Organic-inorganic hybrid femtosecond laser direct writing photoresist

Abstract

The invention discloses an organic-inorganic hybrid femtosecond laser direct writing photoresist, which is prepared from the following components in percentage by mass: 4 to 6 weight percent of acid A, 2 to 3 weight percent of monomer B, 2 to 3 weight percent of thiol compound C, 0.2 to 1.0 weight percent of photoinitiator D and 87 to 91.8 weight percent of solvent E. Acid A is zirconium-based acrylate or metacrylic acid ester or a mixture of the zirconium-based acrylate and metacrylic acid ester and serves as solid film-forming resin of the femtosecond laser direct-writing photoresist, the photoresist can be solidified after being coated with a film, and therefore diffusion of active species in the processing process is reduced to improve precision and resolution, meanwhile, the mechanical strength of the photoresist is improved, and the service life of the photoresist is prolonged. And the volume shrinkage rate is reduced. The thiol compound C, the acid A and the monomer B can be efficiently and rapidly crosslinked through a mercapto-alkene click reaction to form a network structure. Meanwhile, the thiol compound C has the effect of resisting oxidation and polymerization inhibition, and the femtosecond laser direct writing speed can be efficiently increased.

Description

technical field [0001] The invention relates to the field of femtosecond laser direct writing, and further relates to an organic-inorganic hybrid femtosecond laser direct writing photoresist. Background technique [0002] Femtosecond laser direct writing technology is a new type of nanolithography technology, based on nonlinear two-photon / multi-photon absorption effect, with the ability to achieve sub-hundred nanometer micro-nano processing. In addition, the femtosecond laser direct writing technology does not need a mask, and can directly write in the photoresist to realize the micro-nano processing of any 2D and 3D structures. Applications. [0003] Photoresist is the medium and carrier of femtosecond laser direct writing, which affects the precision and quality of femtosecond laser direct writing. At present, most of the femtosecond laser direct writing photoresists in use are free-radical photopolymerization type, mainly composed of acrylate resins, such as pentaerythr...

AI Technical Summary

Problems solved by technology

However, the liquid femtosecond laser direct writing photoresist has unavoidable defects: first, in the process of laser direct writing, the active species produced in the liquid photoresist diffuse quickly, which easily leads to the loss of processing accuracy and resolution. Secondly, the diffusion of oxygen in the liquid photoresist will produce oxygen inhibition, resulting in low sensitivity of the photoresist and a serious decrease in the speed of laser direct writing; finally, the mechanical strength of the liquid photoresist is poor, and the Wiener structure is easy to prepare distorted

Due to the above defects of liquid femtosecond laser photoresist, liquid femtosecond laser photoresist cannot be used for high-speed and high-precision 2D micro-nano pattern processing, which hinders the commercial application of femtosecond laser direct writing

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