Method for preparing graphene strip by adopting low-temperature chemical vapour deposition

A low-temperature chemical and vapor deposition technology, applied in graphene, nanotechnology, nanocarbon, etc., can solve the difficulty of graphene production, preparation and application promotion, the high growth temperature of graphene, and the inability to accurately control the cutting size of graphene strips, etc. question

Inactive Publication Date: 2013-05-08
NORTHEASTERN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] At present, the typical methods for preparing graphene strips at home and abroad include: electron beam etching method, chemical method and epitaxial growth method, etc., but these methods have problems such as: cannot Precisely control the cutting size of graphene strips, defects and impurities

Method used

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  • Method for preparing graphene strip by adopting low-temperature chemical vapour deposition
  • Method for preparing graphene strip by adopting low-temperature chemical vapour deposition

Examples

Experimental program
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Effect test

Embodiment 1

[0029] (2) Copper foil annealing: Put the dried copper foil into the quartz tube reactor and place it in the constant temperature zone of the horizontal heating furnace. One end of the quartz tube reactor is connected with the hydrogen bottle and the container containing the liquid carbon source absolute ethanol Connected, and the other end is connected with a vacuum pump, and the quartz tube reactor is evacuated to 9 × 10 -3 Torr, pass in hydrogen with a flow rate of 5.8 sccm, and at the same time use a horizontal heating furnace to heat up at a rate of 20 ℃ / min. When heated to 950 ℃, hold for 30 minutes and anneal;

[0030] (3) Low-temperature growth of graphene strips: After annealing, the furnace temperature is controlled to 550 °C, and the flow rate of hydrogen is adjusted to 3.0 sccm at the same time, and the liquid carbon source absolute ethanol is introduced, and the negative pressure of absolute ethanol in the quartz tube reactor Enter the reactor in gaseous form, gro...

Embodiment 2

[0035] (2) Copper foil annealing: Put the dried copper foil into the quartz tube reactor and place it in the constant temperature zone of the horizontal heating furnace. One end of the quartz tube reactor is connected to the hydrogen bottle and the container containing the liquid carbon source tetrahydrofuran. The other end is connected with a vacuum pump, and the inside of the quartz tube reactor is evacuated to 10 -2 Torr, pass in hydrogen with a flow rate of 4.0 sccm, and use a horizontal heating furnace to heat up at a rate of 5 ℃ / min at the same time. When heated to 500 ℃, hold for 60 minutes and anneal;

[0036] (3) Low-temperature growth of graphene strips: After annealing, the furnace temperature is controlled to 500 °C, and the flow rate of hydrogen is adjusted to 2.4 sccm at the same time, and the liquid carbon source tetrahydrofuran is introduced, and the liquid carbon source tetrahydrofuran is under the negative pressure in the quartz tube reactor Enter the reactor...

Embodiment 3

[0040] (2) Copper foil annealing: Put the dried copper foil into the quartz tube reactor and place it in the constant temperature zone of the horizontal heating furnace. One end of the quartz tube reactor is connected to the hydrogen bottle and the container containing the liquid carbon source xylene , the other end is connected to a vacuum pump, and the quartz tube reactor is evacuated to 8×10 -3Torr, pass in hydrogen gas with a flow rate of 10.0 sccm, and simultaneously use a horizontal heating furnace to heat up at a rate of 50 °C / min. When heated to 800 °C, hold for 45 min for annealing;

[0041] (3) Low-temperature growth of graphene strips: after annealing, the furnace temperature is controlled to 580 °C, and the flow rate of hydrogen gas is adjusted to 2.8 sccm at the same time, and the liquid carbon source xylene is introduced, and the negative pressure of the liquid carbon source xylene in the quartz tube reactor Under the action, it enters the reactor in a gaseous st...

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Abstract

The invention belongs to the field of preparation of semiconductor materials and in particular relates to a method for preparing a graphene strip by adopting low-temperature chemical vapour deposition. The method provided by the invention comprises the following steps of: firstly carrying out electrolytic polishing on a copper foil, then placing the copper foil into a quartz tube reactor, annealing under the condition of hydrogen, and then adjusting flow velocity of the hydrogen to be 2.4-3.0sccm and introducing a liquid carbon source at the temperature of 500-580 DEG C, and growing a graphene strip on the copper foil while pressure is controlled to be 2.0-10.0Torr and growth time is controlled to be 10-50 minutes, so that the graphene strip growing on the copper foil is obtained. According to the method, the copper foil subjected to electrolytic polishing is adopted, so that chemical activity of the surface of the copper foil is higher; and the adopted carbon source is a carbon-containing organic solvent which has the characteristics of aromatic compounds and aliphatic compounds and the characteristics between the characteristics of the aromatic compounds and the characteristics of the aliphatic compounds, and compared with a gas carbon source commonly used in the prior art such as methane, the carbon-containing organic solvent is more beneficial to low-temperature growth of the graphene strip.

Description

technical field [0001] The invention belongs to the field of semiconductor material preparation, and in particular relates to a low-temperature chemical vapor deposition preparation method of graphene strips. Background technique [0002] Graphene is a material with a two-dimensional honeycomb structure that is tightly packed with single-layer carbon atoms. Its unique crystal structure makes single-layer graphite a representative of semiconductor materials with zero band gap. The single-layer graphene nanoribbons are due to It has quantum confinement effect and edge effect, so that the graphene strip can realize the adjustment of the band gap, and it is expected to be used to make transistor devices with high electron mobility and high switching speed. [0003] At present, the typical methods for preparing graphene strips at home and abroad include: electron beam etching, chemical methods, and epitaxial growth methods, etc., but these methods have problems such as: the inabi...

Claims

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Application Information

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IPC IPC(8): C01B31/04B82Y40/00C01B32/186
Inventor 张滨张颖刘常升
Owner NORTHEASTERN UNIV
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