resin, and reaction formula is as follows:

[0130]

[0131] The steps of photosensitive resin preparation method are as follows:

[0132] (1) Put 20g of monomer A and 20g of monomer B into a reactor filled with nitrogen, add 60g of the first ethyl acetate into the reactor, stir evenly, raise the temperature of the reactor to 77°C, and then add Add a mixture of 10 g of the second ethyl acetate and 4 g of benzoyl peroxide dropwise for 10 minutes, react at 77° C. for 7 hours, stop the reaction, and cool the reaction kettle to room temperature;

[0133] (2) Add 600g of the first methanol to the reaction kettle cooled to room temperature in step (1), and after 1 hour of precipitation, export the liquid in the reaction kettle, then add 70g of the third ethyl acetate to the reaction kettle until the precipitation dissolves;

[0134](3) add 600g second methanol in the reactor of step (2), repeat the op...

Embodiment 1-2

[0136] This embodiment provides a kind of preparation method of photosensitive resin, and reaction formula is as follows:

[0137]

[0138] The steps of the preparation method of the photosensitive resin are as follows:

[0139] (1) Add 10g of monomer A, 20g of monomer B, and 10g of monomer C into a reactor filled with nitrogen, add 60g of the first ethyl acetate into the reactor, and stir the reactor to 77 ℃, then drop the mixed solution of the second ethyl acetate 10g and 4g benzoyl peroxide in the described reaction kettle, the time of dropping is 10min, react at 77 ℃ for 7 hours, stop the reaction, the temperature of the described reaction kettle Cool to room temperature;

[0140] (2) Add 600g of the first methyl alcohol to the reaction kettle cooled to room temperature in step (1), after 1h of precipitation, derive the liquid in the described reaction kettle, then add the 3rd ethyl acetate of 70g in the described reaction kettle until the precipitate dissolves;

[0...

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Abstract

The invention discloses a photosensitive resin and a photoresist composition using the photosensitive resin. The photosensitive resin comprises a resin type photosensitive anion and a sulfonium salt cation, the structural formula of the resin type photosensitive anion is the structural formula of the sulfonium salt cation, and R1 and R2 are H or methyl; r3 is a modified structure; r4, R5 and R6 are one or more of alkyl, aryl or substituent groups containing sulfur / oxygen / nitrogen heteroatoms, wherein the number of hydrogen atoms is an integer of 1-40, and the number of carbon atoms is an integer of 1-20; n is an integer between 2 and 200, and R7 is one or more of alkyl, aryl or functional structures containing sulfur / oxygen / nitrogen heteroatoms. When the photosensitive resin disclosed by the invention is applied to the photoresist composition, the film forming capability of the photoresist composition can be improved, a photoetching pattern can be improved, the resolution of the photoresist can be improved, and the line width roughness can be reduced, so that the photoresist composition can be applied to the photoetching technology of a large-scale integrated circuit.

Description

technical field [0001] The invention belongs to the technical field of photoresist, in particular to a photosensitive resin and a photoresist composition using the photosensitive resin. Background technique [0002] Photoresist composition is one of the key materials in the field of integrated circuit manufacturing, and its main component is a light-sensitive mixed liquid composed of film-forming resin, photosensitizer, acid inhibitor and solvent. Under the irradiation of ultraviolet light, deep ultraviolet light, electron beam, ion beam and other light or radiation, the solubility of the components changes, and after being treated with an appropriate developer, the soluble part is dissolved to obtain the final desired photoresist image. With the continuous development of manufacturing technology, the technical requirements for photoresist are getting higher and higher. In order to meet the increasingly stringent process conditions, it is necessary to develop photoresist pro...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08F220/18C08F220/38C08F220/20G03F7/004
Inventor 顾大公余绍山齐国强毛智彪许从应许东升方涛陈玲
Owner NINGBO NATA OPTO ELECTRONICS MATERIAL CO LTD
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