Composite material comprising nanoparticles and production of photoactive layers containing quaternary, pentanary and higher-order composite semiconductor nanoparticles

A technology of nano-particles and composite materials, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, photovoltaic power generation, etc., and can solve the problems of unreported and unimportant preparation of quaternary and quinary compounds

Inactive Publication Date: 2012-05-16
ISOVOLTA OSTE ISOLIERSTOFFWERKE AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] However, the preparation of quaternary and pentadic compounds is not trivial, and they often use complex synthetic methods to prepare limited
Furthermore, there is no report that nanocrystals made of quaternary, e.g. CZTS or pentavalent chalcogenide compounds of type Ib-IIb-IV-VI can be made into a certain stoichiometric composition in the sense of the invention claimed herein

Method used

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  • Composite material comprising nanoparticles and production of photoactive layers containing quaternary, pentanary and higher-order composite semiconductor nanoparticles
  • Composite material comprising nanoparticles and production of photoactive layers containing quaternary, pentanary and higher-order composite semiconductor nanoparticles
  • Composite material comprising nanoparticles and production of photoactive layers containing quaternary, pentanary and higher-order composite semiconductor nanoparticles

Examples

Experimental program
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Effect test

Embodiment 1

[0024] Example 1: Synthesis of Cu in solution 2 ZnSnS 4 -Nanoparticles to prepare polycrystalline semiconductor layers

[0025] 1mmol (190.5mg) CuI, 0.5mmol (68.1mg) ZnCl 2 and 0.5mmol (313.2mg) SnI 4 Dissolve in 10ml oleylamine (or dodecylamine, nonylamine). Then 6 mmol (192.4 mg) of sulfur (sublimed) dissolved in 3 ml of oleylamine (or dodecylamine, nonylamine) was added and the solution was heated at 220° C. for 60 minutes. For purification, the particles were precipitated in methanol after cooling of the reaction solution and subsequently centrifuged. The obtained nanoparticles were dried at 60 °C and subsequently dissolved in various solvents such as chloroform, dichloromethane, toluene or hexane for further analysis or testing.

[0026]The nanoparticle solution was coated onto a substrate, and the resulting layer was subsequently heated at 500° C. for 2 hours. Thus a polycrystalline layer is formed.

[0027] Diffraction patterns of nanoparticles (TR 105A) and poly...

Embodiment 2

[0034] Embodiment 2: prepare Cu 2 ZnSnS 4 - Nanoparticle layer

[0035] In an ultrasonic bath, 0.165mmol (20.2mg) CuAc, 0.0825mmol (18.1mg) ZnAc 2 , 0.0825mmol (29.3mg) SnAc 4 And 1.65mmol (125.6mg) thiourea was dissolved in 2ml pyridine. The pale yellow solution was added dropwise onto a glass substrate. Alternatively, the coating solution can also be applied by spraying techniques such as air brushing.

[0036] The layer thus obtained was heated at 100°C for 8 minutes, at 150°C for 8 minutes and at 200°C for 8 minutes under an inert gas atmosphere. This changes the color of the layer to red, then brown, and finally black. The material thus obtained was analyzed by means of X-ray diffraction. Figure 5 The diffractograms of the CZTS-layer formed after (A) temperature treatment at 200°C and (B) after temperature treatment at 500°C are shown in .

[0037] Broad peaks at 28.4° (112), 47.3° (220 / 204), 56.1° (312 / 116), 69.1° (400 / 008) and 76.3° (332 / 316) originate from Cu ...

Embodiment 3

[0040] Embodiment 3: preparation poly-3-hexylthiophene (P3HT) / Cu 2 ZnSnS 4 - Bulk heterojunction solar cells

[0041] Cu obtained in the synthesis of embodiment 1 2 ZnSnS 4 - Nanoparticles used in combination with the electroactive polymer P3HT as a donor for the active layer of a nanocomposite solar cell. To this end, excess stabilizer (oleylamine) was first removed with pyridine by three ligand exchanges. Then prepare P3HT / Cu in chloroform 2 ZnSnS 4 - Solution (polymer concentration: 4 mg / ml; nanoparticle concentration: 12 mg / ml).

[0042] The solar cells are constructed in layers on an ITO-coated glass substrate. As a first layer, polyethylenedioxythiophene:polystyrenesulfonate (PEDOT:PSS) was applied by spin coating to level the ITO-electrode. The applied layer is dried at about 80° C. under inert gas. As the next layer, apply the active layer again by spin coating (P3HT / Cu in chloroform 2 ZnSnS 4 - solution). After another drying step under inert gas (15 minut...

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Abstract

The invention relates to a composite material composed of at least two constituents, wherein at least one constituent is present in the form of nanoparticles, which are made of at least three metals and at least one non-metal and the diameters of which are less than one micrometer, preferably less than 200 nm. The composite material according to the invention is suited in particular for producing photoactive layers.

Description

technical field [0001] The invention relates to composite materials comprising nanoparticles, and the preparation of photoactive layers comprising quaternary, pentadic or higher composite semiconductor nanoparticles. The invention also relates to the use of the photoactive layer described above. Background technique [0002] Quaternary, quinary and higher order more complex composite nanoparticles have a number of important advantages over usual binary and ternary nanoparticles. On the one hand, it is possible to replace expensive and rare elements such as indium in copper indium disulfide with inexpensive common elements such as zinc and tin by using quaternary nanoparticles. On the other hand, due to the higher amount of material composition, the band gap and band position can be adjusted very precisely (Bandlagen). Binary and ternary compounds offer only limited possibilities for this, whereas the use of quaternary or pentadic nanoparticles is more flexible in terms of ...

Claims

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Application Information

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IPC IPC(8): H01L51/42
CPCY02E10/52H01L51/426H01L51/0038H01L31/0326Y02E10/50H01L51/0036Y02E10/549Y02P70/50H10K85/114H10K85/113H10K30/35H10K30/50
Inventor D·迈斯纳T·拉特E·迈尔G·特里梅尔A·普莱辛F·施特尔策
Owner ISOVOLTA OSTE ISOLIERSTOFFWERKE AG
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