Method for preparing mesoporous beta-Ga2O3 nanorod photocatalyst by using PEG (polyethylene glycol) as template

A photocatalyst, -ga2o3 technology, applied in chemical instruments and methods, catalyst activation/preparation, physical/chemical process catalysts, etc., can solve problems affecting photocatalytic performance and application, irregular structure, large grain size, etc. Achieving good application prospects, low cost and good degradation effect

Inactive Publication Date: 2012-09-19
ZHEJIANG UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The patent publication number is: CN101993110A, and the patent name is: A microwave method for preparing β-Ga 2 o 3 method, published a microwave digestion furnace for microwave hydrothermal reaction to form white crystalline flocculent β-Ga 2 o 3 The method has the advantages of simple equipment structure, reliable process principle, short preparation time, high efficiency and easy operation; but the prepared β-Ga 2 o 3 Large grain size, irregular structure, and small specific surface area seriously affect the β-Ga 2 o 3 photocatalytic properties and applications

Method used

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  • Method for preparing mesoporous beta-Ga2O3 nanorod photocatalyst by using PEG (polyethylene glycol) as template
  • Method for preparing mesoporous beta-Ga2O3 nanorod photocatalyst by using PEG (polyethylene glycol) as template
  • Method for preparing mesoporous beta-Ga2O3 nanorod photocatalyst by using PEG (polyethylene glycol) as template

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] (1) Weigh 1.6g of gallium nitrate and 1.7g of sodium hydroxide into a 100mL autoclave, then add 5mL of PEG200 and 35mL of deionized water, stir at room temperature for 1 hour until completely dissolved, then hydrothermally react at 100°C 6 hours.

[0031] (2) After cooling, separate by suction filtration, wash with deionized water for 3 times, then wash with absolute ethanol for 4 times, dry at 100°C for 1 hour, and grind to obtain white powder GaOOH.

[0032] (3) Transfer the above GaOOH to a muffle furnace and calcine at 500°C for 1 hour to obtain uniform and stable mesoporous β-Ga 2 o 3 Nanorod photocatalysts.

[0033] After XRD characterization, the precursor GaOOH obtained after hydrothermal treatment is orthorhombic (JCPDS: 06-0180), and the β-GaOOH obtained after calcination 2 o 3 It is monoclinic (JCPDS: 41-1103), see figure 2 . After BET characterization, the prepared β-Ga 2 o 3 The average pore size is 17.30nm, which belongs to mesoporous material, se...

Embodiment 2

[0035] (1) Weigh 1.6g of gallium nitrate and 2.64g of urea into a 100mL autoclave, then add 20mL of PEG200 and 45mL of deionized water, stir at room temperature for 2 hours until completely dissolved, and conduct a hydrothermal reaction at 140°C for 6 hours.

[0036] (2) After cooling, separate by suction filtration, wash with deionized water for 4 times, then wash with absolute ethanol for 5 times, dry at 200°C for 2 hours, and grind to obtain white powder GaOOH.

[0037] (3) Transfer the above GaOOH to a muffle furnace and calcinate at 800°C for 2 hours to obtain uniform and stable mesoporous β-Ga 2 o 3 Nanorod photocatalysts.

[0038] Characterized by TEM and SEM, the prepared β-Ga 2 o 3 It is a rod-like structure with an average diameter of 200nm and a length distribution of 1.00~1.05μm. There are many nanoscale pores on the surface of the catalyst, see Figure 5 with Image 6 ; Prepared β-Ga 2 o 3 The specific surface area of ​​the nanorods is 29.00m 2 / g, with an a...

Embodiment 3

[0040] (1) Weigh 0.71g of gallium chloride and 2.64g of urea into a 100mL autoclave, then add 20mL of PEG1000 and 45mL of deionized water, stir at room temperature for 3 hours until completely dissolved, and then hydrothermally react at 200°C for 12 hours .

[0041] (2) After cooling, separate by suction filtration, wash 5 times with deionized water, then wash 3 times with absolute ethanol, dry at 150°C for 3 hours, and grind to obtain white powder GaOOH.

[0042] (3) Transfer the above GaOOH to a muffle furnace and calcine at 800°C for 5 hours to obtain uniform and stable mesoporous β-Ga 2 o 3 Nano stave.

[0043] The prepared β-Ga 2 o 3 The specific surface area of ​​the nanorods is 20.62 m 2 / g, the length distribution is 1.00~1.10μm, the average diameter is 260nm, and the average pore diameter is 50nm, which belongs to mesoporous material.

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Abstract

The invention belongs to the technical field of photocatalyst materials and preparation thereof, and aims to provide a method for preparing a mesoporous beta-Ga2O3 nanorod photocatalyst by using PEG (polyethylene glycol) as a template. According to the method, gallium-containing compounds and alkaline matters are used as raw materials, the PEG is used as the template, and a hydrothermal synthesis method is adopted to prepare the mesoporous beta-Ga2O3 nanorod photocatalyst. The invention can effectively control the crystal growth, improve the crystal form structure of the catalyst, increase the specific area of the catalyst, generate abundant oxygen vacancies or gallium-oxygen vacancy pairs, and enhance the photoresponse intensity of the catalyst, thereby enhancing the photocatalytic efficiency of the catalyst. The experiment of decomposing methylbenzene by photocatalytic oxidation indicates that the photocatalytic efficiency of the PEG-modified beta-Ga2O3 is 1.2-10 times of that of the beta-Ga2O3 which is not modified by the PEG. The method has the advantages of simple technique and adjustable parameters, and is easy to operate; and the prepared beta-Ga2O3 nanorod photocatalyst is a monoclinic system with complete and regular crystal form, belongs to a mesoporous material, and has the advantages of high photoresponse capacity and high catalytic performance.

Description

technical field [0001] The invention relates to a method for preparing mesoporous β-Ga by using PEG as a template 2 o 3 The invention relates to a nanorod photocatalyst method, which belongs to the technical field of photocatalytic materials and their preparation. Background technique [0002] Ga 2 o 3 It is a transparent wide bandgap metal oxide semiconductor material with excellent chemical stability, thermal stability, electrical conductivity, and luminescent properties. The optical bandgap width at room temperature is between 4.2 and 4.9eV. Currently reported Ga 2 o 3 There are α-, β-, γ-, δ- and ε-Ga 2 o 3 And so on 5 different forms. At room temperature, with monoclinic β-Ga 2 o 3 It is the most stable and has broad application prospects in optoelectronic devices. It can be widely used in insulating layers of Ga and semiconductors, ultraviolet luminescent materials and gas sensors. In addition, β-Ga 2 o 3 As an efficient photocatalytic material, it has show...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J23/08B01J37/10C01G15/00C30B7/10C30B29/16C30B29/62
Inventor 赵伟荣张静王琰
Owner ZHEJIANG UNIV
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