Preparation method and application of redox graphene

A graphene and oxide stone technology is applied in the field of preparation of reduced graphene oxide to achieve the effect of low resistance

Active Publication Date: 2010-09-29
INST OF CHEM CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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However, these methods usually require the introduction of various

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  • Preparation method and application of redox graphene
  • Preparation method and application of redox graphene
  • Preparation method and application of redox graphene

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] Embodiment 1, repair graphene oxide

[0035] 1) Preparation of graphene oxide (GO) aqueous solution:

[0036] Graphene oxide was prepared by exfoliating graphite (purity, 99wt%) with an average particle size of 20 μm by the modified Hummers method. Add 1g of graphite to the solution containing 0.5g NaNO 3 23ml of sulfuric acid solution. Slowly add 3 g of potassium permanganate dropwise into the above mixed solution under vigorous stirring in an ice-water bath below 10°C. Stirring was continued for 5 days after the ice-water bath was removed. Add ultrapure water to the above slurry product, continue stirring for 30 min, and then add 125 ml (3 wt %) of hydrogen peroxide. After repeated precipitation, filtration, and centrifugation, the bright brown mixture was purified until no sulfate in the upper layer solution was detected with saturated barium chloride solution, and then graphene oxide was obtained by filtration. The obtained graphene oxide is dispersed in water ...

Embodiment 2

[0047] Embodiment 2, repairing graphene oxide and its application as electrode material in photoelectric response devices

[0048] The preparation of graphene oxide solution is as embodiment 1;

[0049] The preparation of graphene oxide (GO) film sample is as embodiment 1;

[0050] The method of vacuum thermal deposition of gold film on the graphene oxide film is as in Example 1, the difference is that the model is G75, the distance between the gap electrodes is 20 μm to 50 μm, the edge width of the copper mesh is 280 to 300 μm, and the diameter is 3mm. The copper mesh is a mask, such as Figure 5 shown;

[0051] The method of electron injection repairing graphene oxide film is as embodiment 1:

[0052] When the distance between the gap electrodes is 20 μm to 50 μm, in situ electron injection repairing of the graphene oxide film can be achieved by energizing at a voltage of 30 V for a certain period of time (20-600 s).

[0053] When the distance between the gap electrodes ...

Embodiment 3

[0060] Embodiment 3, the application of repairing graphene oxide as an electrode material in a photoelectric response device

[0061] The preparation of graphene oxide aqueous solution is as embodiment 1;

[0062] Preparation of graphene oxide (GO) film samples: Use a micro-injector to pipette 500 μl of graphene oxide aqueous solution with a concentration of 3 mg / ml and drop it on a hydrophilic glass slide, let it dry naturally, and obtain a thickness of 100 μl. - 300nm graphene oxide film. Store in a clean environment at room temperature.

[0063] The method of vacuum thermal deposition of gold film on the graphene oxide film is the same as that in Example 1, except that an aluminum foil with a width of 0.5-2 mm is used as a mask.

[0064] The method for repairing graphene oxide film by electron injection is as in Example 1, the difference is that because the width of the gap electrode is 0.5-2mm, it needs to be energized at 180V for a long time (20min) to realize in-situ e...

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Abstract

The invention discloses a redox graphene film, a preparation method and application thereof. The redox graphene film is prepared from the solution, which is formed by dissolving graphene oxide (GO) in polar solvent such as water, ethanol, methanol, acetone, acetonitrile, ethylene glycol, acetic acid, formic acid, ethyl acetate, pyridine, toluene and the like or mixed solvent thereof serving as a raw material, through steps of construction of a power-on repairing system, electron injection and the like. Compared with the resistance of the redox graphene film material before repairing, the resistance of the prepared redox graphene film is reduced by 102 to 108 times. The RGO film repaired by the method can be applied to the field of photoelectric conversion of the photoelectric response device and the like.

Description

technical field [0001] The invention relates to a preparation method and application of reduced graphene oxide. Background technique [0002] Graphene is a material with the thickness of a single layer of carbon atoms exfoliated from graphite materials. The carbon atoms are linked by covalent bonds to form a two-dimensional hexagonal honeycomb structure. Since 2004, the research group of Professor Geim of the University of Manchester successfully obtained single-layer graphene through the simple method of micromechanical cleavage for the first time (Novoselov, K.; Geim, A.; Morozov, S.; Jiang , D.; Zhang, Y.; Dubonos, S.; Grigorieva, I.; Firsov, A Science 2004, 306, 666-669.), at present, various physical or chemical methods have been developed to prepare various graphite-based Advanced functional materials of alkenes (Dreyer, D.R.; Park, S.; Bielawski, C.W.; Ruoff, R.S. Chem. Soc. Rev. 2010, 39, 228-240; Allen, M.J.; Tung, V.C.; Kaner, R.B. Chem. Rev. . 2010, 110, 132-145...

Claims

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Application Information

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IPC IPC(8): C01B31/04
Inventor 陈鹏磊刘鸣华姚平平
Owner INST OF CHEM CHINESE ACAD OF SCI
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