Acute myocardial infarction diagnosis-oriented biosensor and preparation method thereof
An acute myocardial infarction and biosensor technology, applied in the field of biomedicine, can solve the problems of low-concentration protein detection and long time-consuming detection sensitivity, and achieve important clinical practical value, fast response speed, and high diagnosis rate.
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Embodiment 1
[0059] Determination of cardiac troponin I using a quasi-one-dimensional silicon nanowire field-effect tube biosensor:
[0060] 1. Using the "top-down" method to prepare a field-effect transistor of a single quasi-one-dimensional silicon nanowire:
[0061] First, use electron beam lithography to process photoresist patterns on the surface of SOI silicon wafers, in which the width of the nanowire region is 50nm;
[0062] Then use ion beam etching (IBE) technology to etch the Si not covered by photoresist;
[0063] Then use ultraviolet lithography to prepare metal electrode patterns, and then use electron beam evaporation equipment to deposit nickel-gold electrodes;
[0064] Finally, the plasma-enhanced chemical vapor deposition (PECVD) technology is used to deposit silicon nitride / silicon oxide double-layer film on the surface of the device, in which the surface of the passivation layer is silicon nitride with a thickness of 100nm, and the silicon oxide film is at the bottom l...
Embodiment 2
[0070] Measurement of cardiac troponin T using a quasi-one-dimensional silicon nanowire field-effect tube biosensor:
[0071] 1. Using the "top-down" method to prepare a field-effect transistor of a single quasi-one-dimensional silicon nanowire:
[0072] First, use electron beam lithography to process photoresist patterns on the surface of SOI silicon wafers, in which the width of the nanowire region is 100nm;
[0073] Then use reactive ion etching (RIE) technology to etch the Si not covered by photoresist;
[0074] Then use ultraviolet lithography to prepare metal electrode patterns, and then use magnetron sputtering to deposit titanium-gold electrodes;
[0075] Finally, the plasma-enhanced chemical vapor deposition (PECVD) technology is used to deposit silicon nitride / silicon oxide double-layer film on the surface of the device, in which the surface of the passivation layer is silicon nitride with a thickness of 500nm, and the silicon oxide film is at the bottom layer with ...
Embodiment 3
[0081] Determination of Creatine Kinase Isoenzymes Using Quasi-One-Dimensional Silicon Nanowire Field-Effect Tube Biosensors:
[0082] 1. Using the "top-down" method to prepare a field-effect transistor of a single quasi-one-dimensional silicon nanowire:
[0083] First, use electron beam lithography to process photoresist patterns on the surface of SOI silicon wafers, in which the width of the nanowire region is 150nm;
[0084] Then use ion beam etching (IBE) technology to etch the Si not covered by photoresist;
[0085] Then use ultraviolet lithography to prepare metal electrode patterns, and then use thermal evaporation equipment to deposit nickel-gold electrodes;
[0086] Finally, the plasma-enhanced chemical vapor deposition (PECVD) technology is used to deposit silicon nitride / silicon oxide double-layer film on the surface of the device, in which the surface of the passivation layer is silicon nitride with a thickness of 300nm, and the silicon oxide film is at the bottom...
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