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Zirconium diboride/silicon carbide composite material and method for preparing same by means of arc melting in-suit reaction

A technology of zirconium diboride and composite materials, which is applied in the field of ceramic materials, can solve the problems of difficulty in preparing dense zirconium diboride/silicon carbide composite materials, adverse effects on the performance of composite materials, and difficulty in the diffusion process. Controllable microstructure, good industrialization prospects, and the effect of increasing material density and crack growth resistance

Inactive Publication Date: 2012-08-15
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, studies have shown that the preparation of zirconium diboride / silicon carbide composites by solid-state sintering has the following limitations: 1. Due to the 2 And SiC has a strong covalent bond, the diffusion process in traditional sintering is difficult to carry out, and it is difficult to prepare dense and high-strength zirconium diboride / silicon carbide composite materials; Sintering aids (such as: CoB, Ni 3 B 4 , Y 2 o 3 , ZrO 2 etc.), which will adversely affect the performance of the composite material; three, the traditional method has relatively strict requirements on the raw materials and the process, which makes the preparation process complicated and inefficient, and increases the cost of the preparation material; therefore, the choice of efficient and cheap Preparation of high-performance high-temperature ceramic materials is an important way to solve the bottleneck restricting their large-scale application

Method used

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  • Zirconium diboride/silicon carbide composite material and method for preparing same by means of arc melting in-suit reaction
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  • Zirconium diboride/silicon carbide composite material and method for preparing same by means of arc melting in-suit reaction

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] According to the formula Zr:B 4 The mass ratio of C is 72:28, and the ingredients are weighed, that is, the molar ratio is 1.56:1, and Zr and B are added. 4 The mass fraction of C powder mass is 30% SiC (equivalent to B 4 C:SiC molar ratio is 1:1.5), put in the mortar and grind for 15 minutes, then add 3wt% water glass solution (the volume ratio of water glass and water is 1:1) as binding agent, mix with graphite mold The powder is pressed on the surface of the graphite matrix, and the sample is placed in the room temperature environment to dry in the shade for 24 hours, then heated to 450°C in a drying oven at a heating rate of 2°C / s and stayed for 1 hour, and the dried sample is placed in The cathode is rapidly melted with an electric arc, and the entire arc is under the protection of flowing argon, under the condition of 250A direct current, 35V voltage, 10L / min protective gas flow rate and an arc scanning speed of 1.67mm / s. Finally, a zirconium diboride / silicon ca...

Embodiment 2

[0024] According to the formula Zr:B 4 The mass ratio of C is 72:28, and the ingredients are weighed, that is, the molar ratio is 1.56:1, and Zr and B are added. 4 The mass fraction of C powder mass is 30% SiC (equivalent to B 4 C:SiC molar ratio is 1:1.5), put in the mortar and grind for 15 minutes, then add 5wt% water glass solution (the volume ratio of water glass and water is 1:1) as binding agent, use graphite mold to mix The powder is pressed and the surface of the graphite substrate is placed, and the sample is placed at room temperature and dried in the shade for 12 hours, then heated to 350°C in a drying oven at a heating rate of 2°C / s and stayed for 0.5 hours, and the dried sample is placed in a The cathode is rapidly melted with an electric arc, and the entire arc is under the protection of flowing argon gas. It is completed under 200A DC, 30V voltage, 10L / min shielding gas flow rate and 1.67mm / s arc scanning speed. Finally, the length, width and thickness are 50mm...

Embodiment 3

[0026] The difference from Example 1 is that it is completed at an arc scanning speed of 2.5mm / s, and a zirconium diboride / silicon carbide composite block material is finally prepared.

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PUM

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Abstract

The invention discloses a zirconium diboride / silicon carbide composite material and a method for preparing the same by means of an arc melting in-suit reaction. Raw materials for reaction comprise zirconium powder, carbon boride powder and silicon carbide powder; the dried mixed powder is melted by electric arcs under the protection of argon so that the mixed powder reacts; and then the target material can be formed through solidification and crystallization. The zirconium diboride / silicon carbide composite material prepared by the arc melting in-suit reaction method has a microhardness of 24.0+ / -0.8 GPa and a breaking tenacity of 6.7+ / -0.7 MPa m<1 / 2>; the obdurability of the composite material is obviously higher than that of the zirconium diboride / silicon carbide composite materials prepared by other methods. Furthermore, the melting solidification preparation method employed in the invention is capable of solving the problems of high requirements for initial materials, complex preparation method, low material density and mechanical performance, high cost and the like in the preparation of the ZrB2-based composite material through solid-state sintering.

Description

technical field [0001] The invention relates to the technical field of ceramic materials, and more specifically relates to a high-performance zirconium diboride / silicon carbide composite material and a preparation method thereof. Background technique [0002] Zirconium diboride (ZrB 2 ) is a metalloid structure compound with a hexagonal C32 structure. Because of its high melting point, high hardness, good electrical and thermal conductivity, and good neutron control ability, it is used in high-temperature structural ceramic materials, composite materials, refractory materials, It has been paid attention to and widely used in the fields of electrode materials and nuclear control materials. Many reports have shown that the addition of SiC can improve the oxidation resistance of materials and enhance their mechanical properties. Therefore, people have done a lot of research on the mechanical properties and high temperature properties of zirconium diboride / silicon carbide comp...

Claims

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Application Information

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IPC IPC(8): C04B35/58C04B35/653
Inventor 王惜宝任哲
Owner TIANJIN UNIV
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