Preparation method of mesoporous silica thin film material with low dielectric constant

A technology of mesoporous silicon oxide and low dielectric constant, applied in the field of nano-materials, achieves the effects of high temperature thermal stability and hydrophobic stability, good adhesion performance, and simple steps

Inactive Publication Date: 2012-04-11
CHONGQING UNIV OF ARTS & SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The pores of the film material prepared by the above sol-gel method can reach nanometer scale, but the following disadvantages generally exist: (1) The size of the pores is difficult to control; (2) ) The pore size distribution of the material is wide and the uniformity is poor; (3) The reproducibility of the material is not good
However, these additional hygroscopic treatment steps complicate the process and are difficult to implement in engineering, thus increasing production cost and operational difficulty
Therefore, it is still a challenge to obtain low dielectric constant mesoporous silicon oxide thin film materials with good comprehensive properties through a simple process.

Method used

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  • Preparation method of mesoporous silica thin film material with low dielectric constant
  • Preparation method of mesoporous silica thin film material with low dielectric constant
  • Preparation method of mesoporous silica thin film material with low dielectric constant

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] Example 2 The small-angle X-ray scattering (SAXS) measurement of the silicon oxide film material obtained in Example 1 was carried out by using the Nanostar U small-angle X-ray scattering instrument (CuKα) of Bruker, Germany. The tube pressure was 40 kV, the tube flow was 35 mA, and the recording time was 30 min. The resulting SAXS as figure 1 shown. Depend on figure 1 It can be seen that the SAXS spectra of As-made samples are at 0.46, 0.93 and 0.39 nm -1 3 clear diffraction peaks appear at , the three diffraction peaks q The value ratio is 1:2:3, which is assigned as the crystal plane diffraction peak of the layered mesoporous structure. After roasting under the protection of nitrogen at 350 °C, the clarity of the SAXS spectrum of the obtained sample decreased, and the diffraction peaks became wider, but two obvious diffraction peaks could also be observed, indicating that the layered structure after roasting at 350 °C still maintains the mesoporous structure. ...

Embodiment 2

[0033] Example 5 Use a contact angle measuring instrument (JC 2000A Powereach) to characterize the hydrophobic properties of the mesoporous silicon oxide thin layer obtained in Example 1, and use the formula for the contact angle Calculate, where h is the height of the water droplet, and d is the width of the thin layer in contact with the water droplet. Depend on Figure 4 It can be calculated that the hydrophobic angle of the measured mesoporous thin film material is 110.3°, which shows that the obtained thin layer material has excellent hydrophobic performance and good hydrophobic stability.

Embodiment 3

[0034] Embodiment 6 For the measurement of the dielectric constant, HP 4284A precision LCR meter is used for measurement. The quantum dots have a diameter of 3 mm and a frequency of 1 MHz. The dielectric constant is calculated from the capacitance and the area of ​​the metal electrodes. Depend on Figure 5 It can be seen that the dielectric constant of the mesoporous silicon oxide film material after firing is 2.26, and the stable time of the dielectric properties can be as long as 20 days. The excellent dielectric properties of mesoporous silicon oxide thin layers can be attributed to its ordered mesoporous structure and excellent hydrophobic properties. Under room temperature conditions, the dielectric constant increased by 0.26 after 20 days, which was only 11.5%, indicating that the silicon oxide thin film material prepared in Example 1 had good dielectric stability.

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Abstract

The invention relates to a preparation method of a mesoporous silica thin film material with a low dielectric constant. The method comprises: adding P123 and PDMS-PEO (polydimethylsiloxane-polyethylene oxide) into a polymerized silica sol so as to form a low-polysilicate precursor solution, subjecting the solution to aging and coating it on a silicon chip through spinning, then conducting roasting so as to obtain a mesoporous silica thin film material with a low dielectric constant. The polymerized silica sol is prepared by mixing TEOS (tetraethyl orthosilicate), water, hydrochloric acid and ethanol and conducting refluxing. With a dielectric constant of 1.9-2.8, the silica thin film material prepared by the method of the invention has good dielectric stability; with a skeleton shrinkage rate of 8%-16% after roasting, the material has excellent skeleton stability; meanwhile, the material has good high temperature thermal stability and hydrophobic stability; the mesopores of the thin film have a small pore size and uniform size distribution, and the specific surface area, pore volume, and pore size can respectively be 600-1000m<2>g<-1>, 0.35-0.65cm<3>g<-1> and 4.5-6.2nm. In short, the silica thin film material prepared by the method of the invention is especially suitable for the fields of low dielectric constant coatings, film separation, sensors, and optical materials, etc.

Description

technical field [0001] The invention relates to the technical field of new nanometer materials, in particular to a method for preparing a low dielectric constant mesoporous silicon oxide film material. Background technique [0002] With the continuous development of electronic and electrical technology, the size of electronic and electrical equipment and its components is getting smaller and larger, and the power is increasing. In order to improve the transmission efficiency of signals or energy, reduce line loss and signal or energy between different lines Interference between lines, it is necessary to use low dielectric constant materials to reduce capacitive effects or conduction coupling, thereby shortening the cycle time of signals and energy between conductor lines, reducing transmission lag, cross-interference between lines and capacitive coupling, and creating larger capacity, integrated Higher degree of equipment or components. Therefore, the development of elect...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B41/50
Inventor 刘玉荣
Owner CHONGQING UNIV OF ARTS & SCI
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