Epitaxial substrate for semiconductor device, semiconductor device, and process for producing epitaxial substrate for semiconductor device

a semiconductor device and epitaxial substrate technology, applied in the direction of crystal growth process, polycrystalline material growth, chemically reactive gas, etc., can solve the problems of reducing the surface quality of the film, deteriorating the surface form, and forming unnecessary surface levels, etc., to achieve small internal stress, high mobility, and high mobility

Active Publication Date: 2011-02-03
PROMISING FUTURE +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Benefits of technology

[0026]Further, according to the second aspect of the present invention, there are achieved an epitaxial substrate capable of manufacturing a semiconductor device and the semiconductor device, the semiconductor device having a small internal stress due to strains and generating two-dimensional electron gas at higher concentration of 3×1013/cm2 more.
[0027]Further, according to the third, sixth, seventh, twelfth and thirteenth aspects of the present invention, there are achieved an epitaxial substrate capable of manufacturing a semiconductor device and the semiconductor device, the semiconductor device generating two-dimensional electron gas at high concentration and having high mobility.
[0028]In particular, according to the thirteenth aspect of the present invention, the temperature is decreased to the bather layer forming temperature after the formation of the spacer layer. Accordingly, the surface of the channel layer is prevented from becoming deteriorated due to t...

Problems solved by technology

In order to put the above-mentioned HEMT device or a substrate for HEMT device that is a multi-layer structure used in manufacturing the same to practical use, various problems need to be solved: problems related to performance improvement such as increase of power density and efficiency, problems related to functional improvement such as achieving normally-off operation, and fundamental problems such as enhancing reliability and reducing cost.
This leads to degradation in film quality and deterioration in surface form (such as increase of strains and occurrence of cracks).
As a result, there occur various prob...

Method used

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  • Epitaxial substrate for semiconductor device, semiconductor device, and process for producing epitaxial substrate for semiconductor device
  • Epitaxial substrate for semiconductor device, semiconductor device, and process for producing epitaxial substrate for semiconductor device
  • Epitaxial substrate for semiconductor device, semiconductor device, and process for producing epitaxial substrate for semiconductor device

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first embodiment

Configuration of HEMT Device

[0046]FIG. 1 is a schematic cross-sectional view schematically showing the configuration of a HEMT device 10 according to a first embodiment of the present invention. The HEMT device 10 has the configuration in which a substrate 1, a buffer layer 2, a channel layer 3 and a barrier layer 5 are faulted by lamination. The buffer layer 2, the channel layer 3 and the barrier layer 5 are preferred examples of layers that are epitaxially formed (details thereof are described below) using the metal organic chemical vapor deposition method (MOCVD method). Hereinbelow, the laminated structure faulted by laminating the substrate 1, the buffer layer 2, the channel layer 3 and the barrier layer 5 is also referred to as an epitaxial substrate 10A. Note that ratios of respective layers in FIG. 1 do not reflect actual ones.

[0047]Hereinbelow, while description is given of a case where the MOCVD method is used for the formation of each layer, other epitaxial growth techniq...

second embodiment

HEMT Device Including Spacer Layer

[0100]FIG. 8 is a schematic cross-sectional diagram schematically showing the configuration of a HEMT device 20 according to a second embodiment of the present invention. The HEMT device 20 has the configuration in which a spacer layer 4 is interposed between the channel layer 3 and the barrier layer 5 of the HEMT device 10 according to the first embodiment. Constituent elements other than the spacer layer 4 are the same as those of the HEMT device 10 according to the first embodiment, and thus detailed description thereof is omitted. Note that the laminated structure in which the substrate 1, the buffer layer 2, the channel layer 3, the spacer layer 4 and the barrier layer 5 are formed by lamination is also referred to as an epitaxial substrate 20A.

[0101]The spacer layer 4 is formed of a group III nitride that has a composition of Inx3Aly3Gaz3N (x3+y3+z3=1), contains at least Al, and has a bandgap equal to or larger than the bandgap of the barrier ...

example 1

[0117]In this example, the HEMT device 10 according to the first embodiment was manufactured. Specifically, a plurality of epitaxial substrates 10A having different combinations of the channel layer 3 and the barrier layer 5 were manufactured, to thereby manufacture the HEMT device 10 using each of them.

[0118]In manufacturing the epitaxial substrates 10A, first, a plurality of 6H—SiC substrates that have (0001) plane orientation and a diameter of two inches were prepared as the substrate 1. Each of the substrates 1 was placed in a reactor of an MOCVD apparatus, and an inside of the reactor was vacuumed. After that, a pressure inside the reactor was set to 30 kPa, thereby forming the atmosphere in hydrogen / nitrogen mixed flow state. Then, a temperature of the substrate was raised through susceptor heating.

[0119]When a susceptor temperature reached 1,050° C., Al source gas and ammonia gas were introduced into the reactor, to thereby form an AlN layer that serves as the buffer layer 2 ...

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Abstract

Provided is an epitaxial substrate having excellent two-dimensional electron gas characteristics and reduced internal stress due to strains. A channel layer is formed of a first group III nitride represented by Inx1Aly1Gaz1N (x1+y1+z1=1) so as to have a composition in a range determined by x1=0 and 0≦y1≦0.3. A barrier layer is formed of a second group III nitride represented by Inx2Aly2Gaz2N (x2+y2+z2=1) so as to have a composition, in a ternary phase diagram with InN, AlN and GaN being vertices, in a range surrounded by five straight lines determined in accordance with the composition (AlN molar fraction) of the first group III nitride.

Description

TECHNICAL FIELD[0001]The present invention relates to an epitaxial substrate that has a multi-layer structure composed of a group III nitride semiconductor, and more particularly, to a multi-layer structured epitaxial substrate for electronic devices and a method of manufacturing the same.BACKGROUND ART[0002]Nitride semiconductors having high breakdown electric field and high saturation electron velocity have been attracting attention as the next generation of semiconductor materials for high-frequency / high-power devices. In particular, a multi-layer structure formed by laminating layers formed of AlGaN and GaN has the feature that high-concentration two-dimensional electron gas (2DEG) is generated at a lamination interface (hetero interface) owing to a large polarization effect (spontaneous polarization effect and piezo polarization effect) inherent in a nitride material, and hence a high electron mobility transistor (HEMT) using the multi-layer structure as a substrate has been de...

Claims

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Application Information

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IPC IPC(8): H01L29/778H01L21/20
CPCC30B19/00C30B23/02C30B25/02C30B29/403H01L21/0237H01L21/02378H01L29/7786H01L21/02458H01L21/0254H01L21/0262H01L29/2003H01L29/201H01L21/02433
Inventor MIYOSHI, MAKOTOKURAOKA, YOSHITAKASUMIYA, SHIGEAKITANAKA, MITSUHIRO
Owner PROMISING FUTURE
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