MPCVD equipment capable of realizing effective doping
A technology of equipment and pipelines, applied in the field of plasma chemical vapor deposition, can solve the problems such as the exploration, research and application realization of in-situ doping technology that restricts MPCVD, less attention to MPCVD research, impurity memory effect and contamination, etc. Doping contamination and memory effect, or the effect of overcoming doping contamination and memory effect and improving utilization
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Embodiment 1, second road gas transmission ring 4 are positioned at the annular gas transmission structure of support center
The influence of the formation of the body sphere 2 is reduced to a controllable range, a suitable structure is processed under the substrate support 5, and the second doping gas is mixed with the buffer.
The ring structure, that is, the gas transmission ring, can be made of stainless steel or metal molybdenum, or quartz suitable for microwave environments.
The influence of the formation of the body sphere 2 is reduced to a controllable range, a suitable structure is processed under the substrate support 5, and the second doping gas is mixed with the buffer.
The size of the jetting angle of the jetting hole on the above-mentioned circular ring structure is between 15 degrees and ‑15 degrees, so as to be conducive to controlling jetting
The situation of the distribution of the jet holes on the above-mentioned circular ring structure is evenly distrib...
Example Embodiment
Embodiment 2, the second road gas transmission ring 4 are positioned around the support, and keep the structure of a certain distance with the support
A circular ring is fixed around the substrate support, and its diameter is more than 6cm, and is suitable with the edge of the substrate support
The design and optimization of the second gas flow introduction structure that is fully compatible with the microwave coupling resonator is solved, and the reaction gas
is a metal such as stainless steel or molybdenum, as shown in Figure 3.
[0045] The height difference between the air jet holes on the above-mentioned circular ring structure and the support plane is between 0.5 centimeters to -0.5 centimeters,
The size of the jetting angle of the jetting hole on the above-mentioned circular ring structure is between 15 degrees and ‑15 degrees, so as to be conducive to controlling jetting
The situation of the distribution of the jet holes on the above-mentioned circular ring struct...
Example Embodiment
Embodiment 3, the second road gas transmission ring 4 are positioned around the support, and are in close contact with the structure of the support
A circular ring is fixed around the substrate support, and is kept in close contact with the edge of the substrate support to ensure that it is resistant to microwaves
The ring structure, that is, the gas transmission ring, can be made of stainless steel or metal molybdenum, or quartz suitable for microwave environments.
[0058] The height difference between the air jet holes on the above-mentioned circular ring structure and the support plane is between 0.5 centimeters to -0.5 centimeters,
The size of the jetting angle of the jetting hole on the above-mentioned circular ring structure is between 15 degrees and ‑15 degrees, so as to be conducive to controlling jetting
The situation of the distribution of the jet holes on the above-mentioned circular ring structure is evenly distributed along the circular ring with an angle, and...
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