Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for controlling bismuth-sulfide polycrystalline thermoelectric material texture

A technology of thermoelectric materials and polycrystalline materials, which is applied in the growth of polycrystalline materials, chemical instruments and methods, and single crystal growth, and can solve problems such as increased thermal conductivity, complex processes, and easy growth of crystal grains

Inactive Publication Date: 2011-04-06
UNIV OF SCI & TECH BEIJING
View PDF1 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this method requires secondary SPS sintering, which is complex, time-consuming and energy-consuming.
In addition, the crystal grains are easy to grow during the secondary sintering process, resulting in an increase in thermal conductivity, which is not conducive to the improvement of thermoelectric performance.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for controlling bismuth-sulfide polycrystalline thermoelectric material texture
  • Method for controlling bismuth-sulfide polycrystalline thermoelectric material texture
  • Method for controlling bismuth-sulfide polycrystalline thermoelectric material texture

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0014] According to the molar ratio: bismuth nitrate / sodium thiosulfate=3:2 configuration, weigh the corresponding mass of bismuth nitrate and sodium thiosulfate, use ethanol and deionized water as solvent, and ethylenediamine as pH regulator to adjust pH value to 11~12, hydrothermal reaction at 160°C for 6 hours, and bismuth sulfide nanorods with a length of 500~800 nm and a diameter of 50~100 nm grown along the [001] plane were prepared.

[0015] Using the prepared nanorods as the precursor powder, spark plasma sintering was used to sinter at 250°C under a pressure of 80 MPa without holding time, and a bismuth sulfide bulk material with a high degree of texture was obtained. According to the XRD test and quantitative calculation, in the direction perpendicular to the c-axis, the texture degree of the [h k 0] plane is F=0.47. The thermoelectric performance test has good temperature stability, and the power factor in the test range from room temperature to 300 °C is 50~60μWm ...

example 2

[0017] According to the molar ratio: bismuth nitrate / sodium thiosulfate=3:2 configuration, weigh the corresponding mass of bismuth nitrate and sodium thiosulfate, use ethanol and deionized water as solvent, and ethylenediamine as pH regulator to adjust pH The bismuth sulfide nanorods with a length of 500 nm-2 μm and a diameter of 200-500 nm grown along the [001] plane were prepared by hydrothermal reaction at 180 °C for 36 hours.

[0018] Using the prepared nanorods as the precursor powder, spark plasma sintering was used to sinter at 550°C under a pressure of 40 MPa without holding time to obtain a bismuth sulfide bulk material with a high degree of texture. According to XRD test and quantitative calculation, in the direction perpendicular to the c-axis, the texture degree of [h k 0] plane is F=0.65. It has good temperature stability in thermoelectric performance test, and the power factor in the test range from room temperature to 300°C is 85~95μWm -1 K -2 .

example 3

[0020] According to the molar ratio: bismuth nitrate / sodium thiosulfate=3:2 configuration, weigh the corresponding mass of bismuth nitrate and sodium thiosulfate, use ethanol and deionized water as solvent, and ethylenediamine as pH regulator to adjust pH value to 11~12, hydrothermal reaction at 200°C for 48 hours, and bismuth sulfide nanorods with a length of 1~5 μm and a diameter of 100~300nm grown along the [001] plane were prepared.

[0021] Using the prepared nanorods as the precursor powder, spark plasma sintering was used to sinter at 450°C under a pressure of 10 MPa without holding time, and a bismuth sulfide bulk material with a high degree of texture was obtained. According to the XRD test and quantitative calculation, the texture degree of the [h k 0] plane is F=0.72 perpendicular to the c-axis direction. It has good temperature stability in the thermoelectric performance test, and the power factor in the test range from room temperature to 300°C is 110~120μWm -1 K...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
lengthaaaaaaaaaa
diameteraaaaaaaaaa
lengthaaaaaaaaaa
Login to View More

Abstract

The invention relates to a method for controlling bismuth-sulfide polycrystalline thermoelectric material texture, belonging to the technical field of energy materials. The method is characterized by comprising the following steps of: with bismuth nitrate and sodium thiosulfate as raw materials, quadrol as a pH value regulating agent and deionized water and absolute ethyl alcohol as solvents, carrying out hydro-thermal reaction for 6-72 hours at the temperature of 160-200 DEG C to prepare a monocrystal bismuth sulfide nano rod along an orientation (001), wherein the monocrystal bismuth sulfide nano rod has a diameter of 50-400nm and a length of 500-5 microns; then, sintering nano rod powder by using a spark plasma sintering technology at the pressutre of 10-80MPa and the temperature of 250-550 DEG C without holding time; retaining a monocrystal nano rod structure in a block body; arraying the monocrystal nano rod structure along a horizontal direction; and preparing a bismuth-sulfide block material with a high texture degree, wherein the texture degree is controllable. The method can simply and conveniently prepare the bismuth-sulfide block thermoelectric material with the controllable texture degree, thereby optimizing the carrier mobility of the material and increasing electrical transmission performance and the thermal stability of thermoelectric property.

Description

technical field [0001] The invention belongs to the technical field of energy materials, and in particular relates to a method for controlling the texture of a bismuth sulfide polycrystalline thermoelectric material, and relates to a hydrothermal synthesis method and a discharge plasma sintering process. Background technique [0002] Today, with the promotion of energy saving and emission reduction, thermoelectric materials that are pollution-free, zero-emission and can improve the comprehensive utilization of energy have attracted increasing attention. Thermoelectric materials have broad application prospects in semiconductor refrigeration and waste heat power generation. [0003] Bi 2 Te 3 It is currently the thermoelectric material with the best performance at room temperature and has been practically used. Bi as also a group IV-VA compound 2 S 3 , has a high Seebeck coefficient and low thermal conductivity, making it a promising substitute for Bi 2 Te 3 A new type ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/46C30B7/10C01G29/00
Inventor 张波萍葛振华尚鹏鹏于一强陈晨陈跃星
Owner UNIV OF SCI & TECH BEIJING
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com