Preparation method of noble metal sensitized nano-porous SnO2-based gas sensitive material

A nanoporous, gas-sensitive material technology, applied in metal processing equipment, nanotechnology for sensing, nanotechnology for materials and surface science, etc. High synthesis cost and other problems, to achieve the effect of easy industrial production, low requirements for synthesis conditions, and thorough reaction

Pending Publication Date: 2022-07-15
上海复感科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Although it has been reported that nanoporous SnO 2 synthesis, but due to the common SnO 2 Precursors such as SnCl 4 , SnCl 2 The hydrolytic polymerization rate of the mesoporous SnO is relatively fast, and it is usually necessary to use a large amount of organic solvents and acid-base catalysts to regulate the hydrolytic polymerization process of the metal oxide precursor, and strictly control the synthesis conditions such as ambient humidity, reaction temperature, and hydrol

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] This example provides a Pt-sensitized nanoporous SnO 2 The preparation method of gas sensitive material comprises the following steps:

[0037] Step S1, 200mg SnCl 4 and 0.5ml concentration is 2mg·L -1 The chloroplatinic acid solution was added to 1 g of ethylene glycol solvent and stirred for 5 min to form a uniform first mixed solution;

[0038] Step S2, adding 40 mg of amphiphilic block copolymer polyethylene oxide-b-polystyrene (PEO-b-PS, Mn≈25000) and 40 mg of concentrated hydrochloric acid solution into the first mixed solution, stirring 1h to obtain the second mixed solution;

[0039] In step S3, the second mixed solution is transferred to a petri dish, and placed at 25°C to volatilize the solvent. After 10 hours, it is transferred to an oven at 100°C and cured for 10 hours to obtain a uniform and transparent film. The film is scraped from the petri dish and ground to obtain the first powder;

[0040] Step S4, transfer the first powder to the tube furnace, p...

Embodiment 2

[0044] This example provides a Pd-sensitized nanoporous SnO 2 The preparation method of / NiO gas-sensing material includes the following steps:

[0045] Step S1, 200mg SnCl 2 , 200mg NiCl 2 and 1ml concentration is 2mg·L -1 The potassium hexachloropalladate solution was added to 2g of 1,3-propanediol solvent and stirred for 15min to form a uniform first mixed solution;

[0046] In step S2, 100 mg of the amphiphilic triblock copolymer polyethylene oxide-polypropylene oxide-polyethylene oxide (PEO-PPO-PEO, Mn≈15000) and 100 mg of concentrated nitric acid solution were added to the solution of step S1. The first mixed solution was stirred for 1.5 h to obtain the second mixed solution.

[0047] In step S3, the second mixed solution is transferred to a petri dish and placed at 35°C to volatilize the solvent. After 15 hours, the second mixed solution is transferred to an oven at 120°C and cured for 12 hours to obtain a uniform transparent film. Scraping and grinding from the pe...

Embodiment 3

[0052] This example provides an Au-sensitized nanoporous SnO 2 The preparation method of / ZnO gas sensitive material comprises the following steps:

[0053] Step S1, 200mg SnCl 4 , 200mg ZnCl 2 and 2ml concentration is 2mg·L -1 The chloroauric acid solution was added to 4g of 1,4-butanediol solvent and stirred for 20min to form a uniform first mixed solution;

[0054] In step S2, 200 mg of amphiphilic block copolymer polyethylene oxide-b-polymethyl methacrylate (PEO-b-PMMA, Mn≈30000) and 200 mg of concentrated nitric acid solution were added to the first step described in step S1. A mixed solution was stirred for 2 h to obtain a second mixed solution.

[0055] In step S3, the second mixed solution described in step S2 was transferred to a petri dish, and placed at 70 °C to volatilize the solvent. After 24 hours, it was transferred to an oven at 150 °C and cured for 24 hours to obtain a uniform and transparent film. The transparent film is scraped and ground from the petri...

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PUM

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Abstract

The invention provides a preparation method of a noble metal sensitized nano porous SnO2-based gas sensitive material, and belongs to the field of advanced porous nano materials. According to the preparation method, dihydric alcohol is used as a solvent and a metal precursor modifier, and an amphiphilic block copolymer is used as a structure inducer; when the SnO2 precursor and the noble metal precursor are co-assembled by the structure inducer, the dihydric alcohol and the SnO2 precursor are firstly chelated to form a metal chelate, and then the metal chelate and the amphiphilic block copolymer form a reversed-phase composite micelle; when solvent evaporation is carried out after assembly is completed, the reversed-phase composite micelles are further stacked to form a super-molecular assembly, a framework is provided for calcination, and a large-aperture mesoporous channel is formed after the structure inducer is decomposed through calcination, so that the noble metal sensitized nano-porous SnO2-based gas-sensitive material is obtained. The synthesis method disclosed by the invention is low in requirements on synthesis conditions, high in reaction yield and easy for industrial production, and can be applied to development and application of various high-performance gas sensors.

Description

technical field [0001] The invention belongs to the field of advanced porous nanomaterials, in particular to a noble metal sensitized nanoporous SnO 2 Preparation method of base gas-sensing material. Background technique [0002] As a typical n-type semiconductor, tin oxide is a commonly used metal oxide semiconductor gas sensing material with high electron mobility, wide band gap, non-stoichiometry, good thermal stability and other properties. However, single-component SnO 2 When semiconductor gas sensing materials are used for gas sensing, there are problems such as slow response, long recovery time and poor stability. [0003] In the prior art, improving SnO 2 The gas-sensing performance strategy of semiconductor materials includes three directions: one is to modify its components, such as noble metal modification, for example, the Chinese patent publication number CN112225255A discloses an ordered double mesoporous metal oxide loaded with noble metals. Composite mate...

Claims

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Application Information

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IPC IPC(8): C01G19/02B22F1/054B22F9/16G01N27/12B82Y40/00B82Y15/00B82Y30/00
CPCC01G19/02B22F9/16G01N27/12B82Y40/00B82Y15/00B82Y30/00C01P2006/12C01P2006/16C01P2006/14
Inventor 万辉明姜新亮严辉
Owner 上海复感科技有限公司
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