Rhombus zinc oxide nanorod array and preparation method thereof

A zinc oxide nanorod and rhombus technology is applied in the field of preparation of nanomaterials, which can solve the problems of high price of metal organic chemicals and hydrides, unfavorable large-scale production, poor repeatability, etc. Benefit and social benefit, low cost effect

Inactive Publication Date: 2013-09-11
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Recently, a novel diamond-shaped zinc oxide nanorod array has attracted the attention of a large number of researchers. LuYinong et al. have prepared a diamond-shaped zinc oxide nano-array by electrochemical deposition (Chem Commun, 2010, 46, 3191 & J Phys Chem C, 2010 , 114, 15377), but the electrochemical deposition method must be a metal conductive substrate, and an electrochemical device needs to be configured in the industrial practice process, which is not conducive to large-scale production, high cost, and poor repeatability
PeiYanli et al. used metal organic chemical vapor deposition (MOCVD) to prepare diamond-shaped zinc oxide nanoarrays (Crystengcomm, 2012, 14, 8345), but the metal organic chemicals and hydrides used in this method are relatively expensive, and some The source is flammable, explosive or toxic, and has a certain degree of danger. After the reaction, it needs to be treated in a harmless manner to prevent environmental pollution, thus limiting its large-scale application.

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  • Rhombus zinc oxide nanorod array and preparation method thereof
  • Rhombus zinc oxide nanorod array and preparation method thereof
  • Rhombus zinc oxide nanorod array and preparation method thereof

Examples

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Embodiment 1

[0035] Mix and stir zinc nitrate, ammonium fluoride, hexamethylenetetramine and water with a molar ratio of 1:1:5 at room temperature to obtain a uniformly mixed solution, and transfer the solution into a stainless steel lined with polytetrafluoroethylene In the high-pressure reaction kettle, the filling degree of the reaction kettle is 50%, and the clean metal nickel substrate is placed in the solution. The hydrothermal reaction temperature is controlled at 95 ° C, and the time is 24 hours. After the reaction is completed, the substrate is taken out and carried out. Rinse and vacuum dry at 60°C to obtain a zinc oxide precursor; then heat treat the zinc oxide precursor in an argon atmosphere at a temperature of 450°C for 4 hours to obtain a diamond-shaped zinc oxide nanorod array. The morphology of the obtained product is as figure 1 low-magnification scanning electron microscope images of figure 2 As shown in the high-magnification scanning electron microscope picture of , ...

Embodiment 2

[0037]Mix and stir zinc acetate, sodium fluoride, hexamethylenetetramine and water with a molar ratio of 1:2:5 at room temperature to obtain a uniformly mixed solution, and transfer the solution into a stainless steel lined with polytetrafluoroethylene In the high-pressure reaction kettle, the filling degree of the reaction kettle is 80%, and the clean quartz substrate is placed in the solution, and the hydrothermal reaction temperature is controlled at 80°C for 12 hours. After the reaction is completed, the substrate is taken out and rinsed , vacuum-dried at 60°C to obtain a zinc oxide precursor; then heat-treated the zinc oxide precursor in an argon atmosphere at a temperature of 300°C for 4 hours to obtain a diamond-shaped zinc oxide nanorod array.

Embodiment 3

[0039] Mix and stir zinc chloride, potassium fluoride, hexamethylenetetramine and water with a molar ratio of 1:3:5 at room temperature to obtain a uniformly mixed solution, and transfer the solution into a polytetrafluoroethylene-lined In a stainless steel high-pressure reaction kettle, the filling degree of the reaction kettle is 70%, and a clean metal titanium substrate is placed in the solution. The hydrothermal reaction temperature is controlled at 90°C, and the time is 48 hours. After the reaction is completed, the substrate is taken out and Rinse and dry in vacuum at 60°C to obtain a zinc oxide precursor; then heat treat the zinc oxide precursor in a nitrogen atmosphere at a temperature of 400°C for 4 hours to obtain a diamond-shaped zinc oxide nanorod array. image 3 The X-ray diffraction (XRD) pattern of the zinc oxide nanorod array shows that all peaks correspond to pure zinc oxide and there are no miscellaneous peaks. It can be seen that the prepared nanoarray is pur...

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Abstract

The invention discloses a rhombus zinc oxide nanorod array, wherein the side length of rhombus is 100-1,000nm, the acute angle of the interior angle of the rhombus is 30-60 degrees, and the length of the array is 5-20 microns. The zinc oxide nanorod array disclosed by the invention has a large specific surface area and high electron mobility, can provide more space to facilitate the fast adsorption and desorption of gas molecules, and obviously improves the performance of the material. The invention also discloses a preparation method of the rhombus zinc oxide nanorod array. By directly combining a chemical bonding agent and zinc salt, nucleation is directly performed on a substrate in the reaction process to grow a zinc oxide nanorod array. The preparation method disclosed by the invention does not need to grow a zinc oxide seed crystal layer or add any template, and has low cost and high efficiency; and moreover, the operation is simple and controllable, the reaction temperature is low, the requirements on equipment are low, and the method is favorable for industrial popularization and has obvious economic and social benefits.

Description

technical field [0001] The invention relates to the field of preparation of nanometer materials, in particular to a diamond-shaped zinc oxide nanorod array and a preparation method thereof. Background technique [0002] Zinc oxide (ZnO) is a direct bandgap II-VI compound semiconductor material with a wide bandgap. The bandgap of ZnO can reach 3.37eV at room temperature. As one of the third-generation semiconductor materials, zinc oxide has simple preparation process, low growth temperature, low preparation cost, abundant raw materials, low price, non-toxicity and environmental compatibility. Ferroelectric and other properties in one, its novel dimensional effect makes it exhibit many unique characteristics, and has high thermal and chemical stability and is widely used in the manufacture of various devices. It is considered to be the most promising in the 21st century. one of the materials. [0003] The existing methods for preparing zinc oxide include physical evaporation...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G9/02B82Y30/00B82Y40/00
Inventor 朱丽萍文震牛文哲万尾甜许鸿斌陈文丰周梦萦张翔宇
Owner ZHEJIANG UNIV
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