Method for preparing Mn-Zn oxide electrogenerated resistive thin films and asymmetric light-pervious resistive capacitors thereof

An oxide film, resistive film technology, applied in photosensitive equipment, solid-state chemical plating, coating, etc., can solve the problems of complex storage unit structure and manufacturing process, data retention ability to be improved, and slow access speed, etc. Achieve the effects of low cost, reduced internal stress, low set voltage and reset voltage

Inactive Publication Date: 2013-04-03
GUILIN UNIV OF ELECTRONIC TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

MRAM uses the change of the tunnel junction polarization direction to store data, but the access speed is slow; FRAM uses the polarization characteristics of ferroelectrics to store data, and the storage and reading speed is fast, but the

Method used

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  • Method for preparing Mn-Zn oxide electrogenerated resistive thin films and asymmetric light-pervious resistive capacitors thereof
  • Method for preparing Mn-Zn oxide electrogenerated resistive thin films and asymmetric light-pervious resistive capacitors thereof
  • Method for preparing Mn-Zn oxide electrogenerated resistive thin films and asymmetric light-pervious resistive capacitors thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0058] (1) Use the glass coated with ITO transparent conductive film as the substrate, and perform surface treatment and cleaning on the glass substrate:

[0059] ① Soak in sodium hydroxide solution for 24 hours to remove the remaining attachments on the surface;

[0060] ② Ultrasonic cleaning with acetone for 10-15 minutes to remove organic matter on the substrate surface;

[0061] ③ Ultrasonic cleaning with ethanol for 8-15 minutes to remove hydrocarbons on the glass surface;

[0062] ④ Finally, ultrasonic cleaning with deionized water for 10 minutes to remove residual ethanol.

[0063] (2) Use the following raw materials (the purity of which is 99.99% of analytical purity) to prepare ZnMnO 3 Precursor solution:

[0064] Zinc acetate (Zn(CH 3 COO) 2 2H 2 O) 87.80 grams

[0065] Manganese acetate tetrahydrate (Mn(CH 3 COO) 2 4H 2 O) 101.96 grams

[0066] Ethanolamine 21.35ml

[0067] Ethylene glycol methyl ether 1000ml

[0068] Among them: (a) solute manganese ac...

Embodiment 2

[0082] (1) Use the glass coated with ITO transparent conductive film as the substrate, and perform surface treatment and cleaning on the glass substrate:

[0083] ① Soak in sodium hydroxide solution for 24 hours to remove the remaining attachments on the surface;

[0084] ② Ultrasonic cleaning with acetone for 10-15 minutes to remove organic matter on the substrate surface;

[0085] ③ Ultrasonic cleaning with ethanol for 8-15 minutes to remove hydrocarbons on the glass surface;

[0086] ④ Finally, ultrasonic cleaning with deionized water for 10 minutes to remove residual ethanol.

[0087] (2) Use the following raw materials (the purity of which is 99.99% of analytical purity) to prepare ZnMn 2 o 4 Precursor solution:

[0088] Zinc acetate (Zn(CH 3 COO) 2 2H 2 O) 87.80 grams

[0089] Manganese acetate tetrahydrate (Mn(CH 3 COO) 2 4H 2 O) 201.95 grams

[0090] Ethanolamine 21.35ml

[0091] Ethylene glycol methyl ether 1000ml

[0092] Among them: (a) solute manganes...

Embodiment 3

[0101] (1) Use the glass coated with AZO transparent conductive film as the substrate, and perform surface treatment and cleaning on the glass substrate:

[0102] ① Soak in sodium hydroxide solution for 24 hours to remove the remaining attachments on the surface;

[0103] ② Ultrasonic cleaning with acetone for 10-15 minutes to remove organic matter on the substrate surface;

[0104] ③ Ultrasonic cleaning with ethanol for 8-15 minutes to remove hydrocarbons on the glass surface;

[0105] ④ Finally, ultrasonic cleaning with deionized water for 10 minutes to remove residual ethanol.

[0106] (2) Use the following raw materials (the purity of which is 99.99% of analytical purity) to prepare ZnMnO 3 Precursor solution:

[0107] Zinc acetate (Zn(CH 3 COO) 2 2H 2 O) 65.85 grams

[0108] Manganese acetate tetrahydrate (Mn(CH 3 COO) 2 4H 2 O) 73.527 grams

[0109] Ethanolamine 28.75ml

[0110] Ethylene glycol methyl ether 1000ml

[0111] Among them: (a) solute manganese ac...

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Abstract

The invention discloses a method for preparing Mn-Zn oxide electrogenerated resistive thin films and asymmetric light-pervious resistive capacitors thereof, which comprises the following steps of: preparing an Mn-Zn oxide electrogenerated resistive thin film by taking glass plated with a transparent conductive oxide thin film as a substrate and using a CSD (chemical solution deposition) technique, and then by using a direct-current magnetron sputtering technique, preparing a metal thin film upper electrode and obtaining a corresponding asymmetric light-pervious resistive capacitor. The method disclosed by the invention has the advantages that (1) the components of the thin film are controlled accurately, and the components are adjusted (doped) easily, so that an effect of large area film making can be achieved, and the cost is low; (2) because a process scheme of multiple spin coating and layered preheating is adopted, the crystallinity can be improved, the internal stress of the thin film can be reduced, and the properties, especially higher high/low resistance ratio and lower setting voltage and reset voltage, of the thin film can be increased; and (3) the prepared thin film is a capacitor with an asymmetric structure, so that the anti-fatigue properties of the electrogenerated resistive thin film can be greatly improved, and the thin film can be applied to the field of transparent electronics.

Description

technical field [0001] The invention relates to the field of materials and devices in microelectronics and optoelectronics, in particular to a method for preparing Mn-Zn oxide (ZnMnO) on a glass substrate coated with a transparent conductive oxide film. 3 , ZnMn 2 o 4 ) The preparation method of the electroresistive variable thin film and its asymmetric light-transmitting resistive variable capacitor. As-prepared ZnMnO 3 , ZnMn 2 o 4 The electroresistive variable film and its asymmetric light-transmitting resistive variable capacitor can realize reversible resistance switching and can be applied to transparent electroresistive variable memory (RRAM). Background technique [0002] The currently widely used semiconductor dynamic random access memory (DRAM) has a high degree of integration and a fast storage speed. Its defect is volatility, that is, when the power is turned off, all stored data will be erased from the DRAM. cause data loss. [0003] As a representative o...

Claims

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Application Information

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IPC IPC(8): C23C20/08H01G9/20
Inventor 王华高书明许积文周尚菊杨玲
Owner GUILIN UNIV OF ELECTRONIC TECH
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