Method for preparing anti-reflection layer and anti-reflection surface, photoelectric conversion device used by same
A technology of photoelectric conversion device and anti-reflection layer, which is used in photovoltaic power generation, circuits, electrical components, etc.
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[0029] Example 1
[0030] See 2A to 2E , which is an anti-reflection layer fabrication process for fabricating subwavelength anti-reflection structures on silicon wafers.
[0031] like Figure 2A As shown, the (100) silicon wafer 20 is first cleaned with dilute hydrofluoric acid to remove the native oxide layer on the surface; then, 200± of the silicon wafer 20 is deposited on the surface of the silicon wafer 20 by plasma-assisted chemical vapor deposition (PECVD). 5nm thick passivation layer 25. In this embodiment, the passivation layer 25 is a silicon nitride layer.
[0032] Subsequently, as Figure 2B As shown, a metal film 26 with a thickness of 15±0.5 nm is plated on the surface of the passivation layer 25 by an E-beam evaporating system. In this embodiment, the material of the metal film 26 is nickel.
[0033] like Figure 2C As shown in the figure, the flow rate of 3 sccm of hydrogen and nitrogen is introduced, and the metal film 26 is self-assembled into metal ...
Example Embodiment
[0036] Example 2
[0037] The fabrication process of this embodiment is basically the same as that described in Embodiment 1, but the difference is that the material of the metal film in this embodiment is gold, and the heat treatment condition of the metal film is also heated at 850° C. for 60 seconds, and finally the use of An etching solution composed of potassium iodide and iodine removes metal nanoparticles.
Example
[0038] Comparative Examples 1 to 3
[0039] A blank silicon wafer without treatment was taken as the experimental sample of Comparative Example 1. In addition, a single-layer anti-reflection layer of silicon nitride was formed on the silicon wafer by coating technology (Comparative Example 2, the thickness of the silicon nitride layer was 69.1 nm) ), and sequentially forming silicon nitride / magnesium fluoride on a silicon wafer to obtain a double-layer anti-reflection layer (Comparative Example 3, the thickness of the silicon nitride / magnesium fluoride layer is 69.1 nm / 56.0 nm).
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