Method for controllable synthesis of zinc oxide nanotube and/or nanowire

A technology of zinc oxide nanotubes and nanowires, applied in chemical instruments and methods, zinc oxide/zinc hydroxide, single crystal growth, etc., can solve the problem of low cost, achieve low cost, simple method, and easy scale Effect

Inactive Publication Date: 2011-10-05
JINAN UNIVERSITY
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This method has simple steps, low cost and easy scale-up

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  • Method for controllable synthesis of zinc oxide nanotube and/or nanowire
  • Method for controllable synthesis of zinc oxide nanotube and/or nanowire
  • Method for controllable synthesis of zinc oxide nanotube and/or nanowire

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Embodiment 1

[0044] The synthesis of embodiment 1 zinc oxide nanotube

[0045] The schematic diagram of the experimental steps of wet chemical epitaxial growth of zinc oxide nanotubes in this embodiment is as followsfigure 1 shown.

[0046] (1) Preparation of a seed layer In this embodiment, an intrinsic silicon wafer [Si substrate (100)] is used as a growth substrate, and the silicon wafer is cleaned by a standard cleaning process. Then a layer of zinc oxide film with a thickness of about 450nm was sputtered on the growth substrate by magnetron sputtering as a seed layer for epitaxial growth.

[0047] Magnetron sputtering process parameter: present embodiment is sputtering source with zinc oxide (ZnO, purity is 99.99%) target material, during magnetron sputtering, the pressure of studio is set as 1Pa, and the flow rate of argon is 20sccm, sputtering The injection time is 30min. The zinc oxide annealing step is determined by the degree of crystallization of the film after sputtering. If...

Embodiment 2

[0051] Embodiment 2 Synthesis of zinc oxide nanotube and nanowire mixture

[0052] The schematic diagram of the experimental steps of wet chemical epitaxial growth of zinc oxide nanowires in this embodiment is as follows figure 1 Shown (where the method of sputtering is changed to the method of sol-gel spin coating).

[0053] (1) Preparation of the seed layer A layer of zinc oxide thin film was coated on the glass as the seed layer. The zinc oxide seed layer can be prepared by magnetron sputtering, and this example is prepared by sol-gel method. Firstly, 5mM zinc acetate solution and 20mM sodium hydroxide solution, followed by zinc acetate solution and sodium hydroxide solution are mixed with a volume ratio of 9:1 and placed on a magnetic stirrer for 0.5h, during which Constant temperature at 60°C. Spin coating on the growth substrate again by spin coating method (1000r / min rotation speed). Finally, anneal at 500° C. for 3 hours in a high-temperature box furnace to obtain ...

Embodiment 3

[0056] The synthesis of embodiment 3 zinc oxide nanowires

[0057] The schematic diagram of the experimental steps of wet chemical epitaxial growth of zinc oxide nanowires in this embodiment is as follows figure 1 shown.

[0058] (1) Preparation of a seed layer In this embodiment, an intrinsic silicon wafer [Si substrate (100)] is used as a growth substrate, and the silicon wafer is cleaned by a standard cleaning process. Then, a layer of 450nm zinc oxide film was sputtered on the silicon wafer by magnetron sputtering as a seed layer for epitaxial growth.

[0059] Magnetron sputtering process parameter: present embodiment is sputtering source with zinc oxide (ZnO, purity is 99.99%) target material, during magnetron sputtering, the pressure of studio is set as 1Pa, and the flow rate of argon is 20sccm, sputtering The injection time is 30min. The zinc oxide annealing step is determined by the degree of crystallization of the film after sputtering. If the degree of crystalliz...

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Abstract

The invention discloses a method for controllable synthesis of a zinc oxide nanotube and/or nanowire, which comprises the following steps of: preparing a zinc oxide film to be used as a seed layer; then placing a substrate plated with the seed layer into reaction liquid, wherein the reaction liquid is formed through mixing a compound aqueous solution which can be ionized to generate OH<-> in water and a soluble-zinc-salt aqueous solution; and controllably obtaining a zinc oxide nanotube and nanowire through adjusting and controlling the concentration of reactants. The method disclosed by the invention has the advantages of reducing the complexity of synthesis and controllably obtaining different zinc oxide nano materials purely through controlling concentration. The obtained zinc oxide nanotube has the outer diameter of 17-50nm, the inner diameter of 3-21nm and the density of 10-100pieces/mum<2> or so; and the obtained zinc oxide nanowire has the diameter of 80-500nm and the density of 40-80/mum<2> or se. In the method, the synthesis is carried out at normal pressure, and aqueous solution reaction is applied; and the method is simple and easy and can be used for growing the zinc oxide nanotube and nanowire on scale.

Description

technical field [0001] The invention belongs to the field of novel nano-photoelectric materials, piezoelectric materials and electronic information materials, relates to a zinc oxide nanotube and a nanowire, in particular to a controllable method for synthesizing a zinc oxide nanotube and / or nanowire. Background technique [0002] In recent years, with the development of electronic materials and devices towards miniaturization, miniaturization, and integration, nano-functional materials have become an important direction for the research and development of new materials. Nano-materials are known as the most promising materials in the 21st century. [0003] With the rapid development of the new material industry, nanomaterials have been widely used in textile, construction, environmental protection, chemical and other fields. According to the forecast of Lux Research Company, the global sales of nanotechnology and products will reach 2.5 trillion US dollars by 2015. my count...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B7/14C30B29/16C30B29/62C01G9/02
Inventor 麦文杰刘彭义梁智文
Owner JINAN UNIVERSITY
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