Method for producing silicide nano-structure on insulated underlay
A nano-structured technology on an insulating substrate is applied in the manufacture of semiconductor/solid-state devices, photolithographic process exposure devices, electrical components, etc. Good repeatability, small scale effect
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0044] The platinum silicide nanostructure prepared in this embodiment can be found in figure 2 .
[0045] refer to figure 1 , the preparation method of this example is according to figure 1 The technological process is carried out, and the detailed description is as follows:
[0046] 1) Select an SOI substrate with a thin layer of single crystal silicon prepared by oxygen injection isolation technology, its crystal orientation is (100), the top layer silicon 2 of the SOI substrate is single crystal silicon, its thickness is 150 nanometers, and the insulating layer 1 is a silicon oxide layer with a thickness of 350 nanometers;
[0047] 2) ultrasonically cleaning the SOI substrate described in step 1) three times with acetone, alcohol and deionized water respectively, and drying it for later use;
[0048] 3) On the SOI substrate obtained in step 2) using a spin coater, coat a layer of positive electron beam photoresist PMMA, and bake it on a hot plate at 180° C. for 1 minu...
Embodiment 2
[0054] refer to figure 1 , make the nickel silicide nanostructure of this embodiment according to the flow process of the present invention:
[0055] 1) Spin-coat HSQ solution on a single crystal silicon substrate, bake at 250°C for 2 minutes, and then form an HSQ insulating dielectric layer with a thickness of about 150 nm, and then use magnetron sputtering to deposit a thin polysilicon layer with a thickness of about 100 nm. Nano.
[0056] 2) Spin-coat positive electron beam photoresist PMMA on the SOI substrate prepared in step 1), and bake it on a hot plate at 180° C. for 1 minute. The thickness of the photoresist is about 150 nanometers. A series of lines with a length of 100 micrometers and a width of 30 nanometers are exposed on the photoresist layer, and corresponding photoresist patterns are obtained after developing and fixing. The sample was put into an evaporation coating system, and metallic nickel was deposited by thermal evaporation with a thickness of 80 nano...
Embodiment 3
[0061] refer to figure 1 , the technical process of making titanium disilicide nanostructure in this embodiment is according to figure 1 As shown, the specific steps are as follows:
[0062] 1) An SOI substrate with a thin single crystal silicon layer prepared by oxygen injection isolation technology is selected, the crystal orientation is (100), the thickness of the top silicon layer is 100 nanometers, and the thickness of the silicon oxide buried layer is 350 nanometers.
[0063] 2) Spin-coat positive electron beam photoresist PMMA on the substrate, bake at 180° C. for 1 minute, the thickness of the photoresist is about 100 nanometers, and put it into a Raith 150 electron beam exposure system for exposure. The designed figure is a line with a length of 50 microns and a width of 50 nanometers, and corresponding nano-channels can be obtained on the photoresist layer after developing and fixing. Then put the sample into an evaporation coating system, and deposit titanium meta...
PUM
| Property | Measurement | Unit |
|---|---|---|
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
Login to View More