Photo resist film removing agent
A photoresist and stripper technology, applied in the processing of photosensitive materials, etc., can solve the problems of attacking tin, tin migration, residual copper, etc.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Publication Date
- 2007-11-14
- Estimated Expiration
- Not applicable · inactive patent
Abstract
Description
technical field
[0001] The invention relates to a photoresist stripping solution, which is a composition used for stripping the photoresist film from a substrate during the pattern transfer process of printed circuit manufacturing. Background technique
[0002] Since the printed board industry introduced dry film photoresist (Dry Film Photoresist), dry film has become one of the important "imaging" technologies in the transfer of circuit graphics, whether it is a positive image or a negative image. It has good process performance, excellent imaging and chemical resistance. In the pattern electroplating process, it plays an important role in manufacturing fine wires, improving productivity, simplifying procedures, and improving product quality. less than the effect. The current water-soluble dry film can meet the needs of flexible circuit and fine circuit production, and can provide good resolution, corrosion resistance and anti-plating ability.
[0003] The photoresist aft...
Examples
Embodiment 1
[0045]Embodiment 1: a kind of stripping agent of photoresist film, its weight percent composition is:
[0046] Diethanolamine 10%
[0047] Ethylamine 15%
[0049] Ethylene Oxide Propylene Oxide Copolymer 2%
[0050] n-octylamine 3%
[0051] Benzotriazole 0.5%
[0052] Deionized water 67.5%
[0053] Mix the above components uniformly to obtain the remover composition.
[0054] The stripping agent (liquid) of the above-mentioned photoresist film obtained is used to remove the photoresist film from the copper substrate, which is carried out after forming a photoresist pattern on the substrate.
Embodiment 2
[0055] Embodiment 2: a kind of stripping agent of photoresist film, its weight percent composition is:
[0056] Triethanolamine 10%
[0057] Ethylenediamine 12%
[0058] Ammonia 5%
[0059] Ethylene Oxide Propylene Oxide Copolymer 2.5%
[0060] Nonylamine 3%
[0061] Benzotriazole derivatives 0.3%
[0062] Deionized water 67%
Embodiment 3
[0063] Embodiment 3: a kind of stripping agent of photoresist film, its weight percent composition is:
[0064] Monoethanolamine 15%
[0065] Diethylamine 12%
[0066] Ethylene Oxide Propylene Oxide Copolymer 2%
[0067] N-decylamine 3%
[0068] Benzotriazole 0.5%
[0069] Deionized water 67.5%
[0070] Ammonia 5%