Method for preparing Ge-Sb-Te ternary phase-change material film

Abstract

The invention provides a method for preparing a Ge-Sb-Te ternary phase-change material film and relates to a phase-change material film. The method comprises the following steps: pre-treating a conductive substrate; preparing a Ge4<+> ion electrolyte solution; preparing a Sb3<+> and Te4<+> ion electrolyte solution; depositing under the condition of constant potential; and depositing under the condition of constant current. The Ge-Sb-Te ternary phase-change material film with stable structure, smoothness, compactness, low impurity content, and strong film layer adhesive force is prepared in a room-temperature water solution according to a simple electric chemical depositing method. The defects of complex technical equipment, high cost and difficulty in large-scale production existing in a magnetic control sputtering method, a chemical vapor deposition method or a traditional electric chemical deposition method are efficiently avoided; the method provided by the invention has the advantages of low cost, short production period, simple preparing technology, stable product quality and the like; and the method has a potential application prospect in the field of the semiconductor, especially the preparation of the phase-change storage material.

Description

technical field [0001] The invention relates to a phase-change material thin film, in particular to a preparation method of a Ge-Sb-Te ternary phase-change material thin film electrochemically deposited in aqueous solution. Background technique [0002] Phase change memory (PCRAM) is an emerging semiconductor memory following static random access memory (SRAM), dynamic random access memory (DRAM), flash memory (FLASH), etc., which utilizes chalcogenides in crystalline and amorphous states The huge conductivity difference between them is used to store data. After the power is cut off, the information stored on it will not be lost, and it is a non-volatile memory. PCRAM has the advantages of fast phase transition speed, low power consumption, long lifespan and excellent miniaturization performance. It is considered to be the most likely to replace the current SRAM, DRAM and FLASH and become the mainstream product of future memory. Among them, the germanium-containing compoun...

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Problems solved by technology

However, obtaining molten ionic liquids usually requires a high reaction temperature and electrochemical equipment such as an electrolytic cell that can adapt to a high temperature environment, and the preparation cost is high and the process is difficult.

Although some scholars have found a method to obtain germanium thin films from ionic liquids at room temperature (Frank Endres. Electrodeposition of a thin germanium film on gold from a room temperature ionic liquid. Physical Chemistry Chemical Physics, 2001, 3, 3165-3174), However, the ionic solution system 1-butyl-3-methylimidazolium hexafluorophosphate (BMIPF6) it uses is very complicated, and the electrochemical device that needs to be used is also relatively special. The method of using electrochemical deposition of germanium is lower, and there is no report on the electrodeposition of GST ternary phase change material films in related ionic liquids.

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