Photo resist film removing agent
A photoresist and stripper technology, applied in the processing of photosensitive materials, etc., can solve the problems of attacking tin, tin migration, residual copper, etc.
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Embodiment 1
[0045]Embodiment 1: a kind of stripping agent of photoresist film, its weight percent composition is:
[0046] Diethanolamine 10%
[0047] Ethylamine 15%
[0049] Ethylene Oxide Propylene Oxide Copolymer 2%
[0050] n-octylamine 3%
[0051] Benzotriazole 0.5%
[0052] Deionized water 67.5%
[0053] Mix the above components uniformly to obtain the remover composition.
[0054] The stripping agent (liquid) of the above-mentioned photoresist film obtained is used to remove the photoresist film from the copper substrate, which is carried out after forming a photoresist pattern on the substrate.
Embodiment 2
[0055] Embodiment 2: a kind of stripping agent of photoresist film, its weight percent composition is:
[0056] Triethanolamine 10%
[0057] Ethylenediamine 12%
[0058] Ammonia 5%
[0059] Ethylene Oxide Propylene Oxide Copolymer 2.5%
[0060] Nonylamine 3%
[0061] Benzotriazole derivatives 0.3%
[0062] Deionized water 67%
Embodiment 3
[0063] Embodiment 3: a kind of stripping agent of photoresist film, its weight percent composition is:
[0064] Monoethanolamine 15%
[0065] Diethylamine 12%
[0066] Ethylene Oxide Propylene Oxide Copolymer 2%
[0067] N-decylamine 3%
[0068] Benzotriazole 0.5%
[0069] Deionized water 67.5%
[0070] Ammonia 5%
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