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High-efficiency perovskite solar cell structure with double-interface processing and preparation method of high-efficiency perovskite solar cell structure

A solar cell and perovskite technology, applied in circuits, electrical components, photovoltaic power generation, etc., can solve the problem of low battery stability, and achieve the effects of improving stability, increasing scattering, and high efficiency

Pending Publication Date: 2022-08-09
CHINA THREE GORGES UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The main purpose of the present invention is to provide a double-interface treated high-efficiency perovskite solar cell structure and its preparation method, aiming to solve the technical problem of low battery stability

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  • High-efficiency perovskite solar cell structure with double-interface processing and preparation method of high-efficiency perovskite solar cell structure
  • High-efficiency perovskite solar cell structure with double-interface processing and preparation method of high-efficiency perovskite solar cell structure
  • High-efficiency perovskite solar cell structure with double-interface processing and preparation method of high-efficiency perovskite solar cell structure

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preparation example Construction

[0046] refer to figure 2 , the embodiment of the present application provides a preparation method of a double-interface treated high-efficiency perovskite solar cell structure, comprising the following steps:

[0047] S1. A nickel oxide antireflection hole transport layer is formed on the bottom surface of the FTO glass substrate by spin coating;

[0048] S2, depositing a perovskite layer containing cesium triple cations on the silica antireflection layer;

[0049] S3, forming a tin dioxide electron transport layer on the perovskite layer by a spin coating method;

[0050] S4, forming a titanium dioxide superhydrophobic layer on the tin dioxide electron transport layer by spin coating;

[0051] S5, preparing a back electrode by thermal evaporation on the superhydrophobic layer of titanium dioxide;

[0052] S6. Coat the silica sol on the surface of the FTO glass substrate to obtain a silica antireflection layer

[0053] In one embodiment, the described silica sol is coate...

Embodiment 1

[0071] Step 1: Dissolve 2.5g of nickel acetate tetrahydrate in 100ml of deionized water, stir for 12h, filter and spin at 3000rpm for 30s to the laser-etched FTO surface, and then sinter at 350°C for 1h to obtain nickel oxide Antireflection hole transport layer;

[0072] Step 2: Dissolve 548.6mg lead iodide, 77.1mg lead bromide, 190.1mg formamidine iodide and 21.8mg methylamine bromide in 0.8ml N,N-dimethylformamide and 0.2ml dimethylformamide In the mixed solvent of sulfoxide, 520 mg of cesium iodide and 1 mL of chloroform solution were then added, and the obtained mixed solution was stirred at room temperature for 1 h to be used as a perovskite precursor solution. Spin-coating the perovskite precursor solution, spin-coating the chlorobenzene anti-solvent on the surface of the precursor solution in the last 25 seconds, and then annealing at 100 °C for 60 min to obtain a cesium-containing triple cation perovskite layer;

[0073] The third step: dilute the original tin oxide s...

Embodiment 2

[0077] Step 1: Dissolve 2.5g of nickel acetate tetrahydrate and 104mg of formamidine acetate in 100ml of deionized water, stir for 12h, filter and spin-coat at 3000rpm for 30 seconds on the laser-etched FTO surface, and then sinter at 400°C 1h to obtain a nickel oxide antireflection hole transport layer;

[0078] Step 2: Dissolve 548.6mg lead iodide, 77.1mg lead bromide, 190.1mg formamidine iodide and 21.8mg methylamine bromide in 0.8ml N,N-dimethylformamide and 0.2ml dimethylformamide In the mixed solvent of sulfoxide, 520 mg of cesium iodide and 1 mL of chloroform solution were then added, and the obtained mixed solution was stirred at room temperature for 1 h to be used as a perovskite precursor solution. Spin-coating the perovskite precursor solution, spin-coating the chlorobenzene anti-solvent on the surface of the precursor solution in the last 25 seconds, and then annealing at 100 °C for 60 min to obtain a cesium-containing triple cation perovskite layer;

[0079] The ...

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Abstract

The invention discloses a double-interface processed high-efficiency perovskite solar cell structure and a preparation method thereof. The high-efficiency perovskite solar cell structure comprises an anti-reflection film outer layer, an FTO glass substrate, an anti-reflection hole transport layer, a perovskite layer, an electron transport layer, a super-hydrophobic layer and a back electrode which are stacked in sequence. Optical regulation and control are realized by using the anti-reflection film outer layer and the anti-reflection hole transport layer, and a controllable preparation process of films with different refractive indexes is formed, so that the transmittance of an ultraviolet wave band and a visible light wave band can be effectively controlled, the stability of the cell is greatly improved, the carrier extraction and transmission capability can be improved, and the performance of the cell is improved. And the efficiency of the perovskite solar cell is higher.

Description

Technical field [0001] The invention relates to the technical field of perovskite solar cells, and in particular to a high-efficiency perovskite solar cell structure with dual interface treatment and a preparation method thereof. Background technique [0002] The latest certified efficiency of perovskite solar cells has reached 25.5%, and it is expected to become a new generation of solar cells put into practical use. However, perovskite materials and devices are unstable under heat, humidity and light conditions. Under working conditions, due to light, water, Oxygen, etc. affects the decomposition speed faster, and the decomposed ions will also damage the charge transport layer or electrode, destroy the carrier separation function of the battery, and rapidly reduce the overall battery performance. The thermal stability of perovskite is an intrinsic problem, which is mainly determined by the constituent elements of the material. The formation energy of perovskite material is...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/48
CPCH10K71/15H10K71/12H10K30/15Y02E10/549
Inventor 高铭唯
Owner CHINA THREE GORGES UNIV
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