Liquid crystal display device, driving method of the same, and electronic device including the same

Inactive Publication Date: 2010-09-30
SEMICON ENERGY LAB CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0060]According to one embodiment of the present invention, deterioration in characteristics of a transistor can be suppressed. Alternatively, according to one embodiment of the present invention, the channel width of a transistor can be reduced. Particularly, suppression of deterioration in characteristics of a pull-up transistor or reduction in channel width of a pull-up transistor can be achieved. Alternatively, according to one embodiment of the present invention, a layout area can be reduced. Alternatively, according to one embodiment of the present invention, the size of a frame of a display device can be reduced. Alternatively, according to one embodiment of the pres

Problems solved by technology

Alternatively, in some cases when the channel width of a transistor is large, a

Method used

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  • Liquid crystal display device, driving method of the same, and electronic device including the same
  • Liquid crystal display device, driving method of the same, and electronic device including the same
  • Liquid crystal display device, driving method of the same, and electronic device including the same

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Experimental program
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embodiment 1

[0109]In this embodiment, one example of a semiconductor device will be described. The semiconductor device in this embodiment can be used for a variety of kinds of driver circuit, for example, a shift register, a gate driver, or a source driver. Note that the semiconductor device in this embodiment can also be referred to as a driver circuit or a circuit.

[0110]First, a semiconductor device of this embodiment will be described with reference to FIG. 1A. The semiconductor device in FIG. 1A includes a plurality of switches: switches 11_1 and 11_2. The switches 11_1 and 11_2 connects a wiring 111 and a wiring 112. However, this embodiment is not limited to this example. The semiconductor device can include three or more switches.

[0111]Next, an example of a signal, voltage, or the like which is input to or output from each wiring is described.

[0112]As an example, a signal OUT is output from the wiring 111. The signal OUT can have a first potential state and a second potential state, for...

embodiment 2

[0151]In this embodiment, an example of a semiconductor device is described. The semiconductor device in this embodiment can include the semiconductor device described in Embodiment 1. Specifically, a structure in the case where, for example, a transistor is used as a switch included in the semiconductor device in Embodiment 1 is described. However, this embodiment is not limited to this example. A variety of elements, a variety of circuits, or the like can be used as a switch. Note that description of the content described in Embodiment 1 is omitted. Note that the content described in this embodiment can be combined with the content described in Embodiment 1 as appropriate.

[0152]First, the semiconductor device of this embodiment will be described with reference to FIG. 4A. The semiconductor device in FIG. 4 includes a circuit 100. The circuit 100 has a structure similar to that in the case where a transistor is used as a switch in the structure described in Embodiment 1. FIG. 4A sh...

embodiment 3

[0243]In this embodiment, an example of a structure which is different from that of the circuit 10 described in Embodiment 2 is described. Note that description of the content in Embodiments 1 and 2 is omitted. Note that the content described in this embodiment can be combined with the content described in Embodiments 1 and 2 as appropriate.

[0244]First, a specific example of the circuit 10 which is different from that in Embodiment 2 is described with reference to FIG. 14. The circuit 10 in FIG. 14 includes a circuit 300 in addition to the circuit 200. The circuit 300 is part of the circuit 10. Note that part of the circuit 300 can be used also as part of the circuit 200. Part of the circuit 200 can be used also as part of the circuit 300. The circuit 300 is connected to the wiring 113, the wiring 116, the wiring 117, the node n1, the node n2, and / or the wiring 111. However, this embodiment is not limited to this example. The circuit 200 can be connected to a variety of wirings or n...

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Abstract

It is an object to suppress deterioration of characteristics of a transistor in a driver circuit. A first switch for controlling whether to set a potential state of an output signal by being turned on and off in accordance with the first input signal, and a second switch for controlling whether to set a potential state of an output signal by being turned on and off in accordance with the second input signal are included. A first wiring and a second wiring are brought into electrical continuity by turning on and off of the first switch or the second switch.

Description

BACKGROUND OF THE INVENTION[0001]1. Field of the Invention[0002]The present invention relates to a semiconductor device, a display device, a liquid crystal display device, a method for driving these devices, and a method for manufacturing these devices. The present invention particularly relates to a semiconductor device, a display device, and a liquid crystal display device which include driver circuits formed over the same substrates as pixel portions, and a method for driving these devices. Further, the present invention relates to an electronic device including the semiconductor device, the display device, or the liquid crystal display device.[0003]2. Description of the Related Art[0004]In recent years, with the increase of large display devices such as liquid crystal televisions, display devices have been actively developed. In particular, a technique for forming a driver circuit such as a gate driver over the same substrate as a pixel portion by using transistors including a n...

Claims

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Application Information

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IPC IPC(8): G06F3/038
CPCG09G3/3677G09G3/3688G11C19/28G09G2310/0286G09G2320/043G09G2300/0417G09G3/3266G09G2310/0267G09G2330/021
Inventor KIMURA, HAJIMEUMEZAKI, ATSUSHI
Owner SEMICON ENERGY LAB CO LTD
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