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Method for preparing anti-reflection layer and anti-reflection surface, photoelectric conversion device used by same

A technology of photoelectric conversion device and anti-reflection layer, which is used in photovoltaic power generation, circuits, electrical components, etc.

Inactive Publication Date: 2011-06-29
SPRING FOUND OF NCTU
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

like Figure 1B As shown, the basic structure of the solar cell is the same as Figure 1A It is roughly the same, but the difference is that the surface of the anti-reflection layer 15 used in the solar cell has a sub-micron-scale protrusion structure (that is, the sub-wavelength anti-reflection structure 151), and currently it is mainly made by expensive and complicated photolithography technology. Subwavelength Antireflection Structure

Method used

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  • Method for preparing anti-reflection layer and anti-reflection surface, photoelectric conversion device used by same
  • Method for preparing anti-reflection layer and anti-reflection surface, photoelectric conversion device used by same
  • Method for preparing anti-reflection layer and anti-reflection surface, photoelectric conversion device used by same

Examples

Experimental program
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Embodiment 1

[0030] See Figure 2A to Figure 2E , which is an anti-reflection layer fabrication process for fabricating a sub-wavelength anti-reflection structure on a silicon wafer.

[0031] Such as Figure 2A As shown, the (100) silicon wafer 20 is first cleaned with dilute hydrofluoric acid to remove the native oxide layer on the surface; then, 200± 5 nm thick passivation layer 25 . In this embodiment, the passivation layer 25 is a silicon nitride layer.

[0032] Subsequently, if Figure 2B As shown, a metal film 26 with a thickness of 15±0.5 nm is plated on the surface of the passivation layer 25 by an E-beam evaporating system. In this embodiment, the material of the metal film 26 is nickel.

[0033] Such as Figure 2C As shown, hydrogen and nitrogen gas with a flow rate of 3 sccm are introduced, and the metal film 26 is self-assembled into metal nanoparticles 26' due to surface tension by rapid temperature rise annealing (heating at 850° C. for 60 seconds) as an etching passiva...

Embodiment 2

[0037] The production process of this embodiment is roughly the same as that described in Example 1, except that the material of the metal film in this embodiment is gold, and the heat treatment condition of the metal film is also to heat at 850°C for 60 seconds, and finally use An etchant composed of potassium iodide and iodine removes metal nanoparticles.

experiment example

[0041] The experimental sample that embodiment 1 is made with comparative example 1 to 3 is carried out the comparison of reflectivity, and its result please refer to Figure 4 . Such as Figure 4 As shown, the blank silicon wafer (comparative example 1) without processing all has quite high reflectivity (> 35%) for the wavelength of visible light and near-infrared ray; The long wavelength has lower reflectivity (35%) at 400nm; The long wavelength region has a low reflectance of 20%) in the short wavelength region of 400nm; and the silicon nitride sub-wavelength structure (embodiment 1) shows <10% reflectance, and the wavelength reflectance of 580nm-680nm is reduced to below 1%.

[0042] It can be seen from the above that the anti-reflection layer provided by the present invention has excellent anti-reflection effect, so it can be used in a photoelectric conversion device to increase the amount of light taken to obtain a high-efficiency photoelectric conversion device. Acc...

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Abstract

The invention relates to a method for preparing an anti-reflection layer. The method comprises the following steps of: forming a metallic film on the passivation layer; heat-treating the metallic film to enable the metallic film to self-assemble into metallic nanometer particles; removing partial region of the passivation layer by using the metallic nanometer particles as a shield to form a sub-wavelength anti-reflection structure, wherein the section area of the sub-wavelength anti-reflection structure increases along the thickness direction of the passivation layer; and removing the metallic nanometer particles. Besides, the invention also provides the prepared sub-wavelength anti-reflection structure and a reflection ratio thereof. Since the sub-wavelength anti-reflection structure provided by the invention has a good anti-reflection effect, the photoelectric conversion efficiency of the photoelectric conversion device can be improved. In addition, since the sub-wavelength anti-reflection structure is made on the passivation layer, the possibility of semi-conductor layer damage caused by reactive ions etching can be reduced; and then the photoelectric conversion efficiency of the photoelectric conversion device is improved.

Description

technical field [0001] The invention relates to an anti-reflection layer and its preparation method and application, especially to an anti-reflection layer suitable for photoelectric conversion devices, its preparation method and application. Background technique [0002] Anti-reflective coatings can be used in many product fields, especially in the solar industry, which has been booming in recent years. A solar cell is a photoelectric conversion device that converts light energy into electrical energy. Its basic structure is formed by joining P-type and N-type semiconductors. It uses P-N diodes to absorb light energy to generate free electrons and holes. Among them, Electrons and holes will be separated by the built-in potential formed by the semiconductor P-N junction, and move towards the N-type and P-type semiconductors respectively, thereby generating a current, and finally drawing the current through the electrodes, which is called the photovoltaic effect, which can be...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L31/0232H01L31/052H01L31/0216
CPCY02E10/50Y02P70/50
Inventor 张翼卡堤卡·彰德拉·沙湖林孟谷吕贻尧王圣评
Owner SPRING FOUND OF NCTU
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