Metalloporphyrin-thienothiadiazole organic semiconductor material and preparation method and application thereof
An organic semiconductor, metalloporphyrin technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, luminescent materials, etc., can solve the problems of no literature and patent reports, limit the application scope of organic semiconductor materials, etc., to achieve good thermal stability and Environmental stability, improved carrier mobility, and the effect of good stability
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
preparation example Construction
[0040] The preparation method of metalloporphyrin-thienothiadiazole organic semiconductor material designed by the present invention, the steps are as follows:
[0041] Step S1. Dissolve 5,7-dibromothieno[3,4-c][1,2,5]thiadiazole (s) in the first organic solvent, and cool down to - with liquid nitrogen / isopropanol 78°C, then add n-butyllithium (n-BuLi) dropwise, and react at -78°C for 1-5 hours, then add 2-isopropoxy-4,4,5,5-tetramethyl-1, 3,2-dioxaborolane (x) or the structural formula is The bispinacolate diboron, continued to react at -78 ° C for 0.5-5 hours, then naturally warmed up to room temperature, and reacted for 1-48 hours to obtain 5,7-bis(4,4,5,5-tetramethyl Base-1,3,2-dioxaborolane) basethieno[3,4-c][1,2,5]thiadiazole (g); wherein, the first organic solvent is tetrahydrofuran , ether or at least one of dioxane; the molar ratio of 4,7-bis(tributyltin)-2,1,3-thienothiadiazole to tri-n-butyltin chloride is 1:1 ~10; the reaction formula is as follows:
[0042] ...
Embodiment 1
[0059] This embodiment discloses a silicon fluorene zinc porphyrin-thienothiadiazole organic semiconductor material with the following structure
[0060]
[0061] In the above formula, n=40;
[0062] The preparation steps of the above-mentioned organic semiconductor material are as follows:
[0063] 1. 5,7-bis(4,4,5,5-tetramethyl-1,3,2-dioxaborolane) thieno[3,4-c][1,2,5] Synthesis of Thiadiazoles
[0064]
[0065] Under the protection of nitrogen, add p-5,7-dibromothieno[3,4-c][1,2,5]thiadiazole (8.8g, 0.03mol) to the three-necked flask, add 200ml of tetrahydrofuran solvent , slowly inject n-butyllithium (25.2mL, 2.5M, 0.06mol) with a syringe at -78°C, continue to stir the reaction for 2h, inject 2-isopropoxy-4 with a syringe at -78°C , 4,5,5-tetramethyl-1,3,2-dioxaborolane (13 mL, 0.06 mol), stirred overnight at room temperature. Saturated aqueous sodium chloride (30ml) was added to terminate the reaction, extracted with chloroform, dried over anhydrous sodium sulfa...
Embodiment 2
[0083] This embodiment discloses a silicon fluorene iron porphyrin-thienothiadiazole organic semiconductor material with the following structure
[0084]
[0085] In the above formula, n=56;
[0086] The preparation steps of the above-mentioned organic semiconductor material are as follows:
[0087] 1. 5,7-bis(4,4,5,5-tetramethyl-1,3,2-dioxaborolane) thieno[3,4-c][1,2,5] Synthesis of Thiadiazoles
[0088] Its preparation sees embodiment 1 for details.
[0089] 2. Synthesis of 5-(9'-methyl-9'-hexadecyl)silafluorene-15-(9'-docosyl)silafluorene porphyrin
[0090]
[0091] Set up an anhydrous and oxygen-free device, weigh the intermediates 2-aldehyde-9-methyl-9-hexadecylsilafluorene (0.45g, 1mmol), 2-aldehyde-9-docosylsilafluorene ( 0.66g, 1mmol), dipyrromethane (0.30g, 2mmol), dissolved in 250ml of dichloromethane, blown nitrogen for 30min, added 2ml of trifluoroacetic acid into the syringe, stirred at 100°C for 1h, then added dichlorodicyanobenzene Quinone (DDQ) (1.82...
PUM
Property | Measurement | Unit |
---|---|---|
electrical resistance | aaaaa | aaaaa |
thickness | aaaaa | aaaaa |
thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com