Solar cell and preparation method thereof
A technology of solar cells and conductive layers, applied in the field of solar cells, can solve the problems of low short-circuit current, low photoelectric conversion efficiency, low carrier mobility, etc. Photoelectric conversion efficiency, the effect of improving transmission efficiency
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[0039] The manufacturing method of the solar cell with the above structure includes the following steps:
[0040] (1) Clean the substrate to make the surface of the substrate clean and increase its surface adhesion;
[0041] (2) Depositing a conductive electrode with a certain thickness on the back of the above-mentioned substrate can be, but not limited to, using vacuum evaporation, magnetron sputtering, chemical vapor deposition, etc., to deposit a certain thickness on the back of the above-mentioned substrate Metals such as aluminum, magnesium, gold, silver and their alloys are then annealed in a protective atmosphere to form ohmic contact electrodes;
[0042] (3) In the vacuum chamber, it is possible but not limited to use methods such as chemical vapor deposition, inductively coupled plasma etching, electron beam exposure, electron beam evaporation, and low-temperature vacuum sputtering to prepare semiconductor nanopillar arrays on the above-mentioned substrate;
[0043] (4) Vacu...
Example Embodiment
[0048] Example 1:
[0049] (1) Put the ZnO substrate in H with a mass percentage concentration of 0.5% 2 O 2 Soak in the mixed solution of ammonia water for 5 minutes, then ultrasonic treatment for 10 minutes, clean it with deionized water and dry it for later use;
[0050] (2) Using a chemical vapor deposition method, deposit metal copper with a thickness of 10 μm on the back of the above substrate, and then perform annealing treatment at 450° C. for 40 minutes in a protective atmosphere to form a metal copper electrode with ohmic contact;
[0051] (3) In the vacuum chamber, the In-Zn-O nanopillar array is prepared on the ZnO substrate material by electron beam evaporation, the average diameter of the nanopillars is 100nm, the height is 1000nm, and the spacing between the pillars is 100nm;
[0052] (4) Prepare a chlorobenzene solution with a mass ratio of P3HT and PCBM of 4:1, uniformly mixed, and a total concentration of 15mg / ml, fill the mixed solution into the void formed by the se...
Example Embodiment
[0056] Example 2:
[0057] (1) Put the AlN substrate on the H 2 O 2 Soak in the mixed solution of ammonia water for 5 minutes, then ultrasonic treatment for 10 minutes, clean it with deionized water and dry it for later use;
[0058] (2) Using a vacuum evaporation method, deposit a 5 μm thick metal aluminum on the back of the substrate, and then perform an annealing treatment at 350° C. for 20 minutes in a protective atmosphere to form an ohmic contact metal aluminum electrode;
[0059] (3) In the vacuum chamber, the AlN material nanopillar array is prepared on the AlN substrate by the self-chemical vapor deposition method, the average diameter of the nanopillars is 30nm, the height is 100nm, and the spacing between the pillars is 30nm;
[0060] (4) Using the vacuum co-evaporation method, the 4G1-3S and PCBM are filled into the gap formed by the semiconductor nanopillar array at a mass ratio of 1:1, and then plasma treatment is performed to make the organic material and the semiconduct...
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