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Seed crystal layer-assisting surface texturing zinc oxide transparent conductive film and preparation method thereof

A technology of transparent conductive film and surface texture, which is applied in chemical instruments and methods, coatings, crystal growth, etc., can solve problems such as complex process, affecting solar cell performance, film polycrystalline boundaries, dislocations, etc., so that no follow-up Effects of acid corrosion, good industrialization prospects, and good film properties

Active Publication Date: 2012-01-11
山东中科泰阳光电科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In addition, the wet surface corrosion reaction will also cause certain damage to the internal structure of the film, causing more defects such as grain boundaries and dislocations to appear in the film, and the mechanical strength of the film will decrease, thereby affecting the performance of the solar cell; and the plasma Dry etching also has problems such as complex process and high cost, making it difficult to apply to large-scale production

Method used

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  • Seed crystal layer-assisting surface texturing zinc oxide transparent conductive film and preparation method thereof
  • Seed crystal layer-assisting surface texturing zinc oxide transparent conductive film and preparation method thereof
  • Seed crystal layer-assisting surface texturing zinc oxide transparent conductive film and preparation method thereof

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Embodiment 1

[0071] Ordinary glass is used as the substrate, and the ZnO:Al seed layer is prepared by magnetron sputtering on it, and the ZnO-based doping compound (ZnO:Al) is used as the target material, and the doping ratio of Al is 2.0 of that of Zn element. mol%, background vacuum pumped to 3.0×10 -4 Pa, using argon with a purity of 99.99% as the working gas, the working pressure is maintained at 1.2Pa, room temperature sputtering is used, the distance between the target and the substrate is set to 7cm, DC magnetron sputtering is used, the sputtering power is 60W, and the deposition The time is 10 min, and the deposited seed layer grows along the preferred orientation of (002) crystal plane, with a thickness of 200 nm. Then, the seed layer is used as the initial crystal nucleus, and a ZnO:Al thin film is deposited on it by magnetron sputtering. Using ZnO-based doping compound (ZnO:Al) as the target material, the doping ratio of Al is 2.0mol%, and the background vacuum is pumped to 3.0...

Embodiment 2

[0074] Using ordinary glass as the substrate, the seed layer of ZnO:Al is first prepared by magnetron sputtering method, and the ZnO-based doping compound (ZnO:Al) is used as the target material, and the doping ratio of Al is 1.0mol% of Zn element , background vacuum to 3.0×10 -4 Pa, with argon with a purity of 99.99% as the working gas, the working pressure is maintained at 2.0Pa, room temperature sputtering is used, the distance between the target and the substrate is set to 7cm, DC magnetron sputtering is used, the sputtering power is 50W, and the deposition The time is 5 minutes, and the deposited seed layer grows along the preferred orientation of the (002) crystal plane, with a thickness of 80 nm. Then, the seed layer is used as the initial crystal nucleus, and a ZnO:Al thin film is deposited on it by magnetron sputtering. Using ZnO-based doping compound (ZnO:Al) as the target material, the doping ratio of Al is 2.0mol% of the Zn element, and the background vacuum is pu...

Embodiment 3

[0081] Using ordinary glass as the substrate, Zn(CH 3 COO) 2 2H 2 O and Ti(OR) 4 As a raw material, the doping ratio of Ti is 1.5mol% of the Zn element, and the film obtained by the sol-gel method is subjected to an annealing temperature of 550 ° C for 30 minutes to obtain a ZnO:Ti seed layer, and the prepared seed layer is along ( 002) crystal face preferred orientation growth, the thickness is 20nm. Then, the seed layer is used as the initial crystal nucleus, and the ZnO:Ti thin film is deposited on it by magnetron sputtering. Using ZnO-based doping compound (ZnO:Ti) as the target material, the doping ratio of Ti is 5.0mol%, and the background vacuum is pumped to 3.0×10 -4 Pa, with argon with a purity of 99.99% as the working gas, and a small amount of O 2 and H 2 Gas (O 2 and H 2 accounted for 5% and 2% of the total gas flow respectively), the working pressure was maintained at 1.2Pa, the substrate temperature was 90°C, the distance between the target and the substr...

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Abstract

The invention provides a seed crystal layer-assisting surface texturing zinc oxide transparent conductive film and a preparation method thereof. By means of the assistance of a zinc oxide seed crystal layer or a zinc oxide-doped seed crystal layer on a substrate, a nucleating / growing process simultaneously happening in a zinc oxide-doped film deposition process is separated into two independent stages, and then, a highly directional compact seed crystal layer and a texturing film which has a rough surface and rapidly grows by taking the seed crystal layer as an initial crystal nucleus are formed. The high-texturing surface (better optical trapping or optical capturing effect) of the zinc oxide film prepared by the invention, with unique characteristics, is far superior to similar literature reports in transparent electrical conductivity. The seed crystal layer-assisting surface texturing zinc oxide transparent conductive film prepared by the invention is simple and easy to implement, has low manufacturing cost, is suitable for mass production, can be matched with a solar cell preparation process and has a broad application prospect in the field of transparent electronics and novelphotoelectric devices.

Description

technical field [0001] The invention relates to a surface-textured zinc oxide transparent conductive film assisted by a seed layer and a preparation method thereof, belonging to the technical field of transparent conductive oxide (TCO) films. Background technique [0002] Transparent conductive oxide (TCO) thin films are key photovoltaic supporting materials, accounting for 30-40% of the cost of amorphous silicon and a-Si thin film cells. The transparent conductive film has high transparency and high conductivity that are usually incompatible in the same material, and mainly belongs to n-type electronic conductivity. Currently, the commonly used materials mainly include oxides of In, Sn and Zn and their composite multi-element oxide film materials. Due to the diffusion of heavy atoms in indium trioxide (ITO) and tin dioxide-based (FTO) in the light-absorbing layer of photovoltaic cells, the performance degradation in a medium-high temperature reducing atmosphere, and the sca...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/08C23C14/02C23C14/35C30B29/16C30B23/00
Inventor 黄富强万冬云
Owner 山东中科泰阳光电科技有限公司
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