Method for preparation of indium oxide transparent film with high electron mobility

An indium oxide and thin film technology, which is applied in the field of In2O3 crystal thin films, can solve the problems of difficult control of deposition parameters of crystal thin films, poor uniformity, poor repeatability, difficult carrier concentration, etc., and achieves a large substrate temperature change window and manufacturing costs. Low, repeatable effect

Inactive Publication Date: 2009-08-26
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Existing preparation In 2 o 3 Thin film technology, including the catalytic reaction growth method based on gas-liquid-solid, tube heating furnace thermal evaporation method, electron beam evaporation and DC magnetron sputtering etc. to prepare In 2 o 3 material, but existing In 2 o 3 The crystal thin film process has disadvantages such as difficult control of deposition parameters, easy formation of a large number of oxygen defects, difficulty in controlling carrier concentration, and poor uniformity and repeatability.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] Embodiment 1 Sputtering deposition of indium oxide transparent semiconductor thin film with pure argon gas on the glass substrate

[0019] The first step: cleaning of the glass substrate:

[0020] 1. Put the glass substrate into a beaker filled with deionized water, clean it with ultrasonic waves for 2 minutes, then rinse it with deionized water for 6 times, repeat this step 3 times

[0021] 2. Add an appropriate amount of anhydrous sodium carbonate powder, shake the beaker gently to dissolve, bathe in 80°C water for 15 minutes, and then rinse with deionized water repeatedly 12 times

[0022] 3. Neutralize the alkalinity of sodium carbonate remaining on the glass substrate; take another clean beaker, mix 3-5% acetic acid solution with deionized water; soak the substrate in the acetic acid solution for 30 seconds, and immediately put Return to the beaker filled with deionized water, then rinse with deionized water repeatedly 12 times

[0023] 4. On the vertical laminar...

Embodiment 2

[0038] Embodiment 2: Sputtering deposition of indium oxide transparent semiconductor thin film with pure oxygen on the glass substrate

[0039] Refer to the preparation method and steps of Example 1: use glass as the substrate, the growth conditions are radio frequency power 120W, the growth temperature is set at 500°C; the partial pressure ratio of argon and oxygen is 0:10sccm; the growth pressure is 3.0Pa, and the growth time is 1 hour . Income In 2 o 3 The thickness of the thin film sample is 100nm, the resistivity of the bulk material measured by the van der Pauw method is about 1.5Ω·cm, the thin film is an n-type conductive semiconductor, and the electron concentration is 5.7×10 17 cm -3 , with a Hall mobility of 7.5 cm 2 / V·s.

Embodiment 3

[0040] Embodiment 3: Sputter deposition of indium oxide transparent semiconductor thin film with mixed gas (argon+oxygen) on glass substrate

[0041] Refer to the preparation method and steps of Example 1: use glass as the substrate, the growth conditions are radio frequency power 80W, the partial pressure ratio of argon and oxygen is 1:1sccm, the growth pressure is 1.5Pa, the growth temperature is 40°C, and the growth time is 1 hour , the resulting In 2 o 3 The thickness of the thin film sample is 170nm, and the resistivity of the bulk material measured by the van der Pauw method is about 2.4×10 3 Ω cm, the film is an n-type conductive semiconductor, and the electron concentration is 2.9×10 15 cm -3 , with a Hall mobility of 1.9 cm 2 / V·s.

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Abstract

A method for the preparation of the indium oxide transparent film with high electron mobility adopts the double-chamber high- vacuum radio-frequency magnetron sputtering method, wherein the high-purity indium oxide with the purity of 99. 99 27634872s taken as the target material, the glass is taken as the substrate, one or two of the high-purity argon and oxygen with the purity of 99. 99 5869744s taken as the sputtering gas, the sputtering growth is performed in the magnetron sputtering device, thus the n-typed transparent In2O3semiconductor film material with different electron concentration and high electron mobility is obtained. The method has the advantages of easy control of the deposition parameter, reliable preparing process, good repetitiveness and lower cost of manufacture.

Description

technical field [0001] The present invention relates to high electron mobility indium oxide (In 2 o 3 ) The preparation of transparent semiconductor crystal thin films, specifically through the combination of radio frequency magnetron sputtering and gas reaction to prepare In 2 o 3 A crystal thin film belongs to the technical field of semiconductor materials. Background technique [0002] Silicon-based thin-film transistor fabrication is a well-established process and is widely used in flat-panel displays. However, such devices have certain limitations, such as photosensitivity, low mobility (less than 1 cm 2 / V·s) etc. So more and more people focus on oxide semiconductors, such as zinc oxide, gallium, indium oxide, etc., even if these films are grown at room temperature, they have high mobility. Higher channel mobility would lead to faster operation of thin-film transistors, and these transparent conductive oxides could also be used in solar cells and flat-panel displ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/08C23C14/18C03C17/245
Inventor 吴惠桢朱夏明原子健
Owner ZHEJIANG UNIV
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