Polishing liquid for polishing monocrystalline silicon piece chemical machine

A chemical-mechanical, single-crystal silicon wafer technology, applied in polishing compositions containing abrasives, etc., can solve the problems of low polishing efficiency, high surface roughness, easy to produce scratches and dent damage, etc., to ensure fine quality. , Reduce the surface roughness, the effect of high-efficiency ultra-fine chemical mechanical polishing

Inactive Publication Date: 2010-03-17
DALIAN SANDAAOKE CHEM
View PDF2 Cites 31 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although there have been literature reports on single crystal silicon wafer polishing fluids, these polishing fluids have problems such as low polishing efficiency, high surface roughness, and easy scratches and dent damage.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] It consists of abrasive, active agent, dispersant, chelating agent, pH regulator and pure water, and the pH value is 9.0-12.0, more preferably 10.0-11.5. Raw materials and mass percentages are: abrasive 0.1%-20%, chelating agent 0.1%-2%, dispersant 0.1%-5%, active agent 0.1%-5%, pH regulator 0.01%-10%, pure water less than or Equal to 90%.

[0023] The abrasive is SiO 2 and Al 2 o 3 Hydrosol particles, surface covered with aluminum SiO 2 At least one of the hydrosol particles, the particle size of the abrasive is 30-160nm.

[0024] The chelating agent is at least one of ethylenediaminetetraacetic acid, diethylenetriaminepentaacetic acid, triethylenetetraminehexaacetic acid, nitrilotriacetic acid and ammonium or sodium salts thereof.

[0025] The dispersant is ethylene oxide-propylene oxide block copolymer, polyvinyl alcohol, polyvinyl alcohol and polystyrene block copolymer, polyacrylic acid and its salt (PAA), polyethylene glycol (PEG) , polyethyleneimine (PEA), ...

Embodiment 2

[0034] Raw materials and weight percentages are as follows:

[0035] The abrasive is SiO with a particle size of 60nm 2 Hydrosol particles 2%;

[0036] The chelating agent is ethylenediaminetetraacetic acid 1%,

[0037] Dispersant is ethylene oxide-propylene oxide block copolymer (model Lutensol XL 100, produced by BASF Co.Ltd.) 2%;

[0038] The active agent is fatty alcohol polyoxyethylene polyoxypropylene ether 2% (model pluronic, produced by BASF Co. Ltd.).

[0039] The pH regulator is 3% tetramethylammonium hydroxide;

[0040] Pure water balance (90%).

[0041] Prepare polishing liquid and carry out polishing experiment according to the method for embodiment 1, the material removal rate after polishing is R=520nm, surface roughness R a = 0.2nm.

Embodiment 3

[0043] Raw materials and weight percentages are as follows:

[0044] The abrasive is Al with a particle size of 30nm 2 o 3 Hydrosol particles 5%;

[0045] The chelating agent is 0.5% of diethylenetriaminepentaacetic acid;

[0046] Dispersant is polyethylene glycol (PEG) 2%;

[0047] The active agent is C 12 h 25 O(C 2 h 4 O) 10 H 2%;

[0048] The pH regulator is 5% triethanolamine;

[0049] Pure water balance (85.5%).

[0050] Prepare polishing liquid and carry out polishing experiment according to the method for embodiment 1, after polishing, material removal rate is R=420nm, surface roughness R a = 0.19nm.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
electrical resistanceaaaaaaaaaa
particle diameteraaaaaaaaaa
surface roughnessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a polishing liquid for polishing a monocrystalline silicon piece chemical machine, comprising the raw materials by mass percent: 0.1-20% of grinding material, 0.1-2% of chelating agent, 0.1-5% of dispersing agent, 0.1-5% of active agent, 0.01-10% of pH regulator and less than or equal to 90% of purified water; and the pH value is 9.0-12.0. The polishing liquid can obviouslyimprove the polishing speed (removing rate reaching 710nm), generates lower surface defect for a monocrystalline silicon piece, and reduces the surface roughness (reaching 0.18nm), thus realizing topolish the high-efficiency ultra-precision chemical machine of the monocrystalline silicon piece, and ensuring the fine quality of the surface of the monocrystalline silicon piece. The polishing liquid is alkaline, so as to be conveniently cleaned after polishing; furthermore, the polishing liquid does not corrode equipment, thus prolonging the service life of the equipment and reducing the processing cost.

Description

Technical field: [0001] The invention belongs to the technical field of chemical mechanical polishing of silicon wafers, in particular to a chemical mechanical polishing liquid for single crystal silicon wafers which is easy to clean after polishing, has high removal rate and low damage. Background technique: [0002] Single crystal silicon wafer is the main substrate material of integrated circuit (IC), and its surface roughness is one of the important factors affecting the etching line width of integrated circuit. With the continuous improvement of integrated circuit integration and the continuous reduction of feature size, the requirements for processing accuracy and surface quality of silicon wafers are also getting higher and higher. At present, the requirements of the Semiconductor Industry Association (SIA) for silicon wafers with a feature size of 0.065-0.13 μm are: the global flatness (GBIR) is less than 2 μm, the surface roughness reaches nanometer and sub-nanomete...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02
Inventor 侯军程宝君吴聪
Owner DALIAN SANDAAOKE CHEM
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap