Testing electrode of single nanometer materials and production thereof
A technology of nano-materials and test electrodes, which is applied in the direction of removing conductive materials by chemical/electrolytic methods, measuring leads/probes, etc., can solve problems affecting electrical properties, electrode short circuit, high contact resistance, etc., to increase flexibility and accuracy The effect of making and ensuring precision
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Embodiment 1
[0034] This embodiment makes a single one-dimensional silver nanowire electrode, and describes the structure of the present invention in detail through the following specific manufacturing steps. The specific manufacturing steps are as follows: the substrate material 1 of the substrate is a silicon wafer, and a Si 3 N 4 insulating layer 2, the thickness of which is 200nm, such as figure 2 As shown; there are silver nanowires dispersed on it, and the distance between the two nanowires is about 1mm; the electrode pattern is as follows image 3 , wherein the size of the electrode lead part 4 is 100 × 100 μm square, the distance D1 and D2 at the electrode lead is 100 μm, the line width of the electrode lines L1, L2, L3, and L4 is 750 nm, and the distance D of the four electrode lines is 6 μm; the produced silver nano Wire electrode SEM image.
[0035] Concrete manufacturing steps: select the silicon substrate as the substrate material 1, and set a Si substrate with a thickness ...
Embodiment 2
[0037] This embodiment makes a one-dimensional T (or Y) type carbon nanotube electrode, and the manufacturing method is the same as embodiment 1, and its specific steps are as follows: the substrate of the substrate is silicon, and the insulating layer is SiO 2 , with a thickness of 400 nm. T (or Y) type carbon nanotubes are grown directly on the substrate. A focused ion beam system is used to etch a T-shaped mark with a size of 2×10μ, an etching height of about 200nm, an ion beam current of 200pA, and an etching time of about 60 seconds. Read the coordinates of the T (or Y) carbon nanotube node and the three endpoints. Design the electrode pattern according to the size of the T (or Y) tube. A 950PMMA electron beam resist is used, and the spin coating speed is 3000rpm. At this time, the thickness of the electron beam resist is about 260nm, and the pre-baking is performed on a hot plate at 180°C for 1 minute. Exposure parameters: write field size 100μm, acceleration voltage ...
Embodiment 3
[0039] The present embodiment makes the making of a single boron nanowire electrode, and the specific steps are as follows: the substrate of the substrate is a silicon wafer, and the insulating layer is SiO 2 , with a thickness of 300 nm. Sprinkle the dispersed boron nanowires on the substrate by spin coating, and use the focused ion beam system to deposit T-shaped platinum marks with a size of 4×10μ and a deposition height of about 400nm. The ion beam current is 200pA, and the deposition time is about 100 seconds. Read the coordinate values (u1, v1) (u2, v2) at both ends of the boron nanowire, and design the electrode pattern according to the size of the boron nanowire. ZEP520 electron beam resist was used, and the spin coating speed was 3000 rpm. At this time, the thickness of the electron beam resist was about 240 nm, and the pre-baking was performed on a hot plate at 200° C. for 2 minutes. Exposure parameters: write field size 200μm., accelerating voltage 30KV, apertur...
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Abstract
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